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    GE MARKING SOT Search Results

    GE MARKING SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    GE MARKING SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBD701 Schottky Barrier Diodes SOT-23 Features — Surface mount package ideally suited for automatic insertion. Applications — Sourced from process GE. Dimensions in inches and millimeters Ordering Information Type No. Marking MMBD701 5HF Package Code


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    PDF MMBD701 OT-23 MMBD701

    marking A1 SOT89

    Abstract: C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89
    Text: BAW79A.BAW79D Silicon Switching Diodes 1  Switching applications 2  High breakdown voltage 3  Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89


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    PDF BAW79A. BAW79D VPS05162 EHA07003 BAW79A BAW79B BAW79C marking A1 SOT89 C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89

    GKD transistor

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)


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    PDF CHDTC115GKPT tp300uS; 100MHz GKD transistor

    CHDTC115GKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)


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    PDF CHDTC115GKGP 300uS; 100MHz CHDTC115GKGP

    79a diode

    Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
    Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2


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    PDF VPS05162 EHA07003 OT-89 EHB00098 EHB00099 EHB00100 EHB00101 79a diode marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89

    BAW 79 W

    Abstract: A771 diode GG 79 transistor a781 Q62702-A733 Q62702-A771 Q62702-A781 Q62702-A782
    Text: Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching ● High breakdown voltage ● Common cathode ● Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733


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    PDF Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 OT-89 BAW 79 W A771 diode GG 79 transistor a781 Q62702-A733 Q62702-A771 Q62702-A781 Q62702-A782

    201 zener diode sot23

    Abstract: BZX84 Vishay
    Text: BZX84 Series VISHAY Vishay Semiconductors Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23


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    PDF BZX84 OD-123 BZT52 OT-23 D-74025 10-Jul-03 201 zener diode sot23 BZX84 Vishay

    UL46

    Abstract: JESD97 SMP75-8 USBLC6-4
    Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data lines protection Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant ■ Benefits ■ ■ ■ ■ ■ ■ Very low capacitance between lines to GND for optimized data integrity and speed


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    PDF OT23-6L UL46 JESD97 SMP75-8 USBLC6-4

    UL46

    Abstract: marking UL46 552p
    Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ Very low capacitance between lines to GND for optimized data integrity and speed


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    PDF OT23-6L OT23-6L UL46 marking UL46 552p

    UL46

    Abstract: No abstract text available
    Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ ■ Very low capacitance between lines to GND for


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    PDF OT23-6L OT23-6L UL46

    Untitled

    Abstract: No abstract text available
    Text: PJSOT03~PJSOT36 STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 ~ 36 Volts 500 Watts POWER • 500 Watts Peak Pulse Power per Line tp=8/20 s • Low Clamping Voltage • Available for working Voltage Ranging from 3V and 36V MECHANICAL DATA • Case: SOT-23 • Terminals : Solderable per MIL-STD-750,Method 2026


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    PDF PJSOT03 PJSOT36 OT-23 MIL-STD-750 PJSOT03 PJSOT05 PJSOT08 PJSOT12 PJSOT15 PJSOT24

    GE SOT-223 MARKING

    Abstract: No abstract text available
    Text: Bulletin PD-20478 rev. E 04/02 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ045 Units IF AV Rectangular 2.0 A VRRM 45 V IFSM @ tp = 5 µs sine 390 A VF 0.50 V waveform TJ @ 1 Apk, TJ = 125°C


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    PDF PD-20478 20CJQ045 OT-223 20CJQ045 EIA-418-1. GE SOT-223 MARKING

    anode common

    Abstract: 20CJQ045 EIA-541 IRFP460
    Text: Bulletin PD-20478 rev. D 06/01 20CJQ045 2 Amp SCHOTTKY RECTIFIER SOT-223 Major Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units IF AV Rectangular 2.0 A VRRM 45 V IFSM @ tp = 5 µs sine 390 A VF @ 1 Apk, TJ = 125°C 0.50 V TJ


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    PDF PD-20478 20CJQ045 OT-223 20CJQ045 EIA-418-1. anode common EIA-541 IRFP460

    diode marking gg 2a

    Abstract: BAW79C 79AB
    Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF


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    PDF Q62702-A679 Q62702-A680 Q62702-A681 Q62702-A682 Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 diode marking gg 2a BAW79C 79AB

    RTO BH

    Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
    Text: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at


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    PDF OT-23) RTO BH NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369

    Silicon N-Channel Junction FET sot23

    Abstract: lcr tuner
    Text: KSK211 SILICON N-CHANNEL JUNCTION F ET FM TUNER VHF AMPLIFIER SOT-23 . NF =25dB TYP • I Y fs I -9 .0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (TA-25TC ) C haracteristic Sym bol Gate-Drain Voltage Qate-Current Power Dissipation Junction Temperature Storage Temperature


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    PDF KSK211 OT-23 TA-25TC Silicon N-Channel Junction FET sot23 lcr tuner

    SO3572R

    Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
    Text: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo


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    PDF CB-166 OT-23) BFW30 1000m SO3572R transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl

    Toko inductor

    Abstract: No abstract text available
    Text: RÜTOKO TK11812 DC-DC CONVERTER FEATURES APPLICATIONS • Very Small Size SOT-23L ■ Pagers ■ Low Startup Voltage (0.6 V) ■ Cassette Recorders ■ Cordless Telephones ■ Few External Components ■ Adjustable Output Voltage (1.5 V to 15 V) ■ Wide Input Voltage Range (0.6 V to 14 V)


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    PDF OT-23L) TK11812 IC-131-TK11812 Toko inductor

    marking 42

    Abstract: No abstract text available
    Text: r&TOKO TK11042 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 6 mV/°C Output ■ Home and Industrial Thermostats ■ 2.7 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor


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    PDF OT-25) TK11042 TK11042 marking 42

    SOT-23-5 MARKING VE

    Abstract: No abstract text available
    Text: r& T O K O TK11043 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 5 mV/°C Output ■ Home and Industrial Thermostats ■ 2.4 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor


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    PDF OT-25) TK11043 TK11043 SOT-23-5 MARKING VE

    TK11041M-1

    Abstract: nte 108 voltage reg fro 108 TOKO 1002
    Text: r& T O K O TK11041 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 10 mV/°C Output ■ Home and Industrial Thermostats ■ 4.5 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor


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    PDF OT-25) TK11041 TK11041 -227-TK11041 TK11041M-1 nte 108 voltage reg fro 108 TOKO 1002

    transistor c37

    Abstract: R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23
    Text: Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • l.9 ± 0 .2 available in the following packages: 0 .4 5 ± 0.1 0 .9 5 0.9S — SST3 (SST, SOT-23) D — SMT3 (SMT, SC-59)


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    PDF OT-23) SC-59) OT-323) transistor c37 R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 00245=17 b51 « A P X N APIER PHILIPS/DISCRETE BCX17 BCX18 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope, intended fo r application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications


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    PDF BCX17 BCX18 OT-23 BCX19 BCX20 G024bDD

    SOT89 MARKING CODE

    Abstract: RXT-A14 RXT-A28 RXTA28 marking DG sot89 marking code C37 marking a38 marking code B25 sot-89 marking code DH RXT-A76
    Text: U.S. European Type Series MPT SOT-89 IPackage style and dimensions (Unit : mm) M PT Pac ka ge Recommendable copper plate area dimension on printed circuit board (U.S.A. SOT-89) 1.6±0.1 h— 1 - m nn Dimensions \ |p . 4 ± 0 . 1 iTdîo, (1) Bass (2) Collector


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    PDF OT-89) RXT2222A RXT3904 RXT-A14 RXT-A28 RXT2222A 001040b SOT89 MARKING CODE RXTA28 marking DG sot89 marking code C37 marking a38 marking code B25 sot-89 marking code DH RXT-A76