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    GENERAL ELECTRIC OPTOELECTRONICS Search Results

    GENERAL ELECTRIC OPTOELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL ELECTRIC OPTOELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPS active power 600

    Abstract: General Electric 3000 VA UPS VAR meter 1000 va ups service manual FLUKE 1000 va UPS design EN50160
    Text: 86-2012:QuarkCatalogTempNew 8/28/12 4:13 PM Page 86 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 1 Power Loggers, Clamp Meter and Analyzers Fluke 1735 Power Logger NEC compliant load studies, energy consumption testing, and general power quality logging. The Fluke 1735 Power Logger is the ideal electrician’s tool for conducting load studies according to National Electric Code


    Original     		PDF FLUKE-435-II FLUKE-434-II FLUKE-435-II/BASIC FLUKE-434-II/BASIC UPS active power 600 General Electric 3000 VA UPS VAR meter 1000 va ups service manual FLUKE 1000 va UPS design EN50160

    POWER TRANSFORMER E154515

    Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
    Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD


    Original     		PDF

    elmwood sensors ltd

    Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
    Text: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this


    Original     		PDF BMIC/Ele03 elmwood sensors ltd elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics

    Sharp Semiconductor Lasers

    Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
    Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical


    Original     		PDF MIL-STD-883 SMA04033 Sharp Semiconductor Lasers AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics

    laptop led display

    Abstract: Battery Chargers linear ptc thermistors 0805 NTHS0603 4437 k 4110 NTHS0402 NTHS-0805 laptop parts 4842
    Text: Fo r Comme rcia l A pplic ations NTHS M, C and T Series Assemblies PTFT TFPT w w w. v i s h a y. c o m SELECTOR GUIDE NTC AND LINEAR PTC THERMISTORS RESISTIVE PRODUCTS V I S H AY I N T E R T E C H N O L O G Y, I N C . NTC and Linear PTC Thermistors For Commercial Applications


    Original     		PDF rang337-2920 VMN-SG0105-0602 laptop led display Battery Chargers linear ptc thermistors 0805 NTHS0603 4437 k 4110 NTHS0402 NTHS-0805 laptop parts 4842

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    MOSFET FOR SWITCHING FREQUENCY OF MORE THAN 20mhz

    Abstract: AN-7500
    Text: Understanding Power MOSFETs October 1999 Application Note Introduction /Title 7500 Subect Under tandng ower OSETs, nteril orpoation) Autho ) Keyords ) Cretor () DOCI FO dfark Pageode Useutines DOCIEW dfark Power MOSFETs (Metal Oxide Semiconductor, Field Effect


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    AN72

    Abstract: AN-7500
    Text: Understanding Power MOSFETs Application Note Introduction [ /Title AN72 44 /Subject (Under standing Power MOSFETs, Intersil Corporation) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Power MOSFETs (Metal Oxide Semiconductor, Field Effect


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    Untitled

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in


    Original     		PDF com/ref/2014s12 TCPT1350X01 TCUT1350X01 SiZ340DT VMN-MS6834-1312

    lexan IR

    Abstract: lexan 121 21051 color lexan 121 lexan 9034 lexan IR 121 31142 lexan 940a lexan 920A lexan 121 21051 2405O lexan 21092
    Text: IRMS5000 Microline, 115 Kb/s Data Transceiver Appnote 81 Figure 1. Window geometry Introduction The IRMS5000 is a fully integrated 115 Kb/s optical transceiver module designed to meet the IrDA Physical Layer specification. The following application note describes specific attributes of


    Original     		PDF IRMS5000 IRMS5000 IRMS5000) 1-888-Infineon lexan IR lexan 121 21051 color lexan 121 lexan 9034 lexan IR 121 31142 lexan 940a lexan 920A lexan 121 21051 2405O lexan 21092

    motorola 7513

    Abstract: "General Electric SCR Manual" 6th SCR Handbook, General electric General Electric SCR Manual 6th edition AN918 MOTOROLA AN918 Paralleling Power MOSFETs in Switching Applications Analog/NTP 7513 Parallel operation mosfet Severns TA84-5
    Text: Parallel Operation Of Semiconductor Switches Application Note Title N93 bt raleran Of minctor itch utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch June 1993 Figure 1 . The dynamic area is only a fraction of the total waveform, but it is by far the most important when it comes


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    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777

    general electric optoelectronics

    Abstract: FU-68
    Text: MITSUBISHI DISCRETE SC blE î • b E M ^ a ^ 0014433 GDI ■ MIT5 ^ À mitsubishi OPTOELECTRONICS FU-68SDF-1 ELECTRONIC DEVICE GROUP DFB-LD Module with Single-mode Fiber Pigtail GENERAL FEATURES Module type FU-68SDF-1 is a 1.55nm DFB-LD module with a single-mode optical fiber pigtail.


    OCR Scan     		PDF FU-68SDF-1 FU-68SDF-1 FU-65SDF-4 general electric optoelectronics FU-68

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2

    L14H2

    Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14H2 L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR

    ssl55c

    Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 ssl55c photo transistor 2n5777 2N5779 PHOTO DIODE LED55C L14F1 H74A1

    L14F1 npn photo transistor

    Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1

    L14F1 phototransistor

    Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 phototransistor L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator 2N5777 A3-H11 2N5778 L14G3

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor