Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAN HEMT TRANSISTOR Search Results

    GAN HEMT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    GAN HEMT TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		CGHV27030S CGHV27030S CGHV27 PDF

    transistor smd 1p8

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		CGHV27030S CGHV27030S CGHV27 transistor smd 1p8 PDF

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    CMPA0060002D

    Abstract: bonding wire cree
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		CMPA0060002D CMPA0060002D CMPA00 bonding wire cree PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		CMPA0060002D CMPA0060002D CMPA00 PDF

    CGH60060D

    Abstract: hemt .s2p 5609 transistor
    Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift


    Original     		CGH60060D CGH60060D CGH6006 hemt .s2p 5609 transistor PDF

    5609 transistor

    Abstract: CGH60060D bonding wire cree
    Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift


    Original     		CGH60060D CGH60060D CGH6006 5609 transistor bonding wire cree PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		CMPA0060002D CMPA0060002D CMPA00 PDF

    CGH60008D

    Abstract: No abstract text available
    Text: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60008D CGH60008D CGH6000 PDF

    CGH60015D

    Abstract: bonding wire cree
    Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60015D CGH60015D CGH6001 bonding wire cree PDF

    CGH60008D

    Abstract: No abstract text available
    Text: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60008D CGH60008D CGH6000 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60015D CGH60015D CGH6001 PDF

    cree 3535

    Abstract: No abstract text available
    Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		CGH60030D CGH60030D CGH6003 cree 3535 PDF

    CGH60030D

    Abstract: CGH6003 cree 3535
    Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		CGH60030D CGH60030D CGH6003 cree 3535 PDF

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		CGHV1J025D CGHV1J025D 18GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		CGHV1J006D CGHV1J006D 18GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV1J025D

    Abstract: G40V4 bonding wire cree
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		CGHV1J025D CGHV1J025D 18GHz High7703 G40V4 bonding wire cree PDF

    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		CGHV1J025D CGHV1J025D 18GHz PDF

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2 PDF