lucent laser 1550
Abstract: etalon locker GEM 88 DIODE lucent tunable laser diode GEM laser wavelength locker E2532 eml dfb laser diode 1550 lucent 1550 nm
Text: Advance Data Sheet August 1999 E2530-Type Stabilized, Tunable EML Modules Applications • ■ SONET/SDH extended-reach applications Very dense WDM ≤50 GHz channel spacing extra long-haul and metropolitan applications ■ High-speed data communications
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E2530-Type
E2530
20-pin
14-pin)
E2500-series
DS99-348LWP
lucent laser 1550
etalon locker
GEM 88 DIODE
lucent tunable laser
diode GEM
laser wavelength locker
E2532
eml dfb laser diode 1550
lucent 1550 nm
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80n60
Abstract: O M 335 80N60B PF650
Text: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A
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80N60BD1
OT-227
728B1
80n60
O M 335
80N60B
PF650
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mj 340
Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM
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50N60AU1
O-264
D-68623
mj 340
MJ340
IXSK50N60AU1
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18l0015wh
Abstract: 18L0012WH 9L11XPB015S Heavy Duty Distribution Arresters 9L20 18L0065WH relay 04501 9L15ECC001 0-650 VAC 3 Pole 18L0009WH 54L514 GED-7060A
Text: Capacitors, Arresters and Harmonic Filters Line/Load Reactors—up to Line/Load Reactors—Three-phase Reactors .20-4 Matrix Series D Harmonic Filters .20-6
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60CD1
PLUS247â
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P 1010
Abstract: AL 102 074d
Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60BD1
PLUS247â
O-247
P 1010
AL 102
074d
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Untitled
Abstract: No abstract text available
Text: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM
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50N60AU1
125-C
O-264
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Untitled
Abstract: No abstract text available
Text: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2
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62N60U1
OT-227
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ixsn35n100au1
Abstract: No abstract text available
Text: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient
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IXSN35N100AU1
OT-227B
1250C,
80A/us
D-68916;
ixsn35n100au1
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSK35N120AU1 V, CES IC25 v CE sat 1200 V 70 A 4V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES VCGR v GES v GEM T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; R GE = 1 MQ 1200 V Maximum Ratings
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IXSK35N120AU1
O-264
35N120AU1
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3un6
Abstract: No abstract text available
Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat
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30N60BD1
30N60BD1
O-268
freq00
3un6
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C7650
Abstract: 40n60b TYP 513 309 40N60BD1
Text: n ix Y S Advanced Technical Information IGBT with Diode IXSK 40N60BD1 IXSX 40N60BD1 PLUS247 package v CES ^C25 VCE sat Short Circuit SOA Capability oc g n r ^fi(typ) = 600 V = 75 A = 2.2 V = 120 ns * ] ÔE Symbol Test Conditions V CES Tj =25°Cto150°C
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PLUS247TM
40N60BD1
40N60BD1
Cto150
to150
PLUS247TM
O-264AA
C7650
40n60b
TYP 513 309
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ixsn35n100au1
Abstract: No abstract text available
Text: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous
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IXSN35N100AU1
-15A/ijs,
80A/us
D-68916;
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80N60AU1
Abstract: IXYS IGBT
Text: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings
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80N60AU1
OT-227
E153432
80N60AU1
IXYS IGBT
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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31N60D1
O-268
GES12
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Untitled
Abstract: No abstract text available
Text: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600
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20N60BD1
O-247AD
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous
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80N60AU1
OT-227
E153432
4bflb22b
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ix6h
Abstract: No abstract text available
Text: PIXYS Hi Per FAST IGBT with Diode IXGH 22N50BU1 CES *C<25 VCE sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Symbol Test Conditions VCES v CGR ^ = 25° C to 150° C T, = 25° C to 150° C; RGE= 1 MQ 500 500 V V VGES v GEM Continuous T ransient
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22N50BU1
O-247
ix6h
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dc servo igbt
Abstract: No abstract text available
Text: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES
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80N60AU1
OT-227
E153432
dc servo igbt
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Untitled
Abstract: No abstract text available
Text: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V
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52N60AU1
OT-227
4bflb22b
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings
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50N60AU1
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Untitled
Abstract: No abstract text available
Text: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
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TAG 881
Abstract: No abstract text available
Text: Preliminary data IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode Combi Pack Short Circuit SOA Capability T 0 - 2 4 7 H o le-less SM D 5 0 N 6 0 A U 1 S Sym bol T e s t C o n d itio n s v CES Tj = 25°C to 150°C 600 V v CGR T ,j = 25°C to 150°C ;' RrF = 1 MO
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IXSX50N60AU1
IXSX50N60AU1S
TAG 881
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T 3512 H diode
Abstract: diode T 3512 H ds 35-12 e 35-12A7
Text: □IXYS MWI 35-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 62 A = 1200 V V C E s a t ty p . = 2 . 2 V Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V V GES Continuous
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