Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19
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S3590-08/-09/-18/-19
S3590-08/-09
S3590-18/-19
S3590-09/-19
S3590-09
S3590-19
S3590-08
S3590-09
S3590-18
S3590-19
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S3590-08
Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)
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S3590-18/-19
S3590-19:
SE-171
KPIN1039E01
S3590-08
S3590
S3590-09
S3590-18
S3590-19
ceramic scintillator
PIN photodiode 420 nm
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PIN photodiode 420 nm
Abstract: S3590-18 S3590-08 S3590-09 S3590-19 GSO 69
Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)
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S3590-18/-19
S3590-19:
SE-171
KPIN1039E01
PIN photodiode 420 nm
S3590-18
S3590-08
S3590-09
S3590-19
GSO 69
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Untitled
Abstract: No abstract text available
Text: Si PI N photodiode S3590-08/-09/-18/-19 Large active area Si PI N photodiode Features Applications Sensitivity matching w ith BGO and CsI TI scintillators: S3590-08/ -09 Scintillation detectors Hodoscopes Sensitivity matching w ith blue scintillator ( LSO, GSO, etc.) :
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S3590-08/-09/-18/-19
S3590-08/
S3590-18/
S3590-09/
S3590-09
S3590-19
S3590-08
S3590-18
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PIN Photodiode
Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
Text: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19
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S3590-08/-09/-18/-19
S3590-08/-09
S3590-18/-19
S3590-09/-19
S3590-09
S3590-19
S3590-08
S3590-09
S3590-18
S3590-19
PIN Photodiode
Si PIN PHOTODIODE
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GSO 69
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)
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S3590-18/-19
S3590-19:
SE-171
KPIN1039E01
GSO 69
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Untitled
Abstract: No abstract text available
Text: ICS9FG1904B-1 Integrated Circuit Systems, Inc. Frequency Generator for CPU, PCIe Gen 1, PCIe Gen 2 & FBD Recommended Application: Functionality at Power Up PLL Mode CLK_IN (CPU FSB) 1 FS_A_410 MHz 1 100 <= CLK_IN < 200 200<= CLK_IN <= 400 DB1900GS/GSO with 15:4 output grouping
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ICS9FG1904B-1
DB1900GS/GSO
100ps
9FG1904BK-1LFT
1255Bâ
9FG1904B-1.
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db1200GS
Abstract: CK410B CK410B datasheet CK410 ICS9FG1904B-1 9FG1200 ICS9FG1904 DB1900GS 9FG1200-1
Text: ICS9FG1904B-1 Integrated Circuit Systems, Inc. Frequency Generator for CPU, PCIe Gen 1, PCIe Gen 2 & FBD Recommended Application: Functionality at Power Up PLL Mode CLK_IN (CPU FSB) 1 FS_A_410 MHz 1 100 <= CLK_IN < 200 200<= CLK_IN <= 400 DB1900GS/GSO with 15:4 output grouping
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ICS9FG1904B-1
DB1900GS/GSO
100ps
9FG1904BK-1LFT
1255B--08/03/07
9FG1904B-1.
db1200GS
CK410B
CK410B datasheet
CK410
ICS9FG1904B-1
9FG1200
ICS9FG1904
DB1900GS
9FG1200-1
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S3590-19
Abstract: No abstract text available
Text: H A M A M A T S U PRELIMINARY DATA Nov, 1998 Si P,N p h o t o d io d e S3590-18 Large area Si PIN photodiode for scintillation counting FEATURES • Suitable for coupling with blue scintillator LSO, GSO, etc. • Internal Quantum Efficiency = 100 % (k=420 nm)
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S3590-18
S3590-19
KP1N1039E01
S3590-19
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Untitled
Abstract: No abstract text available
Text: <:>F0<:>F/F 5GFB@BF=H9 D9?5J :NKXYVNW , N\s3^jiodijpn ^pmm`io 95C , N\s3h\fdib ^pmm`io 755C , Gso`i_`_ o`hk3 m\ib` pk oj 65: , Xdoc cdbcgt `no\]gdnc`_ m`gd\]dgdot , Tomjib m`ndno\i^` \]dgdot oj ncj^f - qd]m\odji F[UPLKQ 5UUQPLKXPTSW , S`agjr njg_`mdib q`mndji \q\dg\]g`
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5D57F9D
855hW
9h4n71
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GSO 69
Abstract: ES1988 AD27 AD29 AD30 ES2828 ES1988 Allegro audio modem riser ES1988S
Text: ESS Technology, Inc. DESCRIPTION The ES1988 Allegro PCI audio-modem accelerator combines advanced audio and modem functionality in a highly integrated PCI solution. Utilizing one PCI load, the ES1988 provides a two chip audio-modem solution with digital interface capability to an
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ES1988
SAM0368-051302
GSO 69
AD27
AD29
AD30
ES2828
ES1988 Allegro
audio modem riser
ES1988S
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GSO 69
Abstract: AD27 AD29 AD30 ES1988 ES2828 PC99 audio sound signal HRTF ES1988S
Text: ESS Technology, Inc. DESCRIPTION The ES1988 Allegro PCI audio-modem accelerator combines advanced audio and modem functionality in a highly integrated PCI solution. Utilizing one PCI load, the ES1988 provides a twochip audio-modem solution with digital interface capability to an
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ES1988
SAM0368-030601
GSO 69
AD27
AD29
AD30
ES2828
PC99
audio sound signal HRTF
ES1988S
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Untitled
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM
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150hms
CM697
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TRANSISTOR SL 100
Abstract: bs107a
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown
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BS107A
TRANSISTOR SL 100
bs107a
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package
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MGF1801B
MGF1801B,
23dBm
100mA
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MGF1601
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The
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MGF1601B
MGF1601B,
100mA
Pro54
MGF1601
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MGF1801BT
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package
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MGF1801BT
MGF1801BT
23dBm
100mA
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MGF1801
Abstract: IG200 mitsubishi microwave MGF1801BT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package
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MGF1801
MGF1801BT
MGF1801BT
23dBm
100mA
IG200
mitsubishi microwave
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LCD DISPLAY MODULE sharp LQ0
Abstract: sharp LQ0 FSP lcd power supply VU meter with LCD LQ038Q7DB03 X320 20 led VU meter transistor LCP-03011 FH23-61S-0
Text: PREPARED BY DATE APPROVED BY DATE S H A R P MOBILE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPECI FI C A T I O N S LCP-03011B SPEC No. FILE No. ISSUE : Jul. 11. 2003 PAGE : 22 pages Design Center MOBILE LCD Enterprise Development Center DEVICE SPECIFICATION FOR
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LCP-03011B
LQ038Q7DB03
8Q7DB03
LCP-03011
LCP-030
FH23-61S-0.
3SHAWC05)
240RGBX320
LCD DISPLAY MODULE sharp LQ0
sharp LQ0
FSP lcd power supply
VU meter with LCD
LQ038Q7DB03
X320
20 led VU meter transistor
FH23-61S-0
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Untitled
Abstract: No abstract text available
Text: Contents Features. 1 Cautions. 2 Pin Description. 3 S-4581A Pin Layout. 4
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S-4581A
S-4581A
-20aC
2tosc-20
4tosc-20
5-tosc-20
5-tosc-20
4tosc-20
-2tosc-20
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sharp LQ0
Abstract: LCD DISPLAY MODULE sharp LQ0 FF00251SS1 FF0251SS1 GS21 GS42 GS63 LQ036Q1DA01 VCOMdc tp
Text: PREPARED BY DATE A. OGINO Sep. 10. 2004 S CHECKED BY DATE T.OMORI Sep. 10. 2004 H A R SPEC No. LCP-04030B FILE No. ISSUE : September. 10. 2004 PAGE : 20 pages P MOBILE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION S P E C I FI C A T I O N S ' APPLICABLE DIVISION
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LCP-04030B
LQ036Q1DA01
LCP-04030
LCP-04030
4030A
04Dimensions)
LQ036Q1DA01
LCP-04030-1Ã
sharp LQ0
LCD DISPLAY MODULE sharp LQ0
FF00251SS1
FF0251SS1
GS21
GS42
GS63
VCOMdc tp
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mgf1908
Abstract: MGF1908A MGF1303B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1908A
MGF1908A
MGF1303B.
12GHz
mgf1908
MGF1303B
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F4310E
Abstract: F4314E mitsubishi application mg series gaas
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic
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F4310E
4310E
F4314E
MGF4318E
mitsubishi application mg series gaas
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E 212 fet
Abstract: MGF1801BT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package
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MGF1801BT
MGF1801BT
23dBm
100mA
E 212 fet
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