GSC356-HYB2500
Abstract: soshin
Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC356-HYB2500 2.5GHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC356-HYB2500 Impedance 50 ohm Nominal Frequency Range 2400-2700MHz
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GSC356-HYB2500
90Deg.
2400-2700MHz
500pcs/Reel
jp/c00
GSC356-H.
GSC356-HYB2500
soshin
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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ATC600S6R8BT250
Abstract: GRM55DR61H106KA88 ATC600S0R ATC600S0R5BT250XT wimax spectrum mask AN1977 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 3, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage
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MD7IC2755N
MD7IC2755N
MD7IC2755NR1
MD7IC2755GNR1
ATC600S6R8BT250
GRM55DR61H106KA88
ATC600S0R
ATC600S0R5BT250XT
wimax spectrum mask
AN1977
AN1987
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
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GRM1882C1H100J
Abstract: No abstract text available
Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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SGN27C210I2D
655GHz
/-10MHz
48dBm
GRM1882C1H100J
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P26080H
MRF8P26080HR3
MRF8P26080HSR3
MRF8P26080HR3
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Ab3230
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 2, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500-2700 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
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MD7IC2755N
MD7IC2755NR1
MD7IC2755GNR1
MD7IC2755N
Ab3230
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ATC600S0R5BT250XT
Abstract: ZO 607 MA A114 A115 AN1977 AN1987 C101 JESD22 ATC600S0R J851
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 0, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on - chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage
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MD7IC2755N
MD7IC2755N
MD7IC2755NR1
MD7IC2755GNR1
ATC600S0R5BT250XT
ZO 607 MA
A114
A115
AN1977
AN1987
C101
JESD22
ATC600S0R
J851
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GSC356-HYB2500
Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P26080H
MRF8P26080HR3
MRF8P26080HSR3
MRF8P26080HR3
GSC356-HYB2500
MRF8P26080
LTE base station
GRM32DR71H335KA
MRF8P26080HS
AN1955
atc600f
ATC600F220JT250XT
2595MHz
J625
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GSC356-HYB2500
Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
ATC600F1R0JT250XT
atc600f100jt250xt
J930
ATC600F0R8JT250XT
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GSC356-HYB2500
Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
GRM21BR71H105KA12
ATC600F100JT250XT
MRF8P23080H
J930
ATC600F5R6JT250XT
J935
ATC600F180
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 3, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage
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MD7IC2755N
MD7IC2755N
MD7IC2755NR1
MD7IC2755GNR1
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