Untitled
Abstract: No abstract text available
Text: MMBD701 Schottky Barrier Diodes SOT-23 Features Surface mount package ideally suited for automatic insertion. Applications Sourced from process GE. Dimensions in inches and millimeters Ordering Information Type No. Marking MMBD701 5HF Package Code
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MMBD701
OT-23
MMBD701
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marking A1 SOT89
Abstract: C1 SOT89 marking A2 SOT89 BAW79A BAW79B BAW79C BAW79D C123 Marking gg SOT89
Text: BAW79A.BAW79D Silicon Switching Diodes 1 Switching applications 2 High breakdown voltage 3 Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW79A GE 1 = A1 2 = C1/2 3 = A2 SOT89 BAW79B GF 1 = A1 2 = C1/2 3 = A2 SOT89
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BAW79A.
BAW79D
VPS05162
EHA07003
BAW79A
BAW79B
BAW79C
marking A1 SOT89
C1 SOT89
marking A2 SOT89
BAW79A
BAW79B
BAW79C
BAW79D
C123
Marking gg SOT89
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GKD transistor
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)
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CHDTC115GKPT
tp300uS;
100MHz
GKD transistor
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CHDTC115GKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)
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CHDTC115GKGP
300uS;
100MHz
CHDTC115GKGP
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79a diode
Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2
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VPS05162
EHA07003
OT-89
EHB00098
EHB00099
EHB00100
EHB00101
79a diode
marking A1 SOT89
MARKING a1 d sot 89
a2 sot-89
w351
Marking gg SOT89
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BAW 79 W
Abstract: A771 diode GG 79 transistor a781 Q62702-A733 Q62702-A771 Q62702-A781 Q62702-A782
Text: Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching ● High breakdown voltage ● Common cathode ● Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
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Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
OT-89
BAW 79 W
A771
diode GG 79
transistor a781
Q62702-A733
Q62702-A771
Q62702-A781
Q62702-A782
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201 zener diode sot23
Abstract: BZX84 Vishay
Text: BZX84 Series VISHAY Vishay Semiconductors Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23
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BZX84
OD-123
BZT52
OT-23
D-74025
10-Jul-03
201 zener diode sot23
BZX84 Vishay
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UL46
Abstract: JESD97 SMP75-8 USBLC6-4
Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data lines protection Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant ■ Benefits ■ ■ ■ ■ ■ ■ Very low capacitance between lines to GND for optimized data integrity and speed
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OT23-6L
UL46
JESD97
SMP75-8
USBLC6-4
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UL46
Abstract: marking UL46 552p
Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ Very low capacitance between lines to GND for optimized data integrity and speed
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OT23-6L
OT23-6L
UL46
marking UL46
552p
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UL46
Abstract: No abstract text available
Text: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ ■ Very low capacitance between lines to GND for
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OT23-6L
OT23-6L
UL46
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Untitled
Abstract: No abstract text available
Text: PJSOT03~PJSOT36 STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 ~ 36 Volts 500 Watts POWER • 500 Watts Peak Pulse Power per Line tp=8/20 s • Low Clamping Voltage • Available for working Voltage Ranging from 3V and 36V MECHANICAL DATA • Case: SOT-23 • Terminals : Solderable per MIL-STD-750,Method 2026
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PJSOT03
PJSOT36
OT-23
MIL-STD-750
PJSOT03
PJSOT05
PJSOT08
PJSOT12
PJSOT15
PJSOT24
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GE SOT-223 MARKING
Abstract: No abstract text available
Text: Bulletin PD-20478 rev. E 04/02 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ045 Units IF AV Rectangular 2.0 A VRRM 45 V IFSM @ tp = 5 µs sine 390 A VF 0.50 V waveform TJ @ 1 Apk, TJ = 125°C
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PD-20478
20CJQ045
OT-223
20CJQ045
EIA-418-1.
GE SOT-223 MARKING
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anode common
Abstract: 20CJQ045 EIA-541 IRFP460
Text: Bulletin PD-20478 rev. D 06/01 20CJQ045 2 Amp SCHOTTKY RECTIFIER SOT-223 Major Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units IF AV Rectangular 2.0 A VRRM 45 V IFSM @ tp = 5 µs sine 390 A VF @ 1 Apk, TJ = 125°C 0.50 V TJ
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PD-20478
20CJQ045
OT-223
20CJQ045
EIA-418-1.
anode common
EIA-541
IRFP460
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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RTO BH
Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Text: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at
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OT-23)
RTO BH
NPN BH RE
IY 925 TRANSISTOR
transistor marking bh ra
transistors 368 & 369
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Silicon N-Channel Junction FET sot23
Abstract: lcr tuner
Text: KSK211 SILICON N-CHANNEL JUNCTION F ET FM TUNER VHF AMPLIFIER SOT-23 . NF =25dB TYP • I Y fs I -9 .0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (TA-25TC ) C haracteristic Sym bol Gate-Drain Voltage Qate-Current Power Dissipation Junction Temperature Storage Temperature
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KSK211
OT-23
TA-25TC
Silicon N-Channel Junction FET sot23
lcr tuner
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SO3572R
Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Text: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo
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CB-166
OT-23)
BFW30
1000m
SO3572R
transistors BFW30
BFR 450
G1 BL
BF115
BFR53R
BFR 91 A N
SO3570
BFR 50
1300 bl
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Toko inductor
Abstract: No abstract text available
Text: RÜTOKO TK11812 DC-DC CONVERTER FEATURES APPLICATIONS • Very Small Size SOT-23L ■ Pagers ■ Low Startup Voltage (0.6 V) ■ Cassette Recorders ■ Cordless Telephones ■ Few External Components ■ Adjustable Output Voltage (1.5 V to 15 V) ■ Wide Input Voltage Range (0.6 V to 14 V)
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OT-23L)
TK11812
IC-131-TK11812
Toko inductor
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marking 42
Abstract: No abstract text available
Text: r&TOKO TK11042 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 6 mV/°C Output ■ Home and Industrial Thermostats ■ 2.7 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor
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OT-25)
TK11042
TK11042
marking 42
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SOT-23-5 MARKING VE
Abstract: No abstract text available
Text: r& T O K O TK11043 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 5 mV/°C Output ■ Home and Industrial Thermostats ■ 2.4 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor
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OT-25)
TK11043
TK11043
SOT-23-5 MARKING VE
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TK11041M-1
Abstract: nte 108 voltage reg fro 108 TOKO 1002
Text: r& T O K O TK11041 TEMPERATURE SENSOR IC FEATURES APPLICATIONS • Linear Output Voltage 10 mV/°C Output ■ Home and Industrial Thermostats ■ 4.5 to 10.0 V Supply Range ■ Automotive Climate Control ■ Miniature Package SOT-25 ■ Battery Charger Temperature Monitor
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OT-25)
TK11041
TK11041
-227-TK11041
TK11041M-1
nte 108 voltage reg
fro 108
TOKO 1002
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transistor c37
Abstract: R1A SURFACE MOUNT TRANSISTOR transistor R1A r1a transistor R1A Marking npn transistor R1A 37 KH SOT23
Text: Die no. C-37 NPN small signal transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • l.9 ± 0 .2 available in the following packages: 0 .4 5 ± 0.1 0 .9 5 0.9S — SST3 (SST, SOT-23) D — SMT3 (SMT, SC-59)
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OT-23)
SC-59)
OT-323)
transistor c37
R1A SURFACE MOUNT TRANSISTOR
transistor R1A
r1a transistor
R1A Marking npn
transistor R1A 37
KH SOT23
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 00245=17 b51 « A P X N APIER PHILIPS/DISCRETE BCX17 BCX18 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope, intended fo r application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications
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BCX17
BCX18
OT-23
BCX19
BCX20
G024bDD
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SOT89 MARKING CODE
Abstract: RXT-A14 RXT-A28 RXTA28 marking DG sot89 marking code C37 marking a38 marking code B25 sot-89 marking code DH RXT-A76
Text: U.S. European Type Series MPT SOT-89 IPackage style and dimensions (Unit : mm) M PT Pac ka ge Recommendable copper plate area dimension on printed circuit board (U.S.A. SOT-89) 1.6±0.1 h— 1 - m nn Dimensions \ |p . 4 ± 0 . 1 iTdîo, (1) Bass (2) Collector
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OT-89)
RXT2222A
RXT3904
RXT-A14
RXT-A28
RXT2222A
001040b
SOT89 MARKING CODE
RXTA28
marking DG sot89
marking code C37
marking a38
marking code B25
sot-89 marking code DH
RXT-A76
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