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Catalog Datasheet	MFG & Type	Document Tags	PDF
RD07MUS2B Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V	Original	AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E	PDF
gp 722 Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout	Original	AN-VHF-036-A RD00HVS1 150-162MHz RD00HVS1: 150MHz 156MHz 162MHz c72JB CR1/10-241JB gp 722 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E	PDF
RD07MUS2B Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	AN-UHF-098-B RD07MUS2B 400-470MHz RD07MUS2B: 086ZE-G" RD07MUS2B 470MHz 250mA GRM216R11H223KA01E A0603 GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743	PDF
7107 GP Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	AN-UHF-096-A RD07MUS2B 450-527MHz RD07MUS2B: 083YH-G" RD07MUS2B 527MHz 250mA 527MHz) 10ohm 7107 GP Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line	PDF
RD01MUS2 Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V	Original	AN-UHF-097-B RD01MUS2 RD07MUS2B 400-470MHz RD07MUS2B 086ZE-G" 470MHz AN-UHF-097-B- RD01MUS2 GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C	PDF