SFE-5.5
Abstract: IF VIDEO DEMODULATOR subwoofer motherboard free download toko coil 7k BSD tuner saw filter if video TDA audio power amplifier SDIP28 SDIP30 TDA4462
Text: TDA4462-B IF 1-Chip Processor Video IF and Mono FM Sound IF Description and FM sound IF signals (mono FM intercarrier sound). With 5 V supply voltage, the TDA4462 is suitable for TV, VCR and multimedia applications. Features D 5 V supply voltage; low power consumption
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TDA4462-B
TDA4462
D-74025
28-Jan-97
SFE-5.5
IF VIDEO DEMODULATOR
subwoofer motherboard free download
toko coil 7k
BSD tuner
saw filter if video
TDA audio power amplifier
SDIP28
SDIP30
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Untitled
Abstract: No abstract text available
Text: 2SK2206 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter, Motor control
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2SK2206
O-220CFM
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Untitled
Abstract: No abstract text available
Text: 2SK2008 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control
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2SK2008
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Untitled
Abstract: No abstract text available
Text: 2SK1620 L , 2SK1620(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
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2SK1620
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Abstract: No abstract text available
Text: 2SK2097 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter.
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2SK2097
O-220CFM
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Untitled
Abstract: No abstract text available
Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1618
2SK1618Ã
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Abstract: No abstract text available
Text: 2SK1528 L , 2SK1528(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1528
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Untitled
Abstract: No abstract text available
Text: 2SK1808 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
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2SK1808
O-220FM
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Untitled
Abstract: No abstract text available
Text: 2SK1869 L , 2SK1869(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter
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2SK1869
2SK1869Ã
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Untitled
Abstract: No abstract text available
Text: 2SK1950 L , 2SK1950(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC - DC converter
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2SK1950
2SK1950Ã
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Untitled
Abstract: No abstract text available
Text: 2SK2424 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2424
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Abstract: No abstract text available
Text: 2SK1622 L , 2SK1622(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1622
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Abstract: No abstract text available
Text: 2SK2431 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2431
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Abstract: No abstract text available
Text: 2SK1626, 2SK1627 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
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2SK1626,
2SK1627
2SK1626
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Abstract: No abstract text available
Text: 2SK1807 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
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2SK1807
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Abstract: No abstract text available
Text: 2SK2590 Silicon N-Channel MOS FET HITACHI Preliminary Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control
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2SK2590
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Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange
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2SK2568
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Untitled
Abstract: No abstract text available
Text: 2SK2426 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2426
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Abstract: No abstract text available
Text: 2SK1623 L , 2SK1623(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1623
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Abstract: No abstract text available
Text: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
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2SK1775
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Abstract: No abstract text available
Text: 2SK2425 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline
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2SK2425
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Abstract: No abstract text available
Text: 2SK1859 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • No secondary breakdown • Suitable for Switching regulator Outline 2SK1859 Absolute Maximum Ratings Ta = 25 °C
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2SK1859
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Untitled
Abstract: No abstract text available
Text: 2SK1621 L , 2SK1621(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
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2SK1621
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Abstract: No abstract text available
Text: 2SK2144 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline
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2SK2144
O-220CFM
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