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    GK 74 TRANSISTOR Search Results

    GK 74 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    GK 74 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    h11cx

    Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 IN5060 diode GK 74 transistor PDF

    h11cx

    Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins PDF

    GK 243

    Abstract: MPEH
    Text: Optotsolator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN WAX MIN MAX T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e s c o u p le d w ith lig h t a ctiv ate d silic o n


    OCR Scan     		H11C4, H11C5, H11C6 GK 243 MPEH PDF

    distance measure ultrasonic transducer

    Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor
    Text: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52


    Original     		NL-3800 CH-8330 distance measure ultrasonic transducer ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor PDF

    h11c4

    Abstract: H11C3
    Text: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 a DESCRIPTION The H11C series consists of a gallium -arsenide infrared em itting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package.


    OCR Scan     		H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 H11C1, H11C2, H11C3) H11C4, H11C3 PDF

    4n4001

    Abstract: 4N4U 4N40 4N39 GE SCR 1000
    Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


    OCR Scan     		3fl750fll 220VAC the4N40 4n4001 4N4U 4N40 4N39 GE SCR 1000 PDF

    H11C2-H11C3

    Abstract: Opto-isolator 50V-RGK
    Text: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also


    OCR Scan     		H11C1, H11C2, H11C3 H11C3 H11C2-H11C3 Opto-isolator 50V-RGK PDF

    h13b1

    Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 h13b1 ins060 H13A2 4N38 PDF

    H11C2 equivalent

    Abstract: HIIC4 sci46d 8T20 rgk 13 st1602 H11C H11C2 220vac relay solid state relay 220v 10a
    Text: PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package. FEATURES & APPLICATIONS


    OCR Scan     		H11C1 H11C2 H11C3 H11C4 H11C5H11C6 H11C1, H11C2, H11C3) H11C4, H11C5, H11C2 equivalent HIIC4 sci46d 8T20 rgk 13 st1602 H11C 220vac relay solid state relay 220v 10a PDF

    s41 hall sensor

    Abstract: Russian diode Transistor ML614S IC6001 FP99
    Text: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM


    Original     		DSC0703019CE s41 hall sensor Russian diode Transistor ML614S IC6001 FP99 PDF

    GE SCR 1000

    Abstract: H11C1 10KC2 10KI1 10KO H11C2 H11C3 JK30 H11C1 GE
    Text: G E SOLI» STÄTE 01 D E | 3 fl 7 5 0 f l l □ D I T 714 1 optoelectronic Specifications . T - 4 / - S “7 Photon Coupled Isolator H11C1,H11C2,H11C3 Ga As Infrared Emitting Diode & Light Activated SCR - M ILLIM ETERS seatino MIN. A T he G E Solid State H 11C 1, H11C2 and H 1 1C3 are gallium arsenide,


    OCR Scan     		3fl750fll lci714 H11C1 H11C2 H11C3 H11C1, H11C3 GE SCR 1000 10KC2 10KI1 10KO JK30 H11C1 GE PDF

    photo interrupter module

    Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 PDF

    photo interrupter module h13a1

    Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 PDF

    Untitled

    Abstract: No abstract text available
    Text: H V 7 1 6 1 S P A 1 C M O S Im a g e S e n s o r W it h Im a g e S ig n a l P r o c e s s in g Confidential C M O S Im a g e S e n s o r w it h I m a g e S ig n a l P r o c e s s in g H V 7 1 6 1 S P A 1 1 .3 M e g a P ix e l C IS 1 5 fp s @ M C L K 2 1 M H z , P L L 2 x


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    sci46d

    Abstract: No abstract text available
    Text: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED


    OCR Scan     		4N394N40 E90700 ST1603 ST1602 ST2119 ST2120 sci46d PDF

    Untitled

    Abstract: No abstract text available
    Text: European “Pro Electron" Registered T y p e s _ CNY30, CNY34 Optoisofator Ga As Infrared Emitting Diode and Light Activated SCR SVMBOL C H K INFRARED EM ITTIN G DIODE Power Dissipation -55°C to 50°C *100 Forward Current (Continuous) 60 (-55°C to 50°C)


    OCR Scan     		CNY30, CNY34 CXY34 CNY34 100/i. 220VA CNY30 PDF

    13001 TRANSISTOR

    Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
    Text: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


    OCR Scan     		3fl750Ã T-V/-77 CNY30-CNY34 CNY30 CNY34 220VAC 13001 TRANSISTOR CNY30-CNY34 GE SCR 1000 1000C AN006 INS080I4 PDF

    4N39T

    Abstract: d4n40
    Text: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES M L L IM E T E R S M IN MAX. M IN 8 38 S' S3 ? 62 PEF The 4N 39 an d 4N 40 co n sist of a g allium arsenide, infrared e m ittin g diode cou p led w ith a lig h t activ ated silico n c o n tro lled 5EiT,ri


    OCR Scan     		PDF

    MOC3000R

    Abstract: IC MR5060 MOC3000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC3000 MOC3001 6-Pin DIP Optoisolators SCR Output T h e se d e v ic e s co n sist o f galliu m -arsen id e infrared em itting d iod e optically co up led to a p ho to se n sitive silic on controlled rectifier SCR . T h e y are d e sig n e d for ap p lications


    OCR Scan     		E54915 IEC380/VDE0806, IEC435/VDE0805, MOC3000, MOC3001 30A-02 MOC3000R IC MR5060 MOC3000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19682 Optoelectronic S p ecificatio n s-r- y / - ? 7 HARRIS SEMICOND SECTOR 37E D 4302271 0027144 T B IH A S s w a o i 1- Photon Coupled Isolator 4 N 3 9 ,4 N 4 0 A a c E F H J K M N P R S Ga As Infrared E m itting D iode & L ight A ctivated SCR


    OCR Scan     		92CS-42662 92CS-429S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SO LID STATE 01E 19718 Optoelectronic Specifications- • 37E D HARRIS SEtllCOND SECTOR 4305271 0027100 3 M HAS Photon Coupled Isolator H11C4 »H11C5, H11C6 V /' 1 IN C H ES M IL L IM E T E R S *• SY M 30L' M IN . M A X . • M IN.


    OCR Scan     		H11C4 H11C5, H11C6 H11C4, 92CS-42662 92CS-429S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: European “Pro Electron” Registered T y p e s _ CNY30, CNY34 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T h e CNY30 a n d CNY34 consist o f a gallium arsen id e, in fra re d em itting d io d e coupled with a light activated silicon


    OCR Scan     		CNY30, CNY34 CNY30 CNY34 PDF

    led phototransistor pair

    Abstract: toco Phototransistor til 81
    Text: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor


    OCR Scan     		E2P0007-27-31 OCM22Q led phototransistor pair toco Phototransistor til 81 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 2 Thermally Conductive Interface Materials for Cooling Electronic Assemblies Sil-Pad S E L E C T I O N G U I D E SPDG_Cover_0511 v7.qxp 6/22/2011 12:25 PM Page 3 June 2011 All statements, technical information and recommendations herein are based on tests we believe to be reliable, and THE


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