W25R128FV
Abstract: W25Q128JV W25R128F W25Q128FV W25Q128F USON-8 W25Q80DL W978H6KB W25Q80BVSSIG
Text: 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond Electronics Corporation is a worldwide leading supplier of specialty memory IC’s. The company provides memory solution backed by the expert capabilities of design, manufacturing
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K4W2G1646E-BC11
Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W2G1646E
96FBGA
K4W2G1646E-BC11
K4W2G1646E-BC1A
k4w2g1646
K4W2G1646E
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K4W1G1646E
Abstract: K4W1G1646E-HC11
Text: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W1G1646E
K4W1G1646E
K4W1G1646E-HC11
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MT41J256M16HA
Abstract: MT41J256M16 MT41J256M16HA-093 MT41J256M16H MT41J256M16HA-093G d9pzm
Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16
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MT41J256M16
09005aef84c564b5
MT41J256M16HA
MT41J256M16
MT41J256M16HA-093
MT41J256M16H
MT41J256M16HA-093G
d9pzm
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k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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K4W1G1646G-BC11
Abstract: K4W1G1646G-BC12 470 AP 02
Text: Rev. 1.0, Nov. 2010 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W1G1646G
K4W1G1646G-BC11
K4W1G1646G-BC12
470 AP 02
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K4W1G1646G-BC11
Abstract: gDDR3-1333 K4W1G1646G-BC1A
Text: Rev. 1.1, Jan. 2011 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W1G1646G
K4W1G1646G-BC11
gDDR3-1333
K4W1G1646G-BC1A
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pcie Designs guide
Abstract: VCQFX3700-PCIE-PB dvi dual link displayport VCQ290NVS-PCIEX1-PB VCQ290NVS-PCIEX16-PB VCQ420NVS-X16-DP-PB VCQFX3800-PCIE-PB gddr3 nvidia quadro fx FX3700
Text: NVIDIA Quadro® FX 380 Low Profile by PNY Technologies® Big Performance on a Small Budget Designed for desktop and small form factor systems, the NVIDIA Quadro FX 380 LP by PNY professional graphics board meets stringent performance and reliability requirements, is ideal for 2D professional business applications
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GDDR32
512MB
256MB
DMS-59
pcie Designs guide
VCQFX3700-PCIE-PB
dvi dual link displayport
VCQ290NVS-PCIEX1-PB
VCQ290NVS-PCIEX16-PB
VCQ420NVS-X16-DP-PB
VCQFX3800-PCIE-PB
gddr3
nvidia quadro fx
FX3700
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MT41J256M16
Abstract: MT41J256M16HA MT41J256M16HA-093 MT41J256M16HA-093G MT41J256M16H d9pzm
Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. E • Timing – cycle time
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MT41J256M16
64mBox
09005aef84c564b5
MT41J256M16
MT41J256M16HA
MT41J256M16HA-093
MT41J256M16HA-093G
MT41J256M16H
d9pzm
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K4W1G1646E-HC12
Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
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K4W1G1646E
K4W1G1646E-HC12
K4W1G1646E
samsung K4W1G1646E-HC11
K4W1G1646E-HC11
gddr3
1066MB
gDDR3-1333
K4W1G1646E-HC1A
DDR3 DIMM 240 pinout
gDDR3-2000
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d9pr
Abstract: MT41J128M16JT
Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • Multipurpose register • Output driver calibration • VDD = V DDQ = +1.5V 1.425–1.575V • VDD = V DDQ = +1.35V (1.283–1.45V) capable at down
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MT41J128M16
09005aef84255871
d9pr
MT41J128M16JT
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MT41J128M16HA
Abstract: MT41J128M16JT MT41J128M16JT-125 MT41J128M16JT-107G D9PRS MT41J128M16HA-125g SMD MARKING code A6 MT41J128M16HA-107G MT41J128M16JT-093G MARKING CCK -SDRAM
Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16
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MT41J128M16
09005aef84255871
MT41J128M16HA
MT41J128M16JT
MT41J128M16JT-125
MT41J128M16JT-107G
D9PRS
MT41J128M16HA-125g
SMD MARKING code A6
MT41J128M16HA-107G
MT41J128M16JT-093G
MARKING CCK -SDRAM
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D9PRS
Abstract: MT41J128M16JT-125 MICRON gddr3 mt41j128m16ha MT41J128M16JT gddr3 GDDR3-1800 MT41J128M16HA-125 MT41J128M16HA-107G MT41J128M16JT-107G
Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. D – 96-ball (8mm x 14mm) Rev. K
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MT41J128M16
64mBox
09005aef84255871
D9PRS
MT41J128M16JT-125
MICRON gddr3
mt41j128m16ha
MT41J128M16JT
gddr3
GDDR3-1800
MT41J128M16HA-125
MT41J128M16HA-107G
MT41J128M16JT-107G
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FBGA DDR3 x32
Abstract: GDDR3 SDRAM 256Mb 144FBGA 144-FBGA gddr3 DDR266 DDR2-667 DDR2-800 DDR3-1333 DDR333
Text: Jun.2010 Consumer DRAM Code Information Component K4XXXXXXXX - XXXXXXX 1 2 1. Memory K 2. DRAM : 4 3. Small Classification S : SDRAM H : DDR SDRAM T : DDR2 SDRAM B : DDR3 SDRAM D : GDDR J : GDDR3 4~5. Density & Refresh 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms
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4K/64ms
128Mb,
256Mb,
8K/64ms
512Mb,
667MHz
DDR3-1600
FBGA DDR3 x32
GDDR3 SDRAM 256Mb
144FBGA
144-FBGA
gddr3
DDR266
DDR2-667
DDR2-800
DDR3-1333
DDR333
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gDDR3-1800
Abstract: MT41J128M16HA-125 gddr3
Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16
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MT41J128M16
09005aef84255871
gDDR3-1800
MT41J128M16HA-125
gddr3
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MT41J256M16
Abstract: MT41J128M16HA-125 MT41J128M16HA MT41J128M16HA-125g ddr3 4gb
Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • • • • • • • • • • • • • • Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16
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MT41J256M16
09005aef84c564b5
MT41J256M16
MT41J128M16HA-125
MT41J128M16HA
MT41J128M16HA-125g
ddr3 4gb
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K4W1G1646E
Abstract: samsung K4W1G1646E-HC11
Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
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K4W1G1646E
K4W1G1646E
samsung K4W1G1646E-HC11
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K4W2G1646B-HC12
Abstract: K4W2G1646B k4w2g1646 al 1411 K4W2G1646B-HC K4W2G1646B-HC15
Text: Rev. 1.22, Apr. 2010 K4W2G1646B 2Gb B-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W2G1646B
K4W2G1646B-HC12
K4W2G1646B
k4w2g1646
al 1411
K4W2G1646B-HC
K4W2G1646B-HC15
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K4W2G1646C
Abstract: No abstract text available
Text: Rev. 1.1, Sep. 2010 K4W2G1646C 2Gb gDDR3 SDRAM C-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W2G1646C
96FBGA
K4W2G1646C
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d9pzm
Abstract: MT41J256M16
Text: 4Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J256M16 – 32 Meg x 16 x 8 Banks Features • • • • • • VDD = V DDQ = +1.5V 1.425–1.575V • VDD = V DDQ = +1.35V (1.283–1.45V) capable at down clocked speeds
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MT41J256M16
09005aef84c564b5
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MT41J256M16
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