5SBB 20T1500
Abstract: 5SBB 20T1200 5SBD 05T1300 20T1800 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200 20T1500
Text: B R E A K O V E R _ D I O D E S Diffused pnpn structure fired by over voltages. Effective protection of thyristors against transients. Thyristor protection by emergency firing. - Diffundierte pnpn-Struktur, wird durch Überspannungen gezündet.
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20T1500
20T1600
20T1700
20T1800
20T1900
20T2000
20T2100
20T2200
20T2300
20T2400
5SBB 20T1500
5SBB 20T1200
5SBD 05T1300
5SBD 05T1400
5SBA
20T0800
20T0500
5SBB 20T2200
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GEZ DIODE
Abstract: "Temperature Switch" transistor 152 M
Text: Presspacks Stacks Outlines Accessories Explanations 60 K 0.024 W G = 3 kg M12 for W1C-circuits K 0.024 W G = 3 kg for B- and M-circuits ohne Rohrnippel gez. ø12 27 26 80 185 150 14 26 14 2 2) 3) 17 30° Temperature Switch 65 17 1 6.5 4.2 17 2) 152 5 l=*)
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
"Temperature Switch"
2kd20
Diode KD 202
KD 310
Diode KD 6 17
gez 8.5 diode
54kd
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GEZ DIODE
Abstract: 4-KD20 GEZ 26 42kD
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
42kD
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Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
Gex DIODE
Gex 66 diode
GEX 51 DIODE
GEX 54 DIODE
marking code KE diode
diode marking GDE 38
SMJ30
diode Marking Code lm tvs
diode GEP 86 A
marking diode KE
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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kuka
Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Text: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5
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kuka-2006-de-inhalt
M24x1
150mm
120mm
kuka
kd202
GEZ DIODE
D5014
KA206
KA204
THY H 75 B 80
GEZ 44 A diode
T5726
KE02
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bfm 2 TERMINAL DIODE
Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
SMA marking code LG
sma marking code kn
marking sm DO-214AA
lg73
J15A
marking sm
marking SM 98
sma MARKING mp
BQ 714
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bu 450 GDF
Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
diode gde 78
J15A
GEZ DIODE
SMA marking code LG
GGG 92
marking sm
J11A
J14A
J16A
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GEZ DIODE
Abstract: E10 M DIODE
Text: * typical luminous spectrum Wavelength [nm| Colour coordinates lF = 20mA; TA = 25°C x = 0,31 ± 0,06 y = 0,32 ± 0,08 Lampensockel nach DIN EN 60061-1: E10 Lamp base in accordance to DIN EN 60061-1 : E10 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.
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1860115W3
1860115W3D
D-67098
T10x25
E10/13
1860115XXX
GEZ DIODE
E10 M DIODE
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Diode GFK
Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
Diode GFK
GFX DIODE
BJE 80 diode
Diode BFM
bfm 2 TERMINAL DIODE
GGT DIODE
Diode GEG
Diode GFK 42
bem diode
GEZ DIODES
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EBT BA9S LED
Abstract: BA9S LED EBT GEZ DIODE led green lamp 6VAC
Text: 0 10 max * typical luminous spectrum Polycarbonat weiß / polycarbonate white Polycarbonat farbig / polycarbonate coloured W avelength nm Colour coordinates (lF = 20mA; TA = 25°C) x = 0,31 ±0,06 y = 0,32 ±0,08 Lampensockel nach DIN EN 60061-1: BA9s Lamp base in accordance to DIN EN 60061-1: BA9s
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186001nn
D-67098
T10x25
1860015XXX
EBT BA9S LED
BA9S LED EBT
GEZ DIODE
led green lamp 6VAC
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GEK DIODES
Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
GEK DIODES
Diode GFK
Diode BFX 514
GEZ DIODES
BDP 282
DIODE BFM
DIODE BFT marking code
GGP DIODE
MARKING GEK
GFX DIODE
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marking code BFK
Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
Text: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction
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DO-214AB
marking code BFK
GFX DIODE
Diode GFK
DIODE BJE
gfp 35
GFM 78
GGT DIODE ON
on 440 gex diode
BFR 30 transistor
GFK 77
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Untitled
Abstract: No abstract text available
Text: Lampensockel nach DIN EN 60061-1: E10 Lamp base In accordance to DIN EN 60061-1: E10 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA - 25°C. Bestell-Nr.
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1862135W3
1862135W3D
1862145W3
1862145W3D
D-67098
T10x25
E10/13
18621X5XXX
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dc optronic gmbh
Abstract: No abstract text available
Text: * typical luminous spectrum Wavelength [nm| Colour coordinates lF = 20mA; TA = 25°C Lampensockel nach DIN EN 60061-1: BA9s Lamp base in accordance to DIN EN 60061-1: BA9s x = 0,31 ±0,06 y = 0,32 ±0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.
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1862035W3
1862035W3D
1862045W3
1862045W3D
D-67098
T10x25
18620X5XXX
dc optronic gmbh
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GEZ DIODES
Abstract: GEZ 63 DIODES GEZ 304 DIODES
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
5SMCJ160
5SMCJ160A
5SMCJ170
5SMCJ170A
GEZ DIODES
GEZ 63 DIODES
GEZ 304 DIODES
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GEZ DIODES
Abstract: bgy 44
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
DO214AB
UL94V-0
MIL-STD-750
GEZ DIODES
bgy 44
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BEZ DIODES
Abstract: marking GFQ marking Bdy
Text: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor
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E135015
RS-481-A
BEZ DIODES
marking GFQ
marking Bdy
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MCD330
Abstract: No abstract text available
Text: 0 6,1 max. Polycarbonat farbig / polycarbonate coloured Lampensockel nach DIN EN 60061-1: S5,7s Lamp base in accordance to DIN EN 60061-1: S5,7s Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA = 25°C.
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1512125UR3
1512125UG3
1512125UY3
1512125B3
1512125W3
1512125W3D
1512135UR3
1512135UG3
1512135UY3
1512135B3
MCD330
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Untitled
Abstract: No abstract text available
Text: 0 6,1 max. Polycarbonat farbig / polycarbonate coloured * typical luminous spectrum XU LO co Polycarbonat weiß / polycarbonate white & Wavelength [nm] Colour coordinates lF = 20mA; TA = 25°C Lampensockel nach DIN EN 60061-1 : W2 x 4,6d Lamp base in accordance to DIN EN 60061 -1 : W2 x 4,6d
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1511A25UR3
1511A25UG3
1511A25UY3
1511A25B3
1511A25W3
1511A25W3D
1511A35UR3
1511A35UG3
1511A35UY3
1511A35B3
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GEZ DIODE
Abstract: No abstract text available
Text: typical luminous spectrum 0 3,8 A - Polycarbonat farbig / polycarbonate coloured / lF = 20mA LO "J 0 0,5 ! \ \V - / m A co T co ! T a = 25°C - CO coi. 600 Wavelength 2,54 [nm] Colour coordinates lF = 20mA; TA = 25°C x = 0,31 ± 0,06 yX= 0,32 ± 0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Tu = 25°C gemessen.
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1501525W3
1501525W3D
1501535W3
1501535W3D
1501545W3
1501545W3D
15015X5XXX
GEZ DIODE
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GEZ DIODE
Abstract: No abstract text available
Text: Elektr. und optische Daten sind bei einer Umgebungstemperatur von Tu = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA = 25°C. Bestell-Nr. Part No. Farbe Colour Spannung Voltage Strom Current Lichtstarke Lumi. Intensity
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1505125UR3
1505125UG3
1505125UY3
1505125B3
1505125W3
1505125W3D
1505135UR3
1505135UG3
1505135UY3
1505135B3
GEZ DIODE
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