Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.0mm±0.05mm Code
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GRM155B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.00mm±0.05mm
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GRM15/18/21/31
GRM155B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
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GRM155B11
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.0mm±0.05mm Code
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GRM155B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
GRM155B11
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GRM1552C1H
Abstract: GRM155B11H102KA01B RO4003 GRM155B11 GRM155B11H grm1552c 12-PIN UPG2035T5F UPG2035T5F-E2-A 142-0721
Text: DATA SHEET NEC's BROADBAND GaAs MMIC DPDT SWITCH UPG2035T5F FOR 2.4 GHz AND 5 GHz WLAN FEATURES • DESCRIPTION NEC's UPG2035T5F is a GaAs MMIC DPDT switch for 2.4 GHz and 5 GHz dualband Wireless LAN. OPERATING FREQUENCY: 2.4 to 2.5 GHz and 4.9 to 6.0 GHz specified
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UPG2035T5F
UPG2035T5F
GRM1552C1H
GRM155B11H102KA01B
RO4003
GRM155B11
GRM155B11H
grm1552c
12-PIN
UPG2035T5F-E2-A
142-0721
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
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39E2527A
Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
GRM155B11E103K
GRM155B11H102K
spectrum emission mask
MITSUBISHI Microwave
PW2100
GRM32EB31C476K
grm188B31E105K
metal detector plans
wimax spectrum mask
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HBT 01 05
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
0120sec
HBT 01 05
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GRM31CB30J476K
Abstract: MGFS38E2325 RPC03T
Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E2325-01
MGFS38E2325
64QAM,
IEEE802
16e-2005
0120sec
GRM31CB30J476K
RPC03T
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E3336-01
MGFS38E3336
64QAM,
IEEE802
16e-2005
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NESG3033M14-T3
Abstract: MCR01MZPJ5R1 NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3-A GRM1552C1H GRM155B11H GRM1552C1H270J
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nanoPAN
Abstract: nanoPAN 5360 WE-BPF1008 ism bandpass filter Nanotron Technologies nanotron GRM1552C1H PAN5360 wuerth 748351124
Text: nanoPAN 5360 RF Module Technical Description Version 1.00 NA-05-0119-0339-1.00 Document Information nanoPAN 5360 RF Module Technical Description Document Information Document Title: nanoPAN 5360 RF Module Technical Description Document Version: 1.00 Released yyyy-mm-dd :
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NA-05-0119-0339-1
nanoPAN
nanoPAN 5360
WE-BPF1008
ism bandpass filter
Nanotron Technologies
nanotron
GRM1552C1H
PAN5360
wuerth
748351124
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GRM155B11H102KA01
Abstract: NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A FDK 1575 AML1005H3N9STS
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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NESG3033M14
NESG3032M14
PU10640JJ02V0DS
M8E02
GRM155B11H102KA01
NESG3033M14
AML1005H5N6STS
NESG3032M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
FDK 1575
AML1005H3N9STS
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GRM0222C1C330GD05
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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GRM55DR72E334KW01#
GRM55DR72E474KW01#
GRM55DR72E684KW01#
GRM55DR72E105KW01#
GRM55DR72D334KW01#
GRM55DR72D474KW01#
GRM55DR72D684KW01#
200Vdc
250Vdc
GRM55DR72D105KW01#
GRM0222C1C330GD05
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39E2527A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
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MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
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GRM188F11E104Z
Abstract: GRM155B11E103K GRM188F11E104ZA01 GRM188F11H GRM219F11E105ZA01 GRM188B11H103 GRM188F11E104 GRM188B11H103KA01 GRM155F11H103ZA01 GRM155F11C
Text: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C W Dimensions (mm) L W T e 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3 1.6 ±0.1 0.8 ±0.1 0.8 ±0.1 0.2 to 0.5
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10/16/25/50V
GRM155
GRM188*
GRM216
GRM219
GRM21B
GRM319
GRM31M
GRM31C
GRM033B11C101KD01
GRM188F11E104Z
GRM155B11E103K
GRM188F11E104ZA01
GRM188F11H
GRM219F11E105ZA01
GRM188B11H103
GRM188F11E104
GRM188B11H103KA01
GRM155F11H103ZA01
GRM155F11C
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nanoPAN
Abstract: GRM1552C1H RF MODULE Nanotron Technologies nanoPAN 5360 nanotron BAL0805 antenna murata GRM155B11 NA1TR8
Text: nanoPAN 5361 RF Module Technical Description Version 1.00 NA-05-0119-0340-1.00 Document Information nanoPAN 5361 RF Module Technical Description Document Information Document Title: nanoPAN 5361 RF Module Technical Description Document Version: 1.00 Released yyyy-mm-dd :
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NA-05-0119-0340-1
nanoPAN
GRM1552C1H
RF MODULE
Nanotron Technologies
nanoPAN 5360
nanotron
BAL0805
antenna murata
GRM155B11
NA1TR8
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GRM155B11C223K
Abstract: RPC03T GRM155B11 GRM32EB31C476K
Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •
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MGFS38E2527-01
MGFS38E2527
64QAM,
IEEE802
16e-2005
0V60120sec
GRM155B11C223K
RPC03T
GRM155B11
GRM32EB31C476K
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •
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MGFS38E2325-01
MGFS38E2325
64QAM,
IEEE802
16e-2005
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GRM21bc81c106
Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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20eristics
ISO14001
C02E-18
GRM21bc81c106
GRM155B11
grm155b31a474ke
GRM32EB30J107
GRM31CB31
grm1882c1h100
GRM31BR7
GJM0334
GRM188R11H104
GRM033R61A104KE
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •
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MGFS38E2527-01
MGFS38E2527
64QAM,
IEEE802
16e-2005
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28
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MGFS39E3336-01
39E3336
30dBm
64QAM,
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X7T voltage dependence
Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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ISO14001
C02E-17
X7T voltage dependence
GRM155B31A225K
GR331
GRM155R71E104K
GRM188R61E475
GRM188R71C105KA12
GRM1555C1HR10BA01
GRM32ER71H106KA12
GRM0222C1A101GD05
GRM188D71
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39E3336
Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28
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MGFS39E3336-01
39E3336
30dBm
64QAM,
40deg
39E3336
MGFS39E3336
SWT-9
GRM188B31E105KA75
spectrum emission mask wimax
MGFS39E3336-01
GRM155B11H1
160kO
GRM188B31E
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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