EIA-310
Abstract: general gsm modem block diagram RPE-LTP EIA-320 Firmware interface GSM gsm modem block diagram processor modem analog digital converter memory mp3 decoder circuit gsm to analog converter GSM Viterbi
Text: CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS PCI3800 EDGE PCI3800 EDGE Integrated Baseband Processor GSM GENERAL FEATURES Complete GSM Series 4, 5, and 11.10 specification compatibility Supports up to 14.4 kbps circuit-switched data services Supports General Packet Radio Service GPRS through Class 1, Type 12
|
Original
|
PDF
|
PCI3800
PCI3800
TIA/EIA-136
TIA/EIA-136-270
TIA/EIA-310,
TIA/EIA-350,
TIA/EIA-320
280-ball
EIA-310
general gsm modem block diagram
RPE-LTP
EIA-320
Firmware interface GSM
gsm modem block diagram
processor modem analog digital converter memory
mp3 decoder circuit
gsm to analog converter
GSM Viterbi
|
CX20460-32
Abstract: GP01-D232 CX20460 CX20460-11 CX20460-12 wireless mobile charger block diagram
Text: PRODUCT SUMMARY CX20460 Power Management Integrated Circuit for GSM and GPRS Applications Applications • GSM and GPRS handsets/data modules Features • Power on/off control • Generation of system voltages from a single power source • Eight regulators
|
Original
|
PDF
|
CX20460
48-pin
103185C
CX20460-32
GP01-D232
CX20460-11
CX20460-12
wireless mobile charger block diagram
|
APN2016
Abstract: AS186-302 AS164-80 AS165-59 AS196-307 DCS1800 PCS1900
Text: High Isolation Synthesizer Selection Circuit for GSM, DCS1800, PCS1900 APN2016 The ability to switch between two synthesizers is a standard requirement in GSM and PCS digital base stations. Typically the isolation required between synthesizers exceeds 90 dB. The most common design
|
Original
|
PDF
|
DCS1800,
PCS1900
APN2016
9/03A
APN2016
AS186-302
AS164-80
AS165-59
AS196-307
DCS1800
PCS1900
|
TO272
Abstract: 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 TAJE226M035R
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
|
Original
|
PDF
|
MW4IC915/D
MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
TO272
03B3
1206 cms diode
100B100JCA500X
A113
MW4IC915GMBR1
MW4IC915MB
TAJE226M035R
|
1206 cms diode
Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
|
Original
|
PDF
|
MW4IC915/D
MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
1206 cms diode
08055C103KAT
A113
MW4IC915GMBR1
MW4IC915MB
RF35
1206 cms
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to
|
Original
|
PDF
|
MWIC930N
MWIC930NR1
MWIC930GNR1
MWIC930N
|
Untitled
Abstract: No abstract text available
Text: Document Number: MWIC930N Rev. 6, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescales newest High Voltage 26 to
|
Original
|
PDF
|
MWIC930N
MWIC930N
MWIC930NR1
MWIC930GNR1
|
free IC 4558
Abstract: ATC600S470JW MWIC930NR1 free schematic diagram of IC 4558 atc600 A113 AN1955 AN1977 AN1987 MWIC930GNR1
Text: Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to
|
Original
|
PDF
|
MWIC930N
MWIC930N
MWIC930NR1
MWIC930GNR1
free IC 4558
ATC600S470JW
free schematic diagram of IC 4558
atc600
A113
AN1955
AN1977
AN1987
MWIC930GNR1
|
AS123-12
Abstract: AS148-24 DCS1800 PCS1900 GaAs IC High Isolation Positive Control Switch
Text: High Isolation Synthesizer Selection Circuit for GSM, DCS1800, PCS1900 The ability to switch between two synthesizers is a standard requirement in GSM and PCS digital base stations. Typically the isolation required between synthesizers exceeds 90 dB. The most common design
|
Original
|
PDF
|
DCS1800,
PCS1900
3/98A
AS123-12
AS148-24
DCS1800
PCS1900
GaAs IC High Isolation Positive Control Switch
|
08055C103KAT
Abstract: No abstract text available
Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High
|
Original
|
PDF
|
MW4IC915/D
MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
DEVICEMW4IC915/D
08055C103KAT
|
TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
|
Original
|
PDF
|
MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
TO272
RM73B2BT
A113
GRM42
MWIC930GR1
2XE3
|
C12R1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
|
Original
|
PDF
|
MWIC930/D
MWIC930
MWIC930R1
MWIC930GR1
C12R1
|
Untitled
Abstract: No abstract text available
Text: RF7176D RF7176DDualBand TX/DualBand RX GSM/GPRS DUAL-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE Integrated VBATT Tracking Circuit 8kV Robust ESD Protection at Antenna Port No External Routing Low RX Insertion Loss Symmetrical RX Ports
|
Original
|
PDF
|
RF7176D
RF7176DDualBand
EGSM900
DCS18,
DS110503
|
AFG2020
Abstract: E4413A LMV243BL smiq LMV243 smd transistor marking PA E4418B LMV243BLX 2002900 ROHDE & SCHWARZ fsp
Text: LMV243 Single-Channel, Quad-Band GSM Power Controller in micro SMD General Description Features The device is intended for use within an RF transmit power control loop in GSM mobile phones and supports GaAs HBT and bipolar RF single supply power amplifiers. The circuit
|
Original
|
PDF
|
LMV243
LMV243
AFG2020
E4413A
LMV243BL
smiq
smd transistor marking PA
E4418B
LMV243BLX
2002900
ROHDE & SCHWARZ fsp
|
|
|
IC vco 900 1800 mhz
Abstract: vco 900 1800 mhz GSM IC vco 1800 mhz mvco rx-tx T0701 T0701-RPQ T0701-RPT TQFP64 TST0911
Text: T0701 GSM-GPRS Receiver Description The T0701 is a bipolar integrated RF transceiver for GSM-based cellular systems 900/ 1800/ 1900 MHz and other wireless communication applications. This integrated circuit consists of a superheterodyne receiver with a high 1st intermediate frequency (IF) of 378 MHz
|
Original
|
PDF
|
T0701
T0701
D-74025
04-Oct-00
IC vco 900 1800 mhz
vco 900 1800 mhz GSM
IC vco 1800 mhz
mvco
rx-tx
T0701-RPQ
T0701-RPT
TQFP64
TST0911
|
pll saw filter modulator circuit diagram
Abstract: G3-64 vco 900 1800 mhz GSM part number IC vco 900 1800 mhz
Text: T0701 GSM-GPRS Receiver Description The T0701 is a bipolar integrated RF transceiver for GSM-based cellular systems 900/ 1800/ 1900 MHz and other wireless communication applications. This integrated circuit consists of a superheterodyne receiver with a high 1st intermediate frequency (IF) of 378 MHz
|
Original
|
PDF
|
T0701
T0701
D-74025
08-May-00
pll saw filter modulator circuit diagram
G3-64
vco 900 1800 mhz GSM part number
IC vco 900 1800 mhz
|
wireless mobile charger block diagram
Abstract: Kostat tray kostat skyworks 6 x 6 CX20460-11 Kostat CX20460 CX20460-12 CX20505-14
Text: PRODUCT SUMMARY CX20460 Power Management Integrated Circuit for GSM and GPRS Applications Description APPLICATIONS • GSM and GPRS handsets/data modules FEATURES • • • • • • • • • • Power on/off control Generation of system voltages from a single power source
|
Original
|
PDF
|
CX20460
48-pin
03185A
376-3000fax
376-3100sales
wireless mobile charger block diagram
Kostat tray
kostat skyworks 6 x 6
CX20460-11
Kostat
CX20460-12
CX20505-14
|
rf3235
Abstract: No abstract text available
Text: RF3235 RF3235QUADBAND GSM/GPRS Tx MODULE WITH UMTS TRANSMIT/RECEIVE PORTS QUAD-BAND GSM/GPRS Tx MODULE WITH UMTS TRANSMIT/RECEIVE PORTS GND GND GND TRX2 TRX3 TRX4 GND GND GND GND GND Package: Module 30-pin, 6mm x 6mm x 1mm Integrated VBATT Tracking Circuit
|
Original
|
PDF
|
RF3235
RF3235QUADBAND
30-pin,
DS120104
rf3235
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage
|
Original
|
PDF
|
MW4IC915MB/GMB
MW4IC915MBR1
MW4IC915GMBR1
|
J293
Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its
|
Original
|
PDF
|
MWIC930
MWIC930R1
MWIC930GR1
J293
ATC600S150JW
J1805
ATC600S6R8CW
atc600s1
J053
TO272
RM73B2BT
|
RAYTHEON
Abstract: RMPA1955-99 GPRS Diagram
Text: RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier PA Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip
|
Original
|
PDF
|
RMPA1955-99
RMPA1955-99
RAYTHEON
GPRS Diagram
|
gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
|
OCR Scan
|
PDF
|
PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
|
CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
|
OCR Scan
|
PDF
|
CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
|
DB-135
Abstract: D103D gsm signal amplifier VDAi TCM4400 bit143 e/0.3 GMSK
Text: TCM4400 GSM/DCS BASEBAND AND VOICE A/D AND D/A RF INTERFACE CIRCUIT SLW S029-JUNE 1996 • • • • • Applications Include GSM 900 and DCS 1800 Cellular Telephones 80-Pin TQFP Package Single 3-V Supply Voltage Internal Voltage Reference Extended RF Control Voltages
|
OCR Scan
|
PDF
|
TCM4400
SLWS029
80-Pin
TCM4400
nbl724
010312b
DB-135
D103D
gsm signal amplifier
VDAi
bit143
e/0.3 GMSK
|
