FGD3N60UNDF
Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us
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FGD3N60UNDF
FGD3N60UNDF
O-252
600v 3a ultra fast recovery diode
GENERAL SEMICONDUCTOR MARKING UJ
3a ultra fast diode
UJ DIODE MARKING
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FGAF40N60UFTU
Abstract: No abstract text available
Text: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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FGAF40N60UF
FGAF40N60UF
FGAF40N60UFTU
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G2N60
Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
Text: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is
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SGM2N60UF
OT-223
SGM2N60UF
SGM2N60UFTF
G2N60
G2N6
G2N60UF
transistors sot-223 06a
sGm2N60
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FGA40N60UFD
Abstract: FGA40N60
Text: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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FGA40N60UFD
FGA40N60UFD
FGA40N60UFDTU
FGA40N60
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Untitled
Abstract: No abstract text available
Text: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
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FGP10N60UNDF
FGP10N60UNDF
O-220
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GENERAL SEMICONDUCTOR MARKING UJ
Abstract: No abstract text available
Text: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is
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FGAF40N60UFD
FGAF40N60UFD
FGAF40N60UFDTU
GENERAL SEMICONDUCTOR MARKING UJ
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Untitled
Abstract: No abstract text available
Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
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FGA25S125P
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2SC3441
Abstract: 2SA1366
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.
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2SC3441
2SC3441
2SA1366.
600mA
150MHz
SC-59
O-236
Taa25
2SA1366
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GENERAL SEMICONDUCTOR MARKING UJ
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.
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MC2836
MC2836
GENERAL SEMICONDUCTOR MARKING UJ
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z107
Abstract: marking mitsubishi
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2835 FOR GENERAL SWITCHING APPLICATION SIUCON EPITAXIAL TYPE SERIES TYPE) DESCRIPTION Mitsubishi MC2835 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode.it is designed for general switching application.
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MC2835
MC2835
z107
marking mitsubishi
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MC911
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC911 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TVPE COMMON ANODE) DESCRIPTION Mitsubishi M C 9 1 1 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING unit
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MC911
MC911
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marking mitsubishi
Abstract: MC2846 UJ DIODE MARKING
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.
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MC2846
MC2846
marking mitsubishi
UJ DIODE MARKING
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2844 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2844 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING . ± 0.2 2 1 type diode,especially designed for high speed switching application.
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MC2844
MC2844
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MC283-1
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2831 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2831 is a super mini package plastic seal type silicon epitaxial Unitimm OUTLINE DRAWING 2-5 -0.3 type diode,especially designed for high speed switching application.
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MC2831
MC2831
MC283-1
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mc2850
Abstract: 1F marking
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.
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MC2850
MC2850
SC-70
1F marking
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2SJ145
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch
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2SJ145
2SJ145
SC-70
10mVrms.
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2SK3321
Abstract: 2SK332
Text: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)
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2SK3321
2SK3321
2SK332
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2SA1255
Abstract: 2SC3138
Text: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 2.5-0.3 High Voltage • • VCBO = 200 V (Max.) Vf!F,n = 200 V (Max.) Small Flat Package Complementary to 2SA1255
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2SC3138
2SA1255
O-236MOD
SC-59
2SC3138
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2SC3326
Abstract: marking cc
Text: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5
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2SC3326
2SC3326
marking cc
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2SA1255
Abstract: 2SC3138
Text: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255
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2SC3138
2SA1255
O-236MOD
SC-59
961001EAA1
2SA1255
2SC3138
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mc2848
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2848 F O R H IG H S P E E D S W IT C H IN G A P P L IC A T IO N _ S IL IC O N E P IT A X IA L T Y P E (C O M M O N A N O D E ) D E S C R IP T IO N Mitsubishi MC2848 is a super mini package plastic seal type silicon epitaxial
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MC2848
MC2848
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Untitled
Abstract: No abstract text available
Text: T P C 8 0 1 3 —H TO S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED U-MOSDI T P C 8 0 1 3 —H High Speed and High Efficiency DC-DC Converters Note Book PC .Portable Equipments Applications Unit in mm -Compact and thin package, and a small mounting area
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2SA1366
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3
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2SA1366
2SA1366
2SC3441.
-600mA
150MHz
SC-59
O-236
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2845 is a super mini package plastic seal type silicon epitaxial Unittmen OUTLINE DRAWING 2 . 1+ 0.2 type double diode.it is designed for general switching application.
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MC2845
MC2845
SC-70
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