GENERAL SEMICONDUCTOR SM 3b diode
Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200
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1N5221B
1N5263B
DO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
GENERAL SEMICONDUCTOR SM 3b diode
1n5224b fsc
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
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1N5221B
Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5263B f221b
Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200
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1N5221B
1N5263B
DO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5263B
f221b
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GENERAL SEMICONDUCTOR SM 3b diode
Abstract: 1N5985B 1N5988B 1N6020B 1N5990B 1N5993B 555 fairchild 1N5996B 1N5987B 1N5991B
Text: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C
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1N5985B
1N6025B
DO-35
1N5985B
1N5986B
1N5987B
1N5988B
1N5989B
1N5990B
1N5991B
GENERAL SEMICONDUCTOR SM 3b diode
1N5988B
1N6020B
1N5990B
1N5993B
555 fairchild
1N5996B
1N5987B
1N5991B
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1N5993B
Abstract: 1N6020B 1N6005B 1N5988B 1N5999B 1N6006B 1N5990B 1N5994B 1N5995B 1N5996B
Text: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C
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1N5985B
1N6025B
DO-35
1N5985B
1N5986B
1N5987B
1N5988B
1N5989B
1N5990B
1N5991B
1N5993B
1N6020B
1N6005B
1N5988B
1N5999B
1N6006B
1N5990B
1N5994B
1N5995B
1N5996B
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Untitled
Abstract: No abstract text available
Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
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1N5221B
1N5263B
DO-35
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Fabry-Perot-Laser-Diode
Abstract: A3 DIODE GENERAL SEMICONDUCTOR SM 3b diode
Text: Fiber Optics Low Power Triport-BIDI V23875-T1161-C1xx Optical Triplexer Component 1310 nm Tx / 1310 nm Digital Rx with 622 Mbit/s, 3.3 V TIA / 1555 nm Analog Video Rx Preliminary Data The V23875-T1161-C1xx is an optical triplexer component designed for full-duplex digital
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V23875-T1161-C1xx
Fabry-Perot-Laser-Diode
A3 DIODE
GENERAL SEMICONDUCTOR SM 3b diode
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MIL-STD-750 METHOD 2036 conditions E
Abstract: 1N6672 1N6672R 1N6673 1N6673R 1N6674 1N6674R
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. INCH-POUND MIL-PRF-19500/617D 17 April 2009 SUPERSEDING MIL-PRF-19500/617C 3 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,
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MIL-PRF-19500/617D
MIL-PRF-19500/617C
1N6672
1N6674
1N6672R
1N6674R,
MIL-PRF-19500.
MIL-STD-750 METHOD 2036 conditions E
1N6673
1N6673R
1N6674
1N6674R
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DIODE 1N3768-R
Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/297G
MIL-PRF-19500/297F
1N1184,
1N1186,
1N1188,
1N1190,
1N3766,
1N3768,
1N1184R,
1N1186R,
DIODE 1N3768-R
diode 1N1188
1N1184
1N1184R
1N1186
1N1186R
1N1188
1N1188R
1N1190
1N3766
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laser diode 1550 ns single mode
Abstract: GENERAL SEMICONDUCTOR SM 3b diode 1550 laser diode dfb laser diode 1550 Semiconductor Laser International 1550 communication laser diode dfb 1550 nm laser diode DFB Laser-Diode 1550 nm laser diode philips 075mW
Text: Philips Components c q f s i /d A -D E V E L O P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice. BURIED HETEROJUNCTION InGaAsP DFB LASER DIODE
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CQF61/D
QF61/D
BS4803:
BS4803.
I660nm
laser diode 1550 ns single mode
GENERAL SEMICONDUCTOR SM 3b diode
1550 laser diode
dfb laser diode 1550
Semiconductor Laser International
1550 communication laser diode
dfb 1550 nm laser diode
DFB Laser-Diode 1550 nm
laser diode philips
075mW
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QA-16
Abstract: No abstract text available
Text: SEMICONDUCTOR icoo Revised May 1999 TM FST3125 Quad Bus Switch General Description switch is OPEN and between th e tw o ports. The Fairchild Switch FST3125 provides fo u r high-speed C M OS TT L-com patible bus sw itches. The low on resis tance of the sw itch allows inputs to be connected to o ut
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FST3125
QA-16
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C857
Abstract: c858 C857B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BWT1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SO T -32 3/SC -7 0 which is
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BC856AWT1
BC857AWT1
BC858AWT1
BC856
BC857
BC858
OT-323/SC--
C857
c858
C857B
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c858
Abstract: C585A motorola c858 BCB57 C858A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC856ALT1,BLT 1 BC857ALT1 ,BLT1 BC858ALT1 ,BLT1, CLT1 M o to rola P referre d D e v ice s 2 M AXIM UM R A T IN G S EMIT1 Rating Collector-Em itter Voltage C o lle c to r-B a s e Voltage
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BC856ALT1
BC857ALT1
BC858ALT1
BC856
c858
C585A
motorola c858
BCB57
C858A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC74VHCT86AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT86AF, TC74VHCT86AFN, TC74VHCT86AFT QUAD EXCLUSIVE OR Note The JEDEC SOP (FN) is not available in Japan GATE The TC74VHCT86A is an advanced high speed CMOS QUAD
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TC74VHCT86AF/AFN/AFT
TC74VHCT86AF,
TC74VHCT86AFN,
TC74VHCT86AFT
TC74VHCT86A
14PIN
200mil
OP14-P-300-1
34TYP
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BC857ALT1
Abstract: BC858ALT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ran sisto rs BC856ALT1 ,BLT1 BC857ALT1 ,BLT1 BC858ALT1 ,BLT1, CLT1 PNP Silicon Motorola Preferred Devices MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit v CEO -65 -45 -3 0 V VCBO -80 -50 -30 V v EBO
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BC856ALT1
BC857ALT1
BC858ALT1
BC856
BC857
BC858
OT-23
O-236AB)
b3b72S5
BC857ALT1
BC858ALT1
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General Semiconductor diode marking sma
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A444
Text: PRODUCT INFORMATION 840nm 1A444 VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi tudinal mode, ensuring stable cou
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840nm
1A444
1-800-96MITEL
General Semiconductor diode marking sma
ON SEMICONDUCTOR 613
top marking 293
1A444
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SGRB000GXH26
Abstract: 4500V 900A GTO thyristor 4500V 4000A
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)
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SGRB000GXH26
SGR3000GXH26)
SGRB000GXH26
4500V 900A
GTO thyristor 4500V 4000A
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Untitled
Abstract: No abstract text available
Text: p P r iM 9 H 8 ! ! iQ Q Q Revised August 1999 EMICONDUCTGRTM 74F253 Dual 4-Input Multiplexer with 3-STATE Outputs General Description Features The 74F253 is a dual 4-input multiplexer with 3-STATE outputs. It can select two bits of data from four sources using
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74F253
74F253SC
74F253SJ
74F253PC
16-Lead
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications
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2SK2528-01
0D04b53
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857
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BC856ALT1/D
BC856ALT1
BC857ALT1,
BC858ALT1
BC856
BC857
BC858
-236A
OT-23
O-236AB)
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CD74FCT253
Abstract: No abstract text available
Text: H A F R F R IS S E M I C O N D U C T O R CD74FCT153T, CD74FCT253T, CD74FCT2153T, CD74FCT2253T High-Speed CMOS Dual 4-Input Multiplexer December 1996 Features Description • Advanced 0.8 micron CMOS Technology The C D74FCT153T, CD74FCT253T, CD74FCT2153T and
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CD74FCT153T,
CD74FCT253T,
CD74FCT2153T,
CD74FCT2253T
D74FCT153T,
CD74FCT2153T
CD74FCT2253T
CD74FCT153T
CD74FCT253
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tl271
Abstract: hbs 650 d150 fet tl27 54ACQ 102447
Text: June 1990 54ACQ/74ACQ153 • 54ACTQ/74ACTQ153 Quiet Series Dual 4-Input Multiplexer General Description Features The ’A C G /’ACTQ153 is a high-speed dual 4-input m ultiplex er w ith com m on se le ct inputs and individual enable inputs fo r each section. It can select tw o lines ot data from four
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54ACQ/74ACQ153
54ACTQ/74ACTQ153
ACTQ153
tl271
hbs 650
d150 fet
tl27
54ACQ
102447
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TC74VHC10F
Abstract: TC74VHC10FN TC74VHC10FT
Text: TO SHIBA TC74VHC10F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC10F, TC74VHC10FN, TC74VHC10FT TRIPLE 3 -INPUT NAND Note The JEDEC SOP (FN) is not available in Japan GATE The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
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TC74VHC1OF/FN/FT
TC74VHC10F,
TC74VHC10FN,
TC74VHC10FT
TC74VHC10
14PIN
200mil
OP14-P-3QO-1
TC74VHC10F
TC74VHC10FN
TC74VHC10FT
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Untitled
Abstract: No abstract text available
Text: V23806-A84-C1 SIEMENS Single Mode 155 MBd ATM 2x9Transceiver D im ensions in m m inches (11.5 max) .453 max. V ie w Z (Lead cross section and stan doff size) (0.73+0.1 ) .028±.004 PC board thickness (2) .080 (1.5+0.1) .06+.004 _OpticaL Centerline rr L
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V23806-A84-C1
r25T1
D-13623,
de/Semiconductor/products/37/376
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74ALS03
Abstract: TC74VHC00 TC74VHC03F TC74VHC03FN TC74VHC03FT
Text: TOSHIBA TC74VHC03F/FN/FT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74VHC03F, TC74VHC03FN, TC74VHC03FT QUAD 2 -INPUT NAND GATE OPEN DRAIN The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
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TC74VH
TC74VHC03F,
TC74VHC03FN,
TC74VHC03FT
TC74VHC03
TC74VHC00.
14PIN
200mil
74ALS03
TC74VHC00
TC74VHC03F
TC74VHC03FN
TC74VHC03FT
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