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    GENERAL SEMICONDUCTOR DIODE MARKING 49 Search Results

    GENERAL SEMICONDUCTOR DIODE MARKING 49 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR DIODE MARKING 49 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		PDF FDP150N10

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		PDF FDP150N10 FDP150N10

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDI150N10 FDI150N10

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		PDF FDP150N10

    Untitled

    Abstract: No abstract text available
    Text: FDB150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		PDF FDB150N10 FDB150N10

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB66N15 FDB66N15 FDB66N15TM

    52N20

    Abstract: fdb fairchild FDB52N20
    Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB52N20 FDB52N20 FDB52N20TM 52N20 fdb fairchild

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP150N10 O-220 FDP150N10

    FDB150N10

    Abstract: marking 49a
    Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB150N10 FDB150N10 marking 49a

    FDMS7658

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS7658AS FDMS7658AS FDMS7658

    Untitled

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS7658AS FDMS7658AS

    Untitled

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Max rDS on = 1.9 mΩ at VGS = 10 V, ID = 28 A The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS7658AS FDMS7658AS

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDP150N10 O-220 FDP150N10

    Untitled

    Abstract: No abstract text available
    Text: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS0309AS FDMS0309AS

    Untitled

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS

    FDMS8660AS

    Abstract: 4410 mosfet fairchild top marking fdms8660
    Text: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS 4410 mosfet fairchild top marking fdms8660

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDI150N10 O-262

    Untitled

    Abstract: No abstract text available
    Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description „ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC8321L FDMC8321L

    Untitled

    Abstract: No abstract text available
    Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description ̈ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC8321L

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC7582 FDMC7582

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC7582 FDMC7582

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI150N10 O-262 FDI150N10

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description ̈ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC7582

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®


    Original     		PDF