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Vishay Semiconductors VS-GB75SA120UP IGBT MODULE 1200V 658W SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-GB75SA120UP	Bulk			180	1 - 10 - 100 - 1000 $46.073 10000 $46.073	Buy Now

GB75SA120UP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VS-GB75SA120UP Abstract: No abstract text available Text: Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C	Original	PDF	VS-GB90SA120U VS-GB75SA120UP OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB75SA120UP
GB75SA120UP Abstract: No abstract text available Text: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package	Original	PDF	GB75SA120UP 2002/95/EC OT-227 OT-227 11-Mar-11 GB75SA120UP
GB75SA120UP Abstract: No abstract text available Text: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package	Original	PDF	GB75SA120UP 2002/95/EC OT-227 OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GB75SA120UP
ultrafast igbt Abstract: GB75SA120UP igbt for induction heating ic c5027 induction heating technical information Text: GB75SA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz	Original	PDF	GB75SA120UP OT-227 2002/95/EC OT-227 18-Jul-08 ultrafast igbt GB75SA120UP igbt for induction heating ic c5027 induction heating technical information
GB75SA120UP Abstract: No abstract text available Text: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package	Original	PDF	GB75SA120UP OT-227 2002/95/EC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GB75SA120UP
GB75SA120UP Abstract: No abstract text available Text: GB75SA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz	Original	PDF	GB75SA120UP 2002/95/EC OT-227 OT-227 11-Mar-11 GB75SA120UP
VS-GB75SA120UP Abstract: No abstract text available Text: Not recommended for new design, use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C	Original	PDF	VS-GB90SA120U VS-GB75SA120UP OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB75SA120UP