Untitled
Abstract: No abstract text available
Text: FDMS3662 N-Channel Power Trench MOSFET 100V, 39A, 14.8mΩ Features General Description Max rDS on = 14.8mΩ at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS3662
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Untitled
Abstract: No abstract text available
Text: HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 39A, 35mΩ D D Features Typ rDS on = 28mΩ at VGS = 10V, ID = 39A Typ Qg(tot) = 56nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB
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HUF76633S3ST
O-263AB
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FQP45N03LT
Abstract: FQP45N03L
Text: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03LT
FQP45N03L
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fdd6676as
Abstract: TO-252 fairchild FDD6676A
Text: FDD6676AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
TO-252 fairchild
FDD6676A
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FCH041N60E
Abstract: No abstract text available
Text: SuperFET II FCH041N60E N-Channel MOSFET Features Description ® The SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
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FCH041N60E
FCH041N60E
285nC)
735pF)
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FDD6676A
Abstract: FDD6676AS
Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
FDD6676A
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FDPF39N20
Abstract: No abstract text available
Text: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description • RDS on = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP39N20/
FPDF39N20
FDP39N20
FDPF39N20
FDPF39N20
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Untitled
Abstract: No abstract text available
Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
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Untitled
Abstract: No abstract text available
Text: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH041N60E
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Untitled
Abstract: No abstract text available
Text: FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 mΩ Features Description • RDS on = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP39N20
FDPF39N20
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Untitled
Abstract: No abstract text available
Text: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39
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HT7939A
HT7939A
200kHz
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Untitled
Abstract: No abstract text available
Text: HT7939A High Current and Performance White LED Driver Feature General Description • Input voltage range: 2.6V~5.5V The HT7939A is a high efficiency boost converter for driving multiple White LEDs using current mode operation. The device is designed to drive up to 39
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HT7939A
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GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
no422-3781
r14525
DL150/D
GE Transient Voltage Suppression Manual
diode 930 6V8A
2n2646 practical application circuits
UJT 2N2646
Transient Voltage Suppression Manual
Bidirectional Diode Thyristors 1.5ke 30A
Zener Diode SOD323 pdz 4 .7b
919b diode
varistor SVC 471 14
melf diode marking code
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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Untitled
Abstract: No abstract text available
Text: 60 V, 48 A, 5.3 mΩ Low RDS ON N ch Trench Power MOSFET DKI06075 Features Package TO-252 V(BR)DSS - 60 V (ID = 100 µA) ID - 48 A RDS(ON) - 7.0 mΩ max. (VGS = 10 V, ID = 34 A)
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DKI06075
O-252
DKI06075-DS
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Untitled
Abstract: No abstract text available
Text: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS - 60 V (ID = 100 µA) ID - 78 A RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)
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SKI06073
O-263
SKI06073-DS
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Abstract: No abstract text available
Text: 60 V, 40 A, 4.8 mΩ Low RDS ON N ch Trench Power MOSFET GKI06071 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 40 A RDS(ON) - 6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)
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GKI06071
GKI06071-DS
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Untitled
Abstract: No abstract text available
Text: 60 V, 78 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 78 A RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)
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EKI06075
O-220
EKI06075-DS
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Untitled
Abstract: No abstract text available
Text: 60 V, 52 A, 5.1 mΩ Low RDS ON N ch Trench Power MOSFET FKI06075 Features Package V(BR)DSS - 60 V (ID = 100 µA) ID - 52 A RDS(ON) - 6.6 mΩ max. (VGS = 10 V, ID = 39.0 A)
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FKI06075
O-220F
FKI06075-DS
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A1907
Abstract: TO-220F-3SG
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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ENA1907A
BMS3003
13200pF
PW10s,
--36V,
A1907-7/7
A1907
TO-220F-3SG
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A1907
Abstract: TF-680
Text: BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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BMS3003
ENA1907
13200pF
PW10s,
A1907-5/5
A1907
TF-680
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Untitled
Abstract: No abstract text available
Text: BMS3003 Ordering number : ENA1907A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications
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BMS3003
ENA1907A
13200pF
A1907-7/7
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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