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    ISOWATT221

    Abstract: stp3n80xi
    Text: £ fj SGS-THOMSON STP3N80XI i!Ll ir^©D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP3N 80XI 4.5 a 800 V 1 .7 A . . . . . • AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE


    OCR Scan     		STP3N80XI ISOWATT221 GC3425D ISOWATT221 stp3n80xi PDF