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    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Search Results

    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL TRANSISTOR HFE 210 CLASSIFICATION MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB709A

    Abstract: 2SB709AR 2sb709a-q 2SB709A-R 2SD601A SOT-23-hg
    Text: 2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 For general amplification Complementary of the 2SD601A A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		2SB709A OT-23 2SD601A 2SB709A-Q 2SB709A-R 2SB709A-S 18ollector 21-Jan-2011 200MHz 2SB709A 2SB709AR 2sb709a-q 2SB709A-R 2SD601A SOT-23-hg PDF

    2SD1819A

    Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
    Text: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A


    Original     		2SD1819A OT-323 2SB1218A 2SD1819A-Q 2SD1819A-R 2SD1819A-S 24-Feb-2011 100mA 100mA, 200MHz 2SD1819A transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-S PDF

    smd transistor bq

    Abstract: marking BQ sot-23 2PB709AQ 2PB709AR ja TRANSISTOR smd bq smd transistor smd transistor marking bs MARKING SMD PNP TRANSISTOR smd transistor pnp bq SMD TRANSISTOR MARKING BR
    Text: Transistors IC SMD Type PNP General Purpose Transistor 2PB709A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		2PB709A OT-23 2PB709AR 2PB709AQ 2PB709AS smd transistor bq marking BQ sot-23 2PB709AQ 2PB709AR ja TRANSISTOR smd bq smd transistor smd transistor marking bs MARKING SMD PNP TRANSISTOR smd transistor pnp bq SMD TRANSISTOR MARKING BR PDF

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and


    Original     		2SB1218A 2SD1819A 100Hz 10kHz 270Hz 2SB1218A 2SD1819A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification


    Original     		OT-323 2PD601AW 100mA 100mA, 2PD601AQW 100MHz 2PD601ARW 2PD601ASW PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification


    Original     		OT-323 2SD1819A 2SB1218A 100mA, 200MHz PDF

    smd transistor marking n9

    Abstract: smd transistor marking n5 2PB709ARW smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5
    Text: Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		2PB709AW 2PB709AQW 2PB709ARW 2PB709ASW 2PB709ARW smd transistor marking n9 smd transistor marking n5 smd transistor n9 02 N5 MARKING SMD PNP TRANSISTOR 2PB709AQW 2PB709ASW 2PB709AW N5 smd transistor N5 PDF

    smd transistor 6d

    Abstract: SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW
    Text: Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		2PD601AW 2PD601AQW 2PD601ARW 2PD601ASW 2PD601ARW smd transistor 6d SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW PDF

    smd transistor marking K7

    Abstract: BCV71 BCV72
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCV71,BCV72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low voltage max. 60 V . 0.4 3 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCV71 BCV72 OT-23 BCV71 smd transistor marking K7 BCV72 PDF

    transistor smd K2

    Abstract: transistor smd marking k2 k2 smd transistor smd transistor k2 BCW71 BCW72 SMD TRANSISTOR MARKING k2
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


    Original     		BCW71 BCW72 OT-23 BCW71 transistor smd K2 transistor smd marking k2 k2 smd transistor smd transistor k2 BCW72 SMD TRANSISTOR MARKING k2 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-323 2SB1218A 2SD1819A -100mA, -10mA 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-323 2SB1218A 2SD1819A PDF

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		2SD1819A 2SB1218A 2SB1218A 2SD1819A PDF

    smd transistor marking D3

    Abstract: BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 BCW31 BCW32 smd TRANSISTOR marking ku
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		BCW31 BCW32 BCW33 OT-23 BCW32 BCW31 smd transistor marking D3 BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 smd TRANSISTOR marking ku PDF

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and


    Original     		2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A PDF

    2SD1819AS

    Abstract: 2SB1218A 2SD1819A
    Text: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A • Features 3 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		2SB1218A 2SD1819A 2SD1819AS 2SB1218A 2SD1819A PDF

    2SC5800

    Abstract: NESG2046M33 NEC JAPAN IC
    Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


    Original     		PA869TD NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 NEC JAPAN IC PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		2SD2216 2SB1462 PDF

    2SC5435

    Abstract: 2SC5800
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    transistor MAR 543

    Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
    Text: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		2SD0601A 2SD601A) 2SB0709A 2SB709A) transistor MAR 543 2SB709A 2SD0601A 2SD601A 2SB0709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and


    Original     		2SD1304 PDF

    2SD1280

    Abstract: No abstract text available
    Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		2SD1280 2SD1280 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF