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    Murata Manufacturing Co Ltd GRM55ER72A475KA01L

    CAP CER 4.7UF 100V X7R 2220
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    DigiKey GRM55ER72A475KA01L Reel
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    GRM55ER72A475KA01L Digi-Reel 1
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    GRM55ER72A475KA01L Cut Tape 1
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    Verical GRM55ER72A475KA01L 1,998 48
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    Bristol Electronics GRM55ER72A475KA01L 5,557
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    GRM55ER72A475KA01L 859
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    Quest Components GRM55ER72A475KA01L 687
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    GRM55ER72A475KA01L 520
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    GRM55ER72A475KA01L 372
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    GRM55ER72A475KA01L 247
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    GRM55ER72A475KA01L 231
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    GRM55ER72A475KA01L 176
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    GRM55ER72A475KA01L 100
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    GRM55ER72A475KA01L 18
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    GRM55ER72A475KA01L 5
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    TTI GRM55ER72A475KA01L Reel 27,000 500
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    GRM55ER72A475KA01L Cut Tape 4,300 10
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    TME GRM55ER72A475KA01L 1,998 1
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    ComSIT USA GRM55ER72A475KA01L 6,000
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    Velocity Electronics GRM55ER72A475KA01L 74
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    Chip 1 Exchange GRM55ER72A475KA01L 470
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    Avnet Abacus GRM55ER72A475KA01L Reel 23,500 19 Weeks 500
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    Component Electronics, Inc GRM55ER72A475KA01L 550
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    Win Source Electronics GRM55ER72A475KA01L 2,528
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    Others GRM55ER72A475KA01L

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 100V, 10% +TOL, 10% -TOL, X7R, 15% TC, 4.7UF, SURFACE MOUNT, 2220
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    Quest Components GRM55ER72A475KA01L 392
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    Chip-Germany GmbH GRM55ER72A475KA01L 828
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    GRM55ER72A475K Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM55ER72A475KA01 muRata CAP,CER,4.7UF,X7R,100V,10%,2220 Original PDF
    GRM55ER72A475KA01L muRata Ceramic Capacitors, Capacitors, CAP CER 4.7UF 100V 10% X7R 2220 Original PDF

    GRM55ER72A475K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GRM55ER72A475KA01

    Abstract: capacitor 2220
    Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM32/43/55 Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.70mm±0.40mm


    Original     		PDF GRM32/43/55 GRM55ER72A475KA01p 100Vdc) 180mm 330mm GRM55ER72A475KA01 capacitor 2220

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code


    Original     		PDF GRM55ER72A475KA01p 100Vdc) 180mm 330mm 100Vdc

    GRM55ER72A475K

    Abstract: MURATA GRM55ER72A475K GRM55ER72A475
    Text: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 2220 X7R 4.7uF 100V Murata Global Part No: GRM55ER72A475K 1. Dimension 3. Impedance/ESR - Frequency Equipment: 1000 T Impedance Impedance/ESR ohm W ( mm) L W T 5.7 +/-0.4 5.0 +/-0.4 2.5 +/-0.2


    Original     		PDF GRM55ER72A475K 025max CVHF-400 GRM55ER72A475K MURATA GRM55ER72A475K GRM55ER72A475

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code


    Original     		PDF GRM55ER72A475KA01p 100Vdc) 180mm 330mm

    GRM55DR72J224KW01L

    Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
    Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05


    Original     		PDF 10/16/25/50V GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GRM55DR72J224KW01L gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz

    EI -40C

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		PDF RF3933 DS120306 EI -40C

    GRF31CR72A105KA01L

    Abstract: grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV
    Text: C44E1.pdf 04.4.6 Chip Monolithic Ceramic Capacitors for DC-DC Converters Chip Monolithic Ceramic Capacitors for DC-DC Converters C44E1.pdf 04.4.6 Murata's extensive and complete chip capacitor line up enables your DC-DC converters and voltage regulators to be compact and high performanced.


    Original     		PDF C44E1 GRF31CR72A105KA01L grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To


    Original     		PDF RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology


    Original     		PDF RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz

    RFHA1000

    Abstract: No abstract text available
    Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT

    RFG1M20180SB

    Abstract: j35 fet RFG1M20180SQ
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original     		PDF RF3934 RF3934 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X

    ATC800A

    Abstract: RF3931 ER35
    Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB


    Original     		PDF RF3931 EAR99 RF3931 cellul01L GRM55ER72A475KA01L 100uF, ECE-V1HA101UP ATC800A ER35

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406

    GRM55ER72A475KA01L

    Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


    Original     		PDF RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		PDF RFG1M20090 RFG1M20090 DS130823

    Untitled

    Abstract: No abstract text available
    Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		PDF RF3933 RF3933 DS130905