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Samtec Inc DW-16-12-G-S-669 CONN HDR 16POS 0.1 STACK T/H Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-16-12-G-S-669	Bulk			1	1 $3.22 10 $3.22 100 $3.22 1000 $3.22 10000 $3.22	Buy Now
Avnet Americas	DW-16-12-G-S-669	Bulk			1	1 $3.0184 10 $2.5545 100 $2.0352 1000 $2.0352 10000 $2.0352	Buy Now
Mouser Electronics	DW-16-12-G-S-669					1 $3.19 10 $3.19 100 $2.32 1000 $1.58 10000 $1.05	Get Quote
Newark	DW-16-12-G-S-669	Bulk			1	1 $3.08 10 $2.94 100 $2.47 1000 $1.77 10000 $1.6	Buy Now
Powell Electronics	DW-16-12-G-S-669		176		1	1 $3.36 10 $3.36 100 $2.32 1000 $1.59 10000 $1.59	Buy Now

Master Electronics	DW-16-12-G-S-669					1 - 10 $2.62 100 $2.12 1000 $1.62 10000 $1.06	Buy Now
Sager	DW-16-12-G-S-669		266		1	1 $3.36 10 $3.36 100 $2.32 1000 $1.59 10000 $1.43	Buy Now
JRH Electronics DW-16-12-G-S-669 CONN HDR 16POS 0.1 STACK T/H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-16-12-G-S-669	Bulk			1	1 $6.11 10 $6.11 100 $6.11 1000 $2.89091 10000 $2.89091	Buy Now
Samtec Inc EW-05-12-G-S-669 CONN HDR 5POS 0.1 STACK T/H GOLD Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EW-05-12-G-S-669	Bulk			1	1 $1.24 10 $1.24 100 $1.24 1000 $1.24 10000 $1.24	Buy Now
Avnet Americas	EW-05-12-G-S-669	Bulk			1	1 $1.1172 10 $0.63838 100 $0.7296 1000 $0.7296 10000 $0.7296	Buy Now
Mouser Electronics	EW-05-12-G-S-669					1 $1.21 10 $1.21 100 $0.76 1000 $0.5 10000 $0.27	Get Quote
Newark	EW-05-12-G-S-669	Bulk			1	1 $1.14 10 $0.992 100 $0.855 1000 $0.624 10000 $0.517	Buy Now
Powell Electronics	EW-05-12-G-S-669		553		1	1 $1.21 10 $1.21 100 $0.76 1000 $0.5 10000 $0.5	Buy Now

Master Electronics	EW-05-12-G-S-669					1 - 10 - 100 $0.9231 1000 $0.5672 10000 $0.3913	Buy Now
Sager	EW-05-12-G-S-669		838		1	1 $1.21 10 $1.21 100 $0.76 1000 $0.5 10000 $0.46	Buy Now
JRH Electronics EW-05-12-G-S-669 CONN HDR 5POS 0.1 STACK T/H GOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EW-05-12-G-S-669	Bulk			1	1 $2.2 10 $2.2 100 $2.2 1000 $0.90909 10000 $0.90909	Buy Now
Samtec Inc DW-12-12-G-S-669 CONN HDR 12POS 0.1 STACK T/H Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-12-12-G-S-669	Bulk			1	1 $2.48 10 $2.48 100 $2.48 1000 $2.48 10000 $2.48	Buy Now
Avnet Americas	DW-12-12-G-S-669	Bulk			1	1 $2.2834 10 $1.91295 100 $1.53024 1000 $1.53024 10000 $1.53024	Buy Now
Mouser Electronics	DW-12-12-G-S-669					1 $2.39 10 $2.39 100 $1.74 1000 $1.18 10000 $0.62	Get Quote
Newark	DW-12-12-G-S-669	Bulk			1	1 $2.33 10 $2.22 100 $1.86 1000 $1.34 10000 $1.21	Buy Now
Powell Electronics	DW-12-12-G-S-669		230		1	1 $2.52 10 $2.52 100 $1.74 1000 $1.19 10000 $1.19	Buy Now

Master Electronics	DW-12-12-G-S-669					1 - 10 $1.962 100 $1.594 1000 $1.271 10000 $0.814	Buy Now
Sager	DW-12-12-G-S-669		348		1	1 $2.52 10 $2.52 100 $1.74 1000 $1.19 10000 $1.08	Buy Now

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GS 669 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GR451 Abstract: GP247 GP356 GP410 GP415 GP347 GP327 GP533 GP239 gm392 Text: Types GE, GH, GM, GP, GR, GS, GT Disc Ceramics Capacitors General Purpose Capacitors Type G general purpose disc ceramic capacitors are an ideal choice for low cost, small size and low to high DC voltage, general purpose, coupling, by-pass and ﬁltering applications.	Original		PDF
EIA-364-09 Abstract: EIA-364-21 EIA-364-28 EIA-364-31 EIA-364-32 EIA-364-10 EIA364-1000 EIA-364-65 Text: TYPE NUMBER PRODUCT SPECIFICATION TITLE GS-12-301 PAGE REVISION 1 of 4 EXPRESSCARD HOST SYSTEM PRODUCT SPECIFICATION AUTHORIZED BY A DATE KENNY TAI 07/08/'04 CLASSIFICATION CONFIDENTIAL 1. OBJECTIVE This specification defines the performance, test, quality and reliability requirements of ExpressCard host	Original	GS-12-301 T04-0426 E-3005 V20603 GS-01-001 EIA-364-09 EIA-364-21 EIA-364-28 EIA-364-31 EIA-364-32 EIA-364-10 EIA364-1000 EIA-364-65	PDF
HAT2042T Abstract: Hitachi DSA00240 Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G	Original	HAT2042T ADE-208-669F HAT2042T Hitachi DSA00240	PDF
Hitachi DSA002752 Abstract: No abstract text available Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G	Original	HAT2042T ADE-208-669F Hitachi DSA002752	PDF
Hitachi DSA002731 Abstract: No abstract text available Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12	Original	HAT2042T ADE-208-669F D-85622 Hitachi DSA002731	PDF
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175 Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3 D475A C3175	PDF
Untitled Abstract: No abstract text available Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3	PDF
08CNE8N Abstract: No abstract text available Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N	PDF
IEC61249-2-21 Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107 Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB08CNE8N IPI08CNE8N IPP08CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 diode R 107	PDF
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3	PDF
PJ6694 Abstract: SOIC-08 Text: PJ6694 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@12A=12mΩ • RDS(ON), [email protected],IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters	Original	PJ6694 SOIC-08 MIL-STD-750D PJ6694	PDF
si8956 Abstract: No abstract text available Text: T e m ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary r DS on ( Q ) I d (A) 0.1 @ v GS = 10 V 5 0.2 @ V GS = 4.5 V 1 V d s CV) 20 LCC-20 Sj Si D2 D2 Gj D4 D4 G3 S3 S3 Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)	OCR Scan	8956AZ/883 LCC-20 P-36673--Rev. 36673--Rev. si8956	PDF
Untitled Abstract: No abstract text available Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:	OCR Scan	ci2cJ237 SGSP358	PDF
ti082 Abstract: No abstract text available Text: Æ T SCS TH O M SO N M ê^(&[i(gIF[MO(gS TL082 TL082A - TL082B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION	OCR Scan	TL082 TL082A TL082B TL082, TL082B GS314S TL082 ti082	PDF

RS1026 Abstract: RS1064C SRS 4451 siemens datenbuch "WF Berlin" srs 360 RS1002A yl 1050 tetrode siemens rs 1007 RS1046 RS1072C Text: S IE M E N S Datenbuch 1980/81 gsgekühlt • for t • wassergekü ühlt * verdamp ühlt • siedekor nsgekühlt stra i r e r i ü h " • K i • ssergeku ühlt verdamp ühlt * sied ikon nsgekühlt stra gs skühlt • for t wassergekü :ühlt • verde p	OCR Scan		PDF
15K05 Abstract: C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8 Text: SHARP E L E K / M E L E C .O IV 1SE D I 0 Q0 13 GS Pulse Dialer C M O S LSI LR40994 T-75-Û 7-Û 7 LR40994 • Pulse Dialer CMOS LSI Description ■ Pin Connections The LR40994 is a monolithic CMOS LSI which uses a CR oscillator and provides the features re	OCR Scan	LR40994 T-75-Ã 10/20pps 17-digit 1000ms 18-pin T-75-07-07 15K05 C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8	PDF
Mosfet FTR 03-E Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337 Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP	OCR Scan	2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337	PDF
SBR80 Abstract: SBR8035 SBR8040 SBR8045 SBR8050 Text: Schottky Rectifier SBR80 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode “ÎÔ41 A B C D E F G H J K M N P - .669 .422	OCR Scan	SBR80 D0203AB SBR8035â SBR8040Â SBR8045 SBR8050 SBR8035 SBR8040 SBR8045 SBR8050	PDF
Untitled Abstract: No abstract text available Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in	OCR Scan	BUK575-100A/B 7110fl2fci 004472T 711Gfl2b	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
transistor f630 Abstract: f630 F630 TO 252 UF630 Text: CEDF630/CEUF630 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V , 9 A , R d s o n =400 itiQ @Vgs=10V. • Super high dense cell design for extremely low Rds(onj. • High power and current handling capability. • TO-251 &TO-252 package.	OCR Scan	CEDF630/CEUF630 400itiQ O-251 O-252 to-252m to-251 transistor f630 f630 F630 TO 252 UF630	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit	OCR Scan	O-220 C67078-S1343-A2 8235bD5 0235bQ5	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn	OCR Scan	160mn 1CH23	PDF
SD 347 transistor Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C	OCR Scan	O-218 C67078-S3115-A2 SD 347 transistor	PDF

GS 669 Search Results

GS 669 Price and Stock

Samtec Inc DW-16-12-G-S-669

JRH Electronics DW-16-12-G-S-669

Samtec Inc EW-05-12-G-S-669

JRH Electronics EW-05-12-G-S-669

Samtec Inc DW-12-12-G-S-669

GS 669 Datasheets Context Search

GR451

EIA-364-09

HAT2042T

Hitachi DSA002752

Hitachi DSA002731

08CNE8N

Untitled

08CNE8N

IEC61249-2-21

08CNE8N

PJ6694

si8956

Untitled

ti082

RS1026

15K05

Mosfet FTR 03-E

SBR80

Untitled

BGY41

transistor f630

Untitled

Untitled

SD 347 transistor