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    GATE DRIVE CHARACTERISTICS Search Results

    GATE DRIVE CHARACTERISTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    LBUA5QJ2AB-828EVB Murata Manufacturing Co Ltd QORVO UWB MODULE EVALUATION KIT Visit Murata Manufacturing Co Ltd
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd

    GATE DRIVE CHARACTERISTICS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Gate Drive Characteristics International Rectifier Gate Drive Characteristics and Requirements for HEXFETs Original PDF

    GATE DRIVE CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary PDF

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A PDF

    HEXFET Power MOSFET designer manual

    Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
    Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2


    Original     		AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent PDF

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


    Original     		AN-937 ca3103 2n2222 -331 Cd4093 SiHF PDF

    Untitled

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB)


    Original     		BAP1551 LM-35 PDF

    single phase half bridge inverter

    Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control


    Original     		BAP1551 LM-35 single phase half bridge inverter IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note PDF

    Untitled

    Abstract: No abstract text available
    Text: Miniaturized Gate Drive Transformers Deliver MOSFET/IGBT gate power and timing signals simultaneously Directly drive high-side MOSFETs/IGBTs on busses up to 1200V Excellent risetime, overshoot, and peak current characteristics >8 mm minimum creepage and clearance from drive to gates


    Original     		100mA 100KHz PDF

    EE-19 n transformer

    Abstract: EE-19 transformer EE 19 transformer Power Transformer EE-19 frc 34 pin EE-25 transformer UC1727
    Text: [ I ! INTEGRATED CIRCUITS UC1727 UC2727 UC3727 UNITRODE Isolated High Side IGBT Driver FEATURES Receives Power and Signal from Single Isolation Transformer Generates Split Rail for 4A Peak Bipolar Gate Drive 16V High Level Gate Drive Low Level Gate Drive more Negative


    OCR Scan     		UC1727 UC2727 UC3727 UC1727 UC1726, EE-19 n transformer EE-19 transformer EE 19 transformer Power Transformer EE-19 frc 34 pin EE-25 transformer PDF

    APT9302

    Abstract: mosfet discrete totem pole drive CIRCUIT mosfet discrete totem pole CIRCUIT mosfet power totem pole CIRCUIT APT50M60JN APT5020BN MIC4429 MIC4451 UC3708 UC3710
    Text: APPLICATION NOTE APT9302 By: Kenneth Dierberger GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Presented at PCIM '93 USA Presents design rules for proper design and layout of gate drive circuitry. 1 APT9302 GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Kenneth Dierberger


    Original     		APT9302 APT9302 mosfet discrete totem pole drive CIRCUIT mosfet discrete totem pole CIRCUIT mosfet power totem pole CIRCUIT APT50M60JN APT5020BN MIC4429 MIC4451 UC3708 UC3710 PDF

    FAN7393A

    Abstract: No abstract text available
    Text: FAN7393A Half-Bridge Gate Drive IC Features Description  Floating Channel for Bootstrap Operation to +600V The FAN7393A is a half-bridge gate-drive IC with shutdown and programmable dead-time control functions that can drive high-speed MOSFETs and Isolated Gate


    Original     		FAN7393A FAN7393A PDF

    IGBT gate drive board

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature:      Current sensing and heatsink temperature sensing capability


    Original     		BAP1491 AP-1491 IGBT gate drive board PDF

    single phase igbt based inverter 200 amps circuit

    Abstract: IGBT gate drive board single phase igbt based inverter 200 amps circuit board single phase IGBT based PWM inverters IGBT Gate Drive ap-1491 inverter igbt circuit diagrams in bridge LM35 application circuits 5045-04A BAP1491
    Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature: ™ ™ ™ ™ ™ Current sensing and heatsink temperature sensing capability


    Original     		BAP1491 AP-1491 single phase igbt based inverter 200 amps circuit IGBT gate drive board single phase igbt based inverter 200 amps circuit board single phase IGBT based PWM inverters IGBT Gate Drive inverter igbt circuit diagrams in bridge LM35 application circuits 5045-04A PDF

    GTO gate drive unit mitsubishi

    Abstract: ptw a20 GTO gate drive unit GTO 100 A
    Text: m N B ΠX _ GTO GU-A Series Gate Drive Units P iwerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 GTO GU-A Series Gate Drive Units Description: Powerex/Mitsubishi GTO Gate Drive Units are isolated systems


    OCR Scan     		PDF

    induction heating 2010

    Abstract: 14-SOP FAN7393A half-bridge power supply regulator FAN7393
    Text: FAN7393A Half-Bridge Gate Drive IC Features Description „ Floating Channel for Bootstrap Operation to +600V The FAN7393A is a half-bridge gate-drive IC with shutdown and programmable dead-time control functions that can drive high-speed MOSFETs and Isolated Gate


    Original     		FAN7393A FAN7393A induction heating 2010 14-SOP half-bridge power supply regulator FAN7393 PDF

    calculation of IGBT snubber

    Abstract: RCD snubber P-Channel IGBT arc welder inverter spot welder circuit diagram full bridge arc welder ARC WELDER RC VOLTAGE CLAMP snubber circuit pwm INVERTER welder RC snubber ac motor
    Text: Application Note 9020 April, 2002 IGBT Basic II By K.J Um CONTENTS Section I. Gate drive considerations 1. Introductions 2. Gate Drive Considerations 3. IGBT switching waveforms A. Analysis of turn-on transient 4. Gate drive design basics A. VGG+ a. Effect on-state


    Original     		PDF

    td3501

    Abstract: IGBT DRIVER Analog Devices TD350 gate drive pulse transformer IGBT/MOSFET Gate Drive datasheet mosfet igbt low voltage igbt desaturation driver schematic desaturation design 181 OPTOCOUPLER 3 phase inverter schematic diagram IGBT control circuit
    Text: TD350 Advanced IGBT/MOSFET Driver • ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.75A min gate drive Negative gate drive ability Input compatible with pulse transformer or optocoupler Separate sink and source outputs for easy gate drive Two steps turn-off with adjustable level


    Original     		TD350 TD350 td3501 IGBT DRIVER Analog Devices TD350 gate drive pulse transformer IGBT/MOSFET Gate Drive datasheet mosfet igbt low voltage igbt desaturation driver schematic desaturation design 181 OPTOCOUPLER 3 phase inverter schematic diagram IGBT control circuit PDF

    EE 19 transformer

    Abstract: EE - 19 TRANSFORMER EE 28 transformer EE-19 n transformer UC1727
    Text: UC1727 UC2727 UC3727 U IM IT R O D E Isolated High Side IGBT Driver FEATURES Receives Power and Signal from Single Isolation Transformer Generates Split Rail for 4A Peak Bipolar Gate Drive 16V High Level Gate Drive Low Level Gate Drive more Negative than -5V


    OCR Scan     		UC1727 UC2727 UC3727 UC1726, compone27 EE 19 transformer EE - 19 TRANSFORMER EE 28 transformer EE-19 n transformer PDF

    TD350I

    Abstract: optocoupler 12v 500ma igbt desaturation driver schematic TD350 12v and 500ma transformer vh50 TD350 SCHEMATIC
    Text: TD350 ADVANCED IGBT/MOSFET DRIVER ADVANCE DATA • 0.75A MIN GATE DRIVE ■ NEGATIVE GATE DRIVE ABILITY ■ INPUT COMPATIBLE WITH PULSE TRANSFORMER OR OPTOCOUPLER ■ SEPARATE SINK AND SOURCE OUTPUTS FOR EASY GATE DRIVE ■ TWO STEPS TURN-ON AND TURN-OFF WITH ADJUSTABLE LEVEL AND DELAY


    Original     		TD350 TD350 TD350I TD350I optocoupler 12v 500ma igbt desaturation driver schematic 12v and 500ma transformer vh50 TD350 SCHEMATIC PDF

    309KC

    Abstract: EE 28 transformer UC1727
    Text: application H U IM IT R O O E 1 INFO • available j UC1727 UC2727 UC3727 Isolated High Side IGBT Driver FEATURES Receives Power and Signal from Single Isolation Transformer Generates Split Rail for 4A Peak Bipolar Gate Drive 16V High Level Gate Drive Low Level Gate Drive more Negative


    OCR Scan     		UC1727 UC2727 UC3727 UC1726, 309KC EE 28 transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: Micro Gate Drive Transformers • Deliver MOSFET / IGBT gate power and timing signals simultaneously · Directly drive high-side MOSFETs / IGBTs on busses up to 200V · Excellent risetime, overshoot, and peak current characteristics Model Selection Table HiRel P/N


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0300 Rev.3.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package MPAK


    Original     		RQJ0304DQDQA R07DS0296EJ0300 PLSP0003ZB-A PDF

    RQK2501YGDQA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0400 Rev.4.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current • High speed switching


    Original     		RQK2501YGDQA R07DS0312EJ0400 PLSP0003ZB-A RQK2501YGDQA PDF

    Transformer Vitec

    Abstract: P5101-1
    Text: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Designed for operating frequency in excess of 200KHz. Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0.


    Original     		200KHz. UL94V-0. E107307. 56P3385 56P3386 56P3387 56P3388 P-510 Transformer Vitec P5101-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 Previous: REJ03G1521-0200 Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current


    Original     		RQK2501YGDQA R07DS0312EJ0300 REJ03G1521-0200) PLSP0003ZB-A PDF