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GRM1882C1H100JA01D Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V	Original	AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D	PDF
RD07MUS2B Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V	Original	AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E	PDF
GRM2162C1H101JA01D Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .	Original	AN-900-041-A RD07MUS2B 800-870MHz RD07MUS2B: 086ZE-G" 800MHz, 820MHz, 840MHz, 860MHz, 870MHz, GRM2162C1H101JA01D H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E	PDF
GRM2162C1H180JZ01D Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V	Original	AN-UHF-105-A RD07MUS2B 380-430MHz RD07MUS2B: 086ZE-G" 380MHz, 405MHz, 430MHz, 250mA 18ksps, GRM2162C1H180JZ01D GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A	PDF
gp 722 Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout	Original	AN-VHF-036-A RD00HVS1 150-162MHz RD00HVS1: 150MHz 156MHz 162MHz c72JB CR1/10-241JB gp 722 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E	PDF
GRM1882C1H330JA01D Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.	Original	AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1	PDF
RD07MUS2B Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	AN-UHF-098-B RD07MUS2B 400-470MHz RD07MUS2B: 086ZE-G" RD07MUS2B 470MHz 250mA GRM216R11H223KA01E A0603 GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743	PDF
350-400MHZ Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V	Original	AN-UHF-106-A RD07MUS2B 350-400MHz RD07MUS2B: 08XXA-G" 350MHz, 375MHz, 400MHz, 250mA 18ksps, GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D	PDF
7107 GP Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier	Original	AN-UHF-096-A RD07MUS2B 450-527MHz RD07MUS2B: 083YH-G" RD07MUS2B 527MHz 250mA 527MHz) 10ohm 7107 GP Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line	PDF
GRM2162C Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V	Original	AN-UHF-076-A RD00HVS1 450-470MHz RD00HVS1: 450MHz 460MHz 470MHz C1H100FD01E GRM2162C1H680GD01E GRM2162C GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E 30t60	PDF