B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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WRT801
Abstract: No abstract text available
Text: Z-Power LED X10490 Technical Data Sheet Specification WRT801 SSC Drawn Approval 고객명 Approval Rev. 02 August 2009 www.ZLED.com 서식번호 : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet CONTENTS 1. Features 2. Absolute Maximum Ratings
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X10490
WRT801
SSC-QP-7-07-24
WRT801
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UD1006
Abstract: UD1006FR-H A1745
Text: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications
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ENA1745A
UD1006FR
A1745-5/5
UD1006
UD1006FR-H
A1745
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A1845
Abstract: No abstract text available
Text: UD2006FR Ordering number : ENA1845 SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1845
UD2006FR
A1845-3/3
A1845
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A1845
Abstract: n3011 ud2006 a18452
Text: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1845A
UD2006FR
A1845-3/3
A1845
n3011
ud2006
a18452
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Untitled
Abstract: No abstract text available
Text: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications
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UD1006FR
ENA1745A
A1745-5/5
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Untitled
Abstract: No abstract text available
Text: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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UD2006LS-SB
ENA1846
A1846-3/3
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Untitled
Abstract: No abstract text available
Text: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode UD2006FR Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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UD2006FR
ENA1845A
A1845-3/3
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UD1006
Abstract: TO-220F JEDEC UD1006FR 318 MARKING
Text: UD1006FR Ordering number : ENA1745 SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V. trr=60ns typ (IF=0.5A, IR=1A). • • VF=1.3V max (IF=10A). Halogen free compliance Specifications
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UD1006FR
ENA1745
A1745-3/3
UD1006
TO-220F JEDEC
UD1006FR
318 MARKING
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PDF
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A1846
Abstract: No abstract text available
Text: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1846
UD2006LS-SB
A1846-3/3
A1846
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Untitled
Abstract: No abstract text available
Text: 2SC3122 TOSHIBA TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE < ; r w êf 3 mm j j 1 TV VHF RF AMPLIFIER APPLICATIONS. FEATURES : High Gain : Gpe = 24dB Typ. (f=200MHz) • Low Noise : NF = 2.UdB (Typ.) (f=200MHz) • Excellent Forward AGO Characteristics,
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2SC3122
200MHz)
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time
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UD0506T
ENA1705A
A1705-7/7
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A1705
Abstract: UD0506T-H ENA1705A marking TP
Text: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time
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ENA1705A
UD0506T
A1705-7/7
A1705
UD0506T-H
ENA1705A
marking TP
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ultra fast diode 5a 84v
Abstract: FDMF6730 MO-220 6X6 mlp SPM 1000 plus
Text: FDMF6730 Driver plus FET Multi-chip Module Features General Description Over 95% efficiency The FDMF6730 is a high efficiency Driver plus MOSFET power stage solution optimized for Ultra Mobile PC UMPC system power voltage supplies. It is fully compliant with the Intel UltraMobile Driver MOS (uDrMOS) Specification. The MOSFETs and
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FDMF6730
FDMF6730
V-16V
ultra fast diode 5a 84v
MO-220
6X6 mlp
SPM 1000 plus
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMF6730 Driver plus FET Multi-chip Module Features General Description 1 Over 95% efficiency The FDMF6730 is a high efficiency Driver plus MOSFET power stage solution optimized for Ultra Mobile PC UMPC system power voltage supplies. It is fully compliant with the Intel UltraMobile Driver MOS (uDrMOS) Specification. The MOSFETs and
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FDMF6730
FDMF6730
V-16V
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ewt806
Abstract: 3055 smd ED-4701
Text: Z-Power LED X10490 Technical Data Sheet *Customer : Specification EWT806 CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 00 July, 2009 서식번호 : SSC-QP-7-07-24 Rev.01 Z-Power LED X10490 Technical Data Sheet Revision History Revision No.
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X10490
EWT806
SSC-QP-7-07-24
ewt806
3055 smd
ED-4701
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Untitled
Abstract: No abstract text available
Text: Z-Power LED X10490 Technical Data Sheet Specification KWT801-S SSC Drawn Approval 고객명 Approval Rev. 00 November 2007 www.ZLED.com 서식번호 : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet KWT801-S 1. Features 2. Absolute Maximum Ratings
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X10490
KWT801-S
SSC-QP-7-07-24
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STW8T16C
Abstract: SMD MARKING CODE h23 H24 SMD DIODE smd marking H24 z5 smd zener diode code D5 smd diode marking B3 MARKING G43
Text: Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-STW8T16C SSC-STW8T16C March 2013 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 Rev.01 Z-Power LED X10490 Technical Data Sheet STW8T16C Description This surface-mount LED comes in standard
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X10490
SSC-STW8T16C
SSC-STW8T16C
SSC-QP-7-07-12
STW8T16C
STW8T16C
SMD MARKING CODE h23
H24 SMD DIODE
smd marking H24
z5 smd zener diode code D5
smd diode marking B3
MARKING G43
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Untitled
Abstract: No abstract text available
Text: LM 48411 LM48411 Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio Power Amplifierwith E2S Texas In s t r u m e n t s Literature Number: SNAS399F & Semiconductor LM 48411 H oom er A udio Power Amplifier Series Ultra-Low EMI, Filterless, 2.5W, Stereo, Class D Audio
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LM48411
SNAS399F
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SSC 9500
Abstract: Zener diode smd marking code G5 03751
Text: Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-STW9Q14B SSCSSC-STW9Q14B September 2012 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 Rev.01 Z-Power LED X10490 Technical Data Sheet STW9Q14B Description This surface-mount LED comes in standard
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X10490
SSC-STW9Q14B
SSCSSC-STW9Q14B
SSC-QP-7-07-12
STW9Q14B
SSC 9500
Zener diode smd marking code G5
03751
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: LM 4671 LM4671 Filterless High Efficiency 2.5W Switching Audio Amplifier T ex a s In s t r u m e n t s Literature Number: SNAS258C a l Semiconductor LM4671 ^B oom er A udio P ow er A m p lifie r Series F ilterless High E fficiency 2 .5 W S w itching A u d io A m p lifie r
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LM4671
SNAS258C
LM4671
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