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diode 400V 1A SOD-123 Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor Text: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high	Original	PDF	TC3741 TC3741 1000PF 600F0R7BT 600F1R0BT GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L OD-123) diode 400V 1A SOD-123 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R cap 0805 RF capacitor
GRM39Y5V104Z25V Abstract: RO4003 Text: TC3332 REV2_20070613 3.3 - 4.0 GHz 1W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 30 dBm ! Small Signal Gain: 27 dB ! Power Added Efficiency: 25 % ! IP3: 39 dBm ! Input/Output 50 Ω Match ! Bias condition: 500 mA @ 9 V DESCRIPTION The TC3332 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and	Original	PDF	TC3332 TC3332 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L GRM39Y5V104Z25V RO4003
CAP 0805 ATC 600F Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %	Original	PDF	TC2997D TC2997D GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) 250WVDC) CAP 0805 ATC 600F chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
TC2996D Abstract: GaAs FET chip GRM39Y5V104Z25V Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %	Original	PDF	TC2996D TC2996D GRM39COG0R7C50V GRM39COG1R5C50V 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) GRM39COG2R5C50V GaAs FET chip GRM39Y5V104Z25V
ATC 600F Abstract: RO4003 GRM39Y5V104Z25V TC3943 10GHZ GAAS Text: TC3943 REV2_20070503 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz	Original	PDF	TC3943 10GHz TC3943 27dBm 10GHz. TC3943_ ATC 600F RO4003 GRM39Y5V104Z25V 10GHZ GAAS
D1 diode Abstract: diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 TC3541 cap 1210 Murata WiFi Text: TC3541 REV0_20060921 5.2 – 5.9 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 20 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1000 mA @ 9 V DESCRIPTION The TC3541 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high	Original	PDF	TC3541 TC3541 APPLICATITC3541 1000PF OD-123) GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L D1 diode diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 cap 1210 Murata WiFi