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    GENERAL SEMICONDUCTOR INDUSTRIES Search Results

    GENERAL SEMICONDUCTOR INDUSTRIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR INDUSTRIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ap6k

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL - w/ S E MI CONDU CT OR General Semiconductor Industries, Inc. FEATURES • 600wattsPeakPulsePower dissipation • Avallableinrangesfrom6.8to 400V volts • BIDIRECTIONAL types available • Each device 100% tested MAXIMUM RATINGS


    OCR Scan     		PDF 600wattsPeakPulsePower Ap6k

    28 volt transzorb

    Abstract: ict-5 diode ict diode 3 Volt transzorb TRANSZORB diode HC- 543 transzorb application note transzorb symbol What is a TRANSZORB TRANSZORB
    Text: SÛUARE D CO/ GENERAL ^ 3918590 GENERAL SEMICONDUCTOR General ^ ^ Semiconductor ^ « Industries, Inc. î • ISOOwattoPeakPulsePower dissipation • Avallabtelnrangesfrom5.0to45 volts • Transient protection or CMOS, MOS, Bidirectional ICs (TTL, ECL, DTL, RTL and Linear Functions


    OCR Scan     		PDF 0002GCn 1S00wattoPeakPulsePower 0to45 Eachdevlce100 28 volt transzorb ict-5 diode ict diode 3 Volt transzorb TRANSZORB diode HC- 543 transzorb application note transzorb symbol What is a TRANSZORB TRANSZORB

    2n4305

    Abstract: No abstract text available
    Text: GENERAL TS SEMICONDUCTOR 3918590 GENERAL SEMICONDUCTOR , l^r . General Semiconductor i^L Industries, Ine . DÉ”! BTlñSTO 0GDIT34 3 T2C 01934 O 7 ^ 3 3 ^ 5 1 - NPN TRANSISTOR CHIP S q U H R E I] CQMPRNY “27” Typical Device Types: 2N4305, 2N5002, 2N5658, 2N5665, 2N5667


    OCR Scan     		PDF 0GDIT34 2N4305, 2N5002, 2N5658, 2N5665, 2N5667 20nsec 100nsec 500nsec 150nsec 2n4305

    Untitled

    Abstract: No abstract text available
    Text: GENERAL TË SEMICONDUCTOR 3918590 GENERAL 72C SEMICONDUCTOR General 2 ^ Semiconductor J^L Industries, Ine • dT | OODITBÖ 01938 D □ 1 ““ 7 ^ 3 3 H NPN TRANSISTOR CHIP « O ft» S Q U R R E D COMPANY Typical Device Types: 2N6274-2N6277, G STU15040


    OCR Scan     		PDF 2N6274-2N6277, STU15040 30nsec 300nsec 750nsec 220nsec TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672


    OCR Scan     		PDF 2N1724, 2N5671, 2N5672 250nsec 700nsec 200nsec 100mA, TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: TS GENERAL SEMICONDUCTOR i>F| 3^105^0 DDDE0S3 =1 |~~ f 3918590 GENERAL S EMI CON DU CT OR General ^ Semiconductor Industries, Inc. 95D 02053' D ' AC POWER & TELEPHONE/ MODEM PROTECTOR 120KMP1 120KMP2 • D U B B ITI COMPHWY - 3.0" 15A Circuit Breaker Female


    OCR Scan     		PDF 120KMP1 120KMP2 120VAC

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL ~7 Ë ^ B 'ilñ S 'íD 72C 01936 SEMICONDUCTOR General Semiconductor Industries, Inc• D Ë ]| □ 0 D l c1 3 t i 7 7^ 3 2 -4 5 - _ NPN TRANSISTOR C H IP g q U H H E D COM PANY “ T y p ic a l D evice Types: 2 N 6 92 0, 2N6921


    OCR Scan     		PDF 2N6921 20nsec 100nsec 450nsec TWX910-950-1942

    taig

    Abstract: VE60 2N5218 TWX910-950-1942
    Text: ISÖUARE D CO/ GENERAL *¡5 GENERAL S EMI CONDUCT OR 3918590 j> General ^ Semiconductor « Industries, Inc. m ÖSESSGÖ D u o e i n a 95D 02 119 D S Q U A R E Ti COMPHNV NPN SWITCHING POWER TRANSISTORS This unique device utilizes General Semiconductor Industries’ C 2R process which


    OCR Scan     		PDF 525SDÃ 2N5218 10MHz 100mA 10/JS 30Qps, TWX910-950-1942 taig VE60 2N5218 TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICON DUC TOR TS D eT | 3T 105^-0 DOOSOEfl 95D 0 2 0 2 8 3918590 GENERAL SEMICONDUCTOR General ^ Semiconductor Industries,Inc. Tr a ns Zo r b TRANSIENT VOLTAGE SUPPRESSORS SAC5.0 SQUHRE TÌ COMPHWY THRU SAC50 _ MAXIMUM RATINGS 500 Watts Peak Pulse Power


    OCR Scan     		PDF SAC50

    te 02214

    Abstract: XGSR5035 XGSR5040 TWX910-950-1942 XGSR5030
    Text: SßUARE » CO/ SS GENERAL 3918590 GENERAL » • ÜG022m SEMICONDUCTOR General Sem iconductor « Industries, Inc. ^ ÖS255GÖ 95D 5 02214 C 2R.„ XGSR5030 XGSR5035 XGSR5040 S O U H B B H COMPRNY T- 3 3 -/3 NPN SW ITCHING POWER TRANSISTORS This unique series utilizes General Semiconductor Industriès' C 2R * process which


    OCR Scan     		PDF QQ02Sm XGSR5030 XGSR5035 XGSR5040 T-33-/3 O-204AA XGSR5040 10MHz te 02214 TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: "73 GENERAL SEMICONDUCTOR DË"| 3=1105^0 -Oüdl'lB'l H | ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020


    OCR Scan     		PDF 2N6249-2N6251, 2N6338-2N6341, GSTU30020 30nsec 150nsec 1500nsec 280nsec TWX910-950-1942

    XGSR50020

    Abstract: TWX910-950-1942 GENERAL SEMICONDUCTOR
    Text: S JIJARE D CO/ G EN ER A L 3918590 v TS D • ñSaSSOñ 0005217 GENERAL SEMICONDUCTOR General ^ Semiconductor ,> Industries, Ine • fl 95D 0 2 2 1 7 CR, XGSR50020 S P U R R E T I CDM PRNY nr- 3 J - / J NPN SW ITCH ING POW ER TRA N SISTO R S This unique device utilizes General Semiconductor Industries’ C2R process which


    OCR Scan     		PDF 00D5517 XGSR50020 10MHz 10/JS 852B1 TWX910-950-1942 XGSR50020 TWX910-950-1942 GENERAL SEMICONDUCTOR

    gex 15a

    Abstract: GEZ 55A
    Text: GENERAL SEMICONDUCTOR 3918590 G EN ER AL ~^5 95D SEMICONDUCTOR DE I Bci l ñ S ,i D 000E033 02033 SURFACE MOUNT ^ General ^ Semiconductor • Industries, Inc, T ra n s Z o rb SMC SERIES 5.0 THRU 170.0 VOLTS 1500 WATTS 5 Q U H H E n CD M PHN Y UNIDIRECTIONAL


    OCR Scan     		PDF 000E033 10/1000us) gex 15a GEZ 55A

    Sprague extralytic

    Abstract: 2N6981A 2N6920 2N6920A 2N6921 2N6921A 2N6980 2N6980A 2N6981 Extralytic 600
    Text: - Sß UARE » CO/ GENERAL ^ 3 9 1 8 5 9 0 GENERAL D • ÔS 2 S S 0 Ô Q0021Sb SEMICONDUCTOR General ^ ^ Semiconductor i^L « Industries, Ine• 95D 02156 ^ HIGH POWER NPN 3 2N6920, 2N6920A 2N6921,2N6921A 2N6980, 2N6980A 2N6981,2N6981A S Q U H H E TÌ COMPANY


    OCR Scan     		PDF 000215b 2N6920, 2N6920A 2N6921, 2N6921A 2N6980, 2N6980A 2N6981 2N6981A O-204AA Sprague extralytic 2N6981A 2N6920 2N6921 2N6980 Extralytic 600

    Sprague extralytic

    Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
    Text: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness


    OCR Scan     		PDF 2N6924 2N6924A 2N6925 2N6925A 0tO-95O-1942 Sprague extralytic 2N6925A 6924a IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12

    ESDA-12

    Abstract: ESDA-10 ESDA-30 MPTE tucker ESDA-15 1N5629 1N5907 DDD200S ESDA-50
    Text: IS SÛ UA RE D CO/ G E N E R A L 3918590 GENERAL SEMICONDUCTOR General ^ ^ Semiconductor ^ • Industries, Inc. D • 95D ^ FEATURES • 3600 waits Peak Pulse Power dissipation 8x 20 impulse • Availableinrangesfrom5.0to50 volts • Zero Inductance structure


    OCR Scan     		PDF 52SSGÃ DDD200S 0to50 100amps, ESDA-12 ESDA-10 ESDA-30 MPTE tucker ESDA-15 1N5629 1N5907 DDD200S ESDA-50

    c 3421 transistor

    Abstract: GSRU20040 2n6924 gsru200 2N2891
    Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .


    OCR Scan     		PDF MIL-STD-750, MIL-STD-883C, c 3421 transistor GSRU20040 2n6924 gsru200 2N2891

    TL181

    Abstract: transzorb DLZ-5A transzorb symbol DLZ-12 DLZ-12A DLZ-13C DLZ-17 DLZ-19C DLZ-24
    Text: SÛUARE » „3918590 CO/ GENERAL ÔS2SSGÔ 9 5D GENERAL SEMICONDUCTOR 0GGED03 ü 02003 D LZ-S TH R U 30 SERIES General ^ Semiconductor ^ • Industries, Inc • SQ U AR E T1 COMPHWY DATA LINE Z0RB Tr a n s Z o r b FAMILY T - V2 ~ FEATURES Multiple TransZorb® Array


    OCR Scan     		PDF 20/js) TWX910-950-1942 TL181 transzorb DLZ-5A transzorb symbol DLZ-12 DLZ-12A DLZ-13C DLZ-17 DLZ-19C DLZ-24

    fjs 500

    Abstract: CN400 h d 2001
    Text: ^ General 2^ Semiconductor ^ . Industries, Inc. HIGH POWER NPN Switch P h i / / / TRANSISTORS The GSRU series of NPN transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R manufacturing process which provides surface stabilization for high voltage


    OCR Scan     		PDF 750ns fjs 500 CN400 h d 2001

    SWT200K

    Abstract: SWT080K J180 GS035
    Text: SÛUARE D CO/ GENERAL ^5 3 9 1 8 5 9 0 GENERAL SEMICONDUCTOR D ÔS2SSDÛ 0G G 20 35 95D 0 2 0 3 5 U N ID IR E C T IO N A L ^ General ^ Semiconductor J^L « Industries, Inc. FEATURES Up to 400A Peak Pulse Current High Holding Current Nanosecond Response Time


    OCR Scan     		PDF GS035 50/60Hz) 50/60Hz, SWT080K: SWT200K: SWT200K SWT080K J180 GS035

    GSRU14040

    Abstract: ru140
    Text: General Semiconductor Industries, Inc. G S R U 1 40 4 0 tw itc h P faH H HIGH POWER NPN TRANSISTORS The GSRU series of NPN silicon transistors is designed for high speed switching systems. The GSRU14040 features General Semiconductor Industries' C2R manufacturing process to


    OCR Scan     		PDF GSRU14040 ru140

    GSRU15040

    Abstract: TWX910-950-1942 General Semiconductor Industries GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040A QSRU15040 ML3500
    Text: SÛUARE D CO/ GENERAL TS _39J_859Q_GENERAL ^ D • ÔSESSÜâ QQD21Û2 SEMICONDUCTOR 4 95D 02182 GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040 GSRU15040A General ^ Semiconductor • Industries, Inc • 50UHREnCDM PHW Y 7^33 -/.T ” HIGH POWER NPN S W ltc fl P /U S ^ ttt TRANSISTORS


    OCR Scan     		PDF Q0D21Ã GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040 GSRU15040A T0-204AA B52B1 TWX910-950-1942 GSRU15040 TWX910-950-1942 General Semiconductor Industries GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040A QSRU15040 ML3500

    3A120

    Abstract: 3A133 TWX910-950-1942
    Text: SÛUARE D 3918590 GENERAL CO/ GENERAL 15 95D SEMICONDUCTOR Û S2 SS0 Ô 01993 0001 113 P UNIDIRECTIONAL . ^ General Semiconductor « Industries, Inc. FEATURES T hyZorb T RA N SIEN T VOLTAGE SU P P R E S S O R S S D U H R E TÌ C O M P A N Y APPLICATION


    OCR Scan     		PDF x20/js, 3A120, 3A133 50/60Hz) 50/60HZ TWX910-950-1942 3A120 TWX910-950-1942

    JS 027

    Abstract: No abstract text available
    Text: General ^ 2^ Semiconductor ^ » Industries, Inc. G S TU 10030 G STU 10035 G STU 10040 fw/tcA P/tt$ TRANSISTORS HIGH POWER NPN The GSTU10040 series of NPN silicon transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R®


    OCR Scan     		PDF GSTU10040 280ns JS 027