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ISOWATT221 Abstract: stp4n80xi stp4n80 Text: SGS-THOMSON STP4N80XI 1ILD N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RDS on V dss STP4N 80XI 8 00 V ¡ i 3 .5 £2 Id 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW INPUT CAPACITANCE . LOW GATE CHARGE	OCR Scan	STP4N80XI ISOWATT221 THOMSON-----------------------709 0C2075C» GC20760 ISOWATT221 stp4n80xi stp4n80	PDF

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ISOWATT221

Abstract: stp4n80xi stp4n80
Text: SGS-THOMSON STP4N80XI 1ILD N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RDS on V dss STP4N 80XI 8 00 V ¡ i 3 .5 £2 Id 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW INPUT CAPACITANCE . LOW GATE CHARGE

OCR Scan

STP4N80XI ISOWATT221 THOMSON-----------------------709 0C2075C» GC20760 ISOWATT221 stp4n80xi stp4n80

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