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    GEO06968 Search Results

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    Phototransistor SFH

    Abstract: GEO06968 GEO06969
    Text: 2.05 R 1.95 SFH 4590 SFH 4595 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter (3.2) 0.0.1 3.7 3.3 14.7 13.1 5.8 5.4 2.54 mm spacing GEO06968 SFH 4590 4.5 3.9 7.7 7.1


    Original     		GEO06968 GEO06969 OHF00362 OHF00265 OHF00361 Phototransistor SFH GEO06968 GEO06969 PDF

    p5050

    Abstract: GEO06968 GEO06969 Q62702-P5031 Q62702-P5032 Q62702-P5050 Q62702-P5051 FA 8 600
    Text: 2.05 R 1.95 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 SFH 3500/FA SFH 3505/FA 2.7 2.4 NPN Silizium Fototransistor Silicon NPN Phototransistor (3.2) -0.1.0.1 3.7 3.3 14.7 13.1 6.0 5.4 2.54 mm spacing GEO06968 SFH 3500/FA 4.5 3.9 7.7 7.1


    Original     		3500/FA 3505/FA GEO06968 GEO06969 OHF00346 OHF00384 p5050 GEO06968 GEO06969 Q62702-P5031 Q62702-P5032 Q62702-P5050 Q62702-P5051 FA 8 600 PDF

    d 4515

    Abstract: 4510 applications 4510 Q62702-P1798 GEO06968 GEO06969 OHRD1938 Q62702-P1821 tp 147
    Text: 2.05 R 1.95 SFH 4510 SFH 4515 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm) (3.2) 0.0.1 3.7 3.3 14.7 13.1 5.8 5.4 2.54 mm spacing GEO06968 SFH 4510 4.5 3.9 7.7 7.1 Cathode


    Original     		GEO06968 GEO06969 liquid10 OHR01554 OHR00860 OHF00265 d 4515 4510 applications 4510 Q62702-P1798 GEO06968 GEO06969 OHRD1938 Q62702-P1821 tp 147 PDF

    d 4515

    Abstract: A 4510 D transistor d 4515 4510 4510 datasheet applications 4510 fototransistor led Q62702-P1798 GEO06968 GEO06969
    Text: 2.05 R 1.95 SFH 4510 SFH 4515 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm) (3.2) -0.1.0.1 3.7 3.3 14.7 13.1 6.0 5.4 2.54 mm spacing GEO06968 SFH 4510 4.5 3.9 7.7 7.1


    Original     		GEO06968 GEO06969 OHR01554 OHR00860 OHF00265 d 4515 A 4510 D transistor d 4515 4510 4510 datasheet applications 4510 fototransistor led Q62702-P1798 GEO06968 GEO06969 PDF

    p5050

    Abstract: LED "1060 nm" "MA 3500" IC emitter "1060 nm" fototransistor led phototransistor 500-600 nm GEO06968 GEO06969 Q62702-P5031 Q62702-P5032
    Text: NPN Silizium Fototransistor Silicon NPN Phototransistor SFH 3500/FA SFH 3505/FA 2.05 R 1.95 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 Vorläufige Daten / Preliminary Data (3.2) -0.1.0.1 3.7 3.3 14.7 13.1 6.0 5.4 2.54 mm spacing


    Original     		3500/FA 3505/FA GEO06968 GEO06969 OHF00346 OHF00384 OHF00349 p5050 LED "1060 nm" "MA 3500" IC emitter "1060 nm" fototransistor led phototransistor 500-600 nm GEO06968 GEO06969 Q62702-P5031 Q62702-P5032 PDF

    d 4515

    Abstract: applications 4510 4510 GEO06968 GEO06969 OHRD1938 Q62702-P1798 Q62702-P1821 4510 chip
    Text: GaAs-IR-Lumineszenzdioden 950 nm in SMR Gehäuse GaAs Infrared Emitters (950 nm) in SMR Package SFH 4510 SFH 4515 SFH 4510 SFH 4515 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • SMR (Surface Mount Radial) Gehäuse • Für Oberflächenmontage geeignet


    Original     		GEO06968 GEO06969 d 4515 applications 4510 4510 GEO06968 GEO06969 OHRD1938 Q62702-P1798 Q62702-P1821 4510 chip PDF

    opto 2505

    Abstract: 2505 R 2505 Q62702-P5034 Q62701-P5029 Q62701-P5030 Q62702-P1795 SFH2505
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit in SMR Gehäuse Silicon PIN Photodiode with Very Short Switching Time in SMR Package SFH 2500/FA SFH 2505/FA SFH 2500 SFH 2500FA SFH 2505 SFH 2505FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich


    Original     		2500/FA 2505/FA 2500FA 2505FA FA/2505 2500/FA, GEO06968 opto 2505 2505 R 2505 Q62702-P5034 Q62701-P5029 Q62701-P5030 Q62702-P1795 SFH2505 PDF

    Q62702-P5031

    Abstract: Q62702-P5050 Q62702-P5205 Q62702-P5206 Q62702-P5207 FA 8 600 SFH 340
    Text: NPN-Silizium-Fototransistor in SMR Gehäuse Silicon NPN Phototransistor in SMR Package SFH 3500/FA SFH 3505/FA SFH 3500 SFH 3500FA SFH 3505 SFH 3505FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1060 nm SFH 3500/3505 und


    Original     		3500/FA 3505/FA 3500FA 3505FA FA/3505 3500/FA) 3505/FA) 3500/FA, Q62702-P5031 Q62702-P5050 Q62702-P5205 Q62702-P5206 Q62702-P5207 FA 8 600 SFH 340 PDF

    2505

    Abstract: GEO06968 GEO06969 Q62701-P5029 Q62701-P5030 Q62702-P1795 Q62702-P5034 R 2505
    Text: SFH 2500/FA SFH 2505/FA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 2500/FA SFH 2505/FA 2.05 R 1.95 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 Vorläufige Daten / Preliminary Data


    Original     		2500/FA 2505/FA GEO06968 GEO06969 OHF00302 OHF00392 2505 GEO06968 GEO06969 Q62701-P5029 Q62701-P5030 Q62702-P1795 Q62702-P5034 R 2505 PDF

    R 2505

    Abstract: FA 600 GEO06968 GEO06969 Q62701-P5029 Q62701-P5030 Q62702-P1795 Q62702-P5034
    Text: SFH 2500/FA SFH 2505/FA 2.05 R 1.95 SFH 2500/FA SFH 2505/FA 3.2 (R 2.8) 4.8 4.4 2.7 2.3 Chip position 4.5 7.5 3.9 5.5 2.7 2.4 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time -0.1.0.1 (3.2) 14.7 13.1


    Original     		2500/FA 2505/FA GEO06968 GEO06969 OHF00302 OHF00392 R 2505 FA 600 GEO06968 GEO06969 Q62701-P5029 Q62701-P5030 Q62702-P1795 Q62702-P5034 PDF