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    GEP 45 DIODE Search Results

    GEP 45 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GEP 45 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


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    PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    gep 45 diode

    Abstract: AD29 AD30 MX98723UC
    Text: ADVANCED INFORMATION MX98723UC PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card


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    PDF MX98723UC 32-bit E9935 T4638501 32CAX gep 45 diode AD29 AD30 MX98723UC

    diode GEP 86 A

    Abstract: scr bt 106 AD29 AD30 MX98723 CSR8 GEP diode
    Text: ADVANCED INFORMATION MX98723 PCI/CARDBUS FAST ETHERNET CONTROLLER 1.0 Feature • A 32-bit CardBus/PCI fast Ethernet Controller integrates 10/100 Base-T MAC, NWAY, MII Interface and 10 Base-T transceiver • Compliant to CardBus specification of the PC Card


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    PDF MX98723 32-bit PM0487 diode GEP 86 A scr bt 106 AD29 AD30 MX98723 CSR8 GEP diode

    bu 450 GDF

    Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


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    PDF C3B04 bu 450 GDF SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714

    bu 450 GDF

    Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


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    PDF C3B04 bu 450 GDF diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A

    GEZ DIODES

    Abstract: GEZ 63 DIODES GEZ 304 DIODES
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


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    PDF E135015 RS-481-A DO214AB UL94V-0 5SMCJ160 5SMCJ160A 5SMCJ170 5SMCJ170A GEZ DIODES GEZ 63 DIODES GEZ 304 DIODES

    GEZ DIODES

    Abstract: GHR TVS GEZ 304 DIODES marking GFQ marking BGG tvs
    Text: TVS Diodes 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • RoHS Compliance designated by suffix “F” • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction


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    PDF E135015 RS-481-A DO214AB UL94V-0 MIL-STD-750 GEZ DIODES GHR TVS GEZ 304 DIODES marking GFQ marking BGG tvs

    GEZ DIODES

    Abstract: bgy 44
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


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    PDF E135015 RS-481-A DO214AB UL94V-0 MIL-STD-750 GEZ DIODES bgy 44

    BEZ DIODES

    Abstract: marking GFQ marking Bdy
    Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor


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    PDF E135015 RS-481-A BEZ DIODES marking GFQ marking Bdy

    general semiconductor marking code GFX

    Abstract: GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMCG188CA DO-215AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 general semiconductor marking code GFX GENERAL SEMICONDUCTOR MARKING bfm SMCG188A GENERAL SEMICONDUCTOR MARKING gfr E1367 GDM 3-17 BFM LF gfx 83 SMCG14A general semiconductor marking code GER

    GENERAL SEMICONDUCTOR MARKING bfm

    Abstract: general semiconductor marking code GFX 9AT1 transzorb marking code GEM BFR 90
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


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    PDF SMCG188CA J-STD-020, AEC-Q101 DO-215AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GENERAL SEMICONDUCTOR MARKING bfm general semiconductor marking code GFX 9AT1 transzorb marking code GEM BFR 90

    GENERAL SEMICONDUCTOR MARKING bfm

    Abstract: GGG 92 VISHAY MAKE BFT transzorb marking code GEM
    Text: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


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    PDF SMCJ188CA J-STD-020, AEC-Q101 DO-214AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GENERAL SEMICONDUCTOR MARKING bfm GGG 92 VISHAY MAKE BFT transzorb marking code GEM

    GGG 92

    Abstract: general semiconductor marking code GER
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMCG188CA DO-215AB J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GGG 92 general semiconductor marking code GER

    GEZ 44 A diode

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from


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    PDF E230531 DO-214AB 16mm/7â RS-481 GEZ 44 A diode

    Untitled

    Abstract: No abstract text available
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


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    PDF SMCG188CA J-STD-020, AEC-Q101 DO-215AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Diode GFK

    Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


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    PDF CD214C DO-214AB Diode GFK DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE

    Diode GFK

    Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


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    PDF DO-214AB RS-481-A DO-214AB) Diode GFK GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor

    GFX DIODE

    Abstract: Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series


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    PDF CD214C DO-214AB GFX DIODE Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMCG188CA DO-215AB J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SMCG5.0A thru SMCG188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional


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    PDF SMCG188CA J-STD-020, AEC-Q101 DO-215AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    10N40F1D

    Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
    Text: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS


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    PDF HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND 33 h SECTOR a r bflE D • M3G2271 0050271 201 ■ ¡ H A S HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 12 Amp, 600 Volt • Latch Free Operation


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    PDF M3G2271 HGTG12N60D1D O-247 500ns

    5SMC22A

    Abstract: 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A MOTOROLA 727 36A ISMC5.0AT3 5SMC24AT3 GEZ DIODES 5SMC39A
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b75SS 00fl53t,b 45T SECTION 4.1.4 DATA SHEETS TRANSIENT VOLTAGE SUPPRESSORS — continued Section 4.1.4.2 Surface Mounted — continued SECTION 4.1.4.2.3 1500 WATT PEAK POWER MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS


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    PDF b3b75SS 00fl53t 1SMC78AT3 5SMC91AT3 L3b7255 00fl53b7 5SMC68AT3 5SMC75AT3 5SMC82AT3 5SMC22A 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A MOTOROLA 727 36A ISMC5.0AT3 5SMC24AT3 GEZ DIODES 5SMC39A