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    Vishay Semiconductors VS-GB100TS60NPBF

    IGBT MOD 600V 108A INT-A-PAK
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    Vishay Siliconix VS-GB100TS60NPBF

    VS-GB100TS60NPBF, INT-A-PAK Series IGBT Module, 108 A max, 600 V, Surface Mount | Siliconix / Vishay VS-GB100TS60NPBF
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    GB100TS60NPBF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    diode BY 127

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC 11-Mar-11 diode BY 127 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized speed 8 to 60 kHz for hard RoHS switching COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original     		GB100TS60NPbF 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original     		GB100TS60NPbF 18-Jul-08 PDF

    GB100TS60NPbF

    Abstract: GB100TS
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC 18-Jul-08 GB100TS60NPbF GB100TS PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on)


    Original     		GB100TS60NPbF 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 100 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient


    Original     		GB100TS60NPbF 12-Mar-07 PDF