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    TE Connectivity CRGP1210F33R

    RES 33 OHM 1% 3/4W 1210
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    DigiKey CRGP1210F33R Cut Tape 98,455 1
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    TE Connectivity CRGP1210F220R

    RES 220 OHM 1% 3/4W 1210
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    TE Connectivity CRGP1206F1K8

    RES 1.8K OHM 1% 1/2W 1206
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    TE Connectivity CRGP1206F18K

    RES 18K OHM 1% 1/2W 1206
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    DigiKey CRGP1206F18K Digi-Reel 39,253 1
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    TE Connectivity CRGP1210F1M0

    RES 1M OHM 1% 3/4W 1210
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    DigiKey CRGP1210F1M0 Cut Tape 34,321 1
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    CRGP1210F1M0 Digi-Reel 34,321 1
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    GP12 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GP120 Halbleiterwerke der DDR Germanium Diodes and Transistors Scan PDF
    GP1200 G-Plus 2.4 GHz Power Amplifier Original PDF
    GP1200 Diotec High Voltage Diode Rectifiers Scan PDF
    GP1200 Diotec HIGH VOLTAGE DIODE RECTIFIERS Scan PDF
    GP1200ESM33 Dynex High Reliability Single Switch IGBT Module Original PDF
    GP1200FSM18 Dynex Hi-Reliability Single Switch IGBT Module Original PDF
    GP1200FSS18 Dynex Single Switch IGBT Module Original PDF
    GP1201FSS18 Dynex Single Switch Low V IGBT Module Original PDF
    GP1204H1F Fiber Optic Center LTF Armored Cable Original PDF
    GP1204H1M Fiber Optic Center LTR Loose Tube Riser Cable Original PDF
    GP1204M1A Fiber Optic Center LTM Standard Outdoor Cable Original PDF
    GP1204M1X Fiber Optic Center LTR Chemical Resistant Cable Original PDF
    GP121 Halbleiterwerke der DDR Germanium Diodes and Transistors Scan PDF
    GP122 Cornell Dubilier Capacitor: 22nF: 1K: Y5U: 20%: 5.9: RDL Original PDF
    GP122 Halbleiterwerke der DDR Germanium Diodes and Transistors Scan PDF
    GP1250 Diotec HIGH VOLTAGE DIODE RECTIFIER Original PDF
    GP1250 Diotec High Voltage Diode Rectifiers Scan PDF
    GP1250 Diotec HIGH VOLTAGE DIODE RECTIFIERS Scan PDF
    GP-12B PerkinElmer Optoelectronics Triggered Spark Gaps Original PDF
    GP12MABE C&K Components Pushbutton Switches, Switches, SWITCH PUSH SPDT 0.4VA 20V Original PDF

    GP12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GP1200

    Abstract: gctl
    Text: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the


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    GP1200 GP1200 23dBm 18nH/0402 nH/0402 gctl PDF

    ether H5

    Abstract: futaba vfd 9 GP1219A01A Futaba VFD display futaba vfd circuit diagram 256X64 Futaba VFD futaba 4 digit Futaba protocol futaba display 126
    Text: TENTATIVE VACUUM FLUORESCENT DISPLAY MODULE ENGINEERING PROPOSAL GP1219A01A EVALUATION □ ACCEPTED WITHOUT ANY CHANGE □ THE FOLLOWING CHANGE IS REQUIRED April 1 , 2008 Engineering Group Electronic Components Division ISSUED Yasuo Ohno BY CHECKED BY CHECKED


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    GP1219A01A GP1219A01A 256Kbit 256x64 ether H5 futaba vfd 9 Futaba VFD display futaba vfd circuit diagram Futaba VFD futaba 4 digit Futaba protocol futaba display 126 PDF

    JEP95

    Abstract: SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K PAE1
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14C SST-GP1214A2 11b/g 16F-6, S71353-03-000 JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K PAE1 PDF

    JEP95

    Abstract: SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:


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    SST12LP15 SST-GP12152 11g/b 16F-6, S71277-02-000 JEP95 SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:


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    SST12LP15 SST-GP12152 11g/b S71277-01-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14A SST-GP1214A2 11g/b S71300-03-000 PDF

    SST12LP15

    Abstract: rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:


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    SST12LP15 SST-GP12152 11g/b S71277-00-000 SST12LP15 rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K PDF

    JEP95

    Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14A SST-GP1214A2 11g/b S71300-02-000 JEP95 SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K PDF

    ZRS1056

    Abstract: No abstract text available
    Text: Data Sheet Model No.: GP120AFK Type : Rechargeable Nickel Cadmium Cylindrical Cell Fast Charge Charge control required Voltage (V) 1.7 Nominal Dimension (with Sleeve) : Φ =17.0mm H =43.0mm 1.6 Applications : Recommended discharge current 120 to 3600mA 1.5


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    GP120AFK 3600mA 1200mA 1200mAh 1320mAh 240mA 600mA 120mA 600mA ZRS1056 PDF

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.


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    GP1200FSS16S DS4336-4 270ns 590ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14C SST-GP1214A2 11b/g S71353-00-000 PDF

    94v0 schematic

    Abstract: GP11MSAKE GP11MSA1KE GP11MSV1KE GP12MSAKE MODEL SA GP12MSC1KE
    Text: GP Series Sealed* Ultra-Miniature Surface Mount Pushbutton Switches *Process sealed–withstands soldering and cleaning processes. GP11MSAKE • C • • GP12MSC1KE Process compatible—withstands IR and vapor phase reflow soldering and cleaning processes


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    GP11MSAKE GP12MSC1KE GP11MSV1KE GP12MSAKE MIL-STD-202F RS-186E 94v0 schematic GP11MSAKE GP11MSA1KE GP11MSV1KE GP12MSAKE MODEL SA GP12MSC1KE PDF

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


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    GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14C SST-GP1214A2 11b/g S71353-01-000 PDF

    SST12LP15A

    Abstract: JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K
    Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP15A SST-GP1215A2 11g/b S71291-02-000 SST12LP15A JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K PDF

    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.


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    GP1200FSS12S DS4547-1 190ns 840ns PDF

    SST12LP15

    Abstract: SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:


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    SST12LP15 SST-GP12152 11g/b S71277-00-000 SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K PDF

    gp731

    Abstract: GP1212
    Text: Case Style GP Outline Dimensions GP731 GP1212 PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 CASE # GP731 GP1212 A B .350 8.89 .350 (8.89) C .100 (2.54) .150 (3.81) D E F G H J K L M .175 (4.45) .075 (1.93) .100 (2.54) .110 (2.79) .040


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    GP731 GP1212 98-GP M124729 gp731 GP1212 PDF

    JEP95

    Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    SST12LP14A SST-GP1214A2 11g/b 16F-6, S71300-04-000 JEP95 SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K PDF

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


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    GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503 PDF

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


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    GP1600FSS12-ABC DS5173-1 GP1200FSS12-ABC PDF

    Untitled

    Abstract: No abstract text available
    Text: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■


    OCR Scan
    GP1200FSS16S DS4336 PDF

    Untitled

    Abstract: No abstract text available
    Text: Sealed* Ultra-Miniature Surface Mount Pushbutton Switches GP Series 'Process sealed-withstands soldering and cleaning processes. SP MODEL WITH SC SURFACE MOUNT TERMINALS .078 1,98 S W ITC H FU N C TIO N P O S .1 PA R T NO . GP12MSCKE Conn. Terms. Schematic


    OCR Scan
    GP12MSCKE 17bQfiflS PDF

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A


    OCR Scan
    DS4336-5 GP1200FSS16S PDF