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    GAN AMPLIFIER 100W Search Results

    GAN AMPLIFIER 100W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    GAN AMPLIFIER 100W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ATC800B680JT

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  


    Original     		RFG1M20090 RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS120418 ATC800B680JT PDF

    BW030

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power>90W  Advanced Heat-Sink Technology 


    Original     		RFG1M20090 RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS110620 BW030 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to


    Original     		RFG1M20090 RF400-2 44dBm -35dBc -55dBc DS120418 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >120W  Advanced Heat-Sink Technology 


    Original     		RFG1M09090 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 44dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology


    Original     		RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm PDF

    ATC100B100JT

    Abstract: ATC100B1R8BT alt110
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>120W Advanced Heat-Sink Technology


    Original     		RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm ATC100B100JT ATC100B1R8BT alt110 PDF

    GaN amplifier 100W

    Abstract: class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits
    Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9


    Original     		ZHL-100W-GAN+ ZHL-100W-GANX+ GaN amplifier 100W class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits PDF

    GaN 100 watt

    Abstract: rf amplifier 100w ZHL-100W-GANX
    Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9


    Original     		ZHL-100W-GAN+ ZHL-100W-GANX+ GaN 100 watt rf amplifier 100w ZHL-100W-GANX PDF

    Untitled

    Abstract: No abstract text available
    Text: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal •฀ •฀ •฀ •฀ •฀ High฀Eficiency,฀50%฀typ. High฀Output฀Power,฀100W GaN฀Output฀Stage High฀Output฀IP2,฀+84฀dBm฀typ. High฀Output฀IP3,฀+60฀dBm฀typ.


    Original     		ZHL-100W-GAN+ ZHL-100W-GANX+ PDF

    Untitled

    Abstract: No abstract text available
    Text: TGA2813 3.1 – 3.6GHz 100W GaN Power Amplifier Applications • Radar Product Features        Functional Block Diagram Frequency Range: 3.1 – 3.6GHz PSAT: 50.7dBm Power Gain: > 22dB PAE: 55% Bias: VD = 30V, IDQ = 150mA, VG = -3.0V Typical


    Original     		TGA2813 150mA, TGA2813 TQGaN25) PDF

    MGFC50G

    Abstract: No abstract text available
    Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2


    Original     		MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G PDF

    GaN amplifier 100W

    Abstract: ZHL-100W-GAN
    Text: High Power Amplifier ZHL-100W-GAN+ Typical Performance Data NOISE FIGURE POUT @ 1 dB COMPRESSION POUT @ 3 dB COMPRESSION OUTPUT IP2 OUTPUT IP3 OUT dB (dBm) (dBm) (dBm) (dBm) 30V 30V 30V 30V 30V 30V 1.36 1.20 9.76 48.67 49.54 78.14 61.56 VSWR (:1) FREQ. GAIN


    Original     		ZHL-100W-GAN+ GaN amplifier 100W ZHL-100W-GAN PDF

    Untitled

    Abstract: No abstract text available
    Text: Gallium Nitride MMIC 12W 7.5 – 12.0 GHz Power Amplifier AM07512041TM-SN April 2014 Preliminary DESCRIPTION AMCOM’s AM07512041TM-SN-R is a broadband GaN MMIC power amplifier. It has 20dB gain, and 41 dBm output power over the 7.5 to 12.0GHz band. The AM07512041TM-SN-R is in a ceramic package with a flange and


    Original     		AM07512041TM-SN AM07512041TM-SN-R 41dBm 1000pF, 50ohms, 10ohms, 360mA 900mA PDF

    AM206541TM-SN-R

    Abstract: amcomusa
    Text: Gallium Nitride MMIC 12W 2.0 – 6.0 GHz Power Amplifier AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOM’s AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R is in a ceramic package with a flange and straight


    Original     		AM206541TM-SN AM206541TM-SN-R 41dBm equ1000pF, 50ohms, 10ohms, 540mA 900mA Vds12pin) amcomusa PDF

    A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

    Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
    Text: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications


    Original     		PDF

    4.1 amplifier 100w

    Abstract: ZHL-100W-GAN GaN amplifier 100W
    Text: High Power Amplifier ZHL-100W-GAN+ Typical Performance Curves Directivity Gain 50 50 47 48 44 44 41 Directivity dB Gain (dB) 30V 46 30V 42 40 38 30V 38 35 32 29 36 26 34 23 32 20 30 50 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450


    Original     		ZHL-100W-GAN+ 4.1 amplifier 100w ZHL-100W-GAN GaN amplifier 100W PDF

    combiner THEORY

    Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
    Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective


    Original     		WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost


    Original     		CLF1G2535-100 50dBm CLF1G27LS-110 12us/10% PDF

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package


    Original     		MAGX-001220-100L00 PDF

    GaN amplifier 100W

    Abstract: MAGX-001220-100L00 Gan on silicon transistor
    Text: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package


    Original     		MAGX-001220-100L00 MAGX-001220-100L00 GaN amplifier 100W Gan on silicon transistor PDF

    MAGX-000035-100000

    Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
    Text: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation


    Original     		MAGX-000035-100000 MAGX-000035-100000 GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035 PDF

    NPTB0004

    Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
    Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015 PDF

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation PDF

    LK141

    Abstract: 60W VHF TV RF amplifier
    Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation


    Original     		ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier PDF