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HTC Korea LM2596HVGT-5.0 IC REG BUCK 3A TO220-5L
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DigiKey	LM2596HVGT-5.0	Tube	19,909		100	1 - 10 - 100 $2 1000 $2 10000 $2	Buy Now
TME	LM2596HVGT-5.0				1	1 $2.5 10 $1.97 100 $1.47 1000 $1.13 10000 $1.13	Get Quote
HTC Korea LM1501BGT-5.0 IC REG BUCK 5V 5A TO220-5L
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DigiKey	LM1501BGT-5.0	Tube	3,383		100	1 - 10 - 100 $1.6 1000 $1.6 10000 $1.6	Buy Now
Kyocera AVX Components 100B300GT500XT1K CAP CER 30PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B300GT500XT1K	Cut Tape	3,068		1	1 $9.39 10 $6.553 100 $5.0447 1000 $4.43084 10000 $4.43084	Buy Now
	100B300GT500XT1K	Digi-Reel	3,068		1	1 $9.39 10 $6.553 100 $5.0447 1000 $4.43084 10000 $4.43084	Buy Now
	100B300GT500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $4.23869 10000 $4.07948	Buy Now
Kyocera AVX Components 100B101GT500XT1K CAP CER 100PF 500V P90 1111
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DigiKey	100B101GT500XT1K	Cut Tape	2,745		1	1 $10.32 10 $7.246 100 $5.6088 1000 $4.9422 10000 $4.9422	Buy Now
	100B101GT500XT1K	Digi-Reel	2,745		1	1 $10.32 10 $7.246 100 $5.6088 1000 $4.9422 10000 $4.9422	Buy Now
	100B101GT500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $4.73358 10000 $4.56067	Buy Now
Kyocera AVX Components 100B200GT500XT1K CAP CER 20PF 500V P90 1111
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DigiKey	100B200GT500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $4.31108 10000 $4.14983	Buy Now
	100B200GT500XT1K	Cut Tape	1,000		1	1 $9.49 10 $6.636 100 $5.1169 1000 $4.4988 10000 $4.4988	Buy Now
	100B200GT500XT1K	Digi-Reel	1,000		1	1 $9.49 10 $6.636 100 $5.1169 1000 $4.4988 10000 $4.4988	Buy Now

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GT50 Datasheets (120)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-50	MCE / KDI	ATTENUATOR, PIN DIODE	Original	PDF
GT5010	GTRAN	transimpedance amplifier	Original	PDF
GT502F1K	US Sensor/Littelfuse	Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 5K OHM 10% BEAD	Original	PDF
GT503J1K	US Sensor/Littelfuse	Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 50K OHM 10% BEAD	Original	PDF
GT50G101	Toshiba	Discrete IGBTs	Original	PDF
GT50G102	Toshiba	Discrete IGBTs	Original	PDF
GT50G321	Toshiba	Discrete IGBTs	Original	PDF
GT50G321	Toshiba	TRANS IGBT CHIP N-CH 400V 50A 3(2-21F2C)	Original	PDF
GT50G321	Toshiba	Discrete IGBTs	Original	PDF
GT50G321	Toshiba	SILICON N CHANNEL IGBT	Scan	PDF
GT50G321	Toshiba		Scan	PDF
GT50G321(Q)	Toshiba	TRANS IGBT CHIP N-CH 400V 50A 3(2-21F2C)	Original	PDF
GT50J101	Toshiba	Discrete IGBTs	Original	PDF
GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
GT50J101	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
GT50J101	Toshiba	TRANSISTOR IGBT 50A 600V	Scan	PDF
GT50J102	Toshiba	Discrete IGBTs	Original	PDF
GT50J102	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Original	PDF
GT50J102	Toshiba	Discrete IGBTs	Original	PDF

GT50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
gt50j341 Abstract: No abstract text available Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)	Original	GT50J341 gt50j341	PDF
Untitled Abstract: No abstract text available Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT50J121	PDF
GT50MR21 Abstract: IGBT application notes Text: GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	GT50MR21 GT50MR21 IGBT application notes	PDF
gt50nr21 Abstract: gt50n Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	GT50NR21 gt50nr21 gt50n	PDF
Untitled Abstract: No abstract text available Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 • 電流共振インバータスイッチング専用注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長	Original	GT50JR22	PDF
Untitled Abstract: No abstract text available Text: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)	Original	GT50J342	PDF
GT50J301 Abstract: bipolar power transistor data toshiba set igbt on off Vge Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)	Original	GT50J301 GT50J301 bipolar power transistor data toshiba set igbt on off Vge	PDF
GT50J325 Abstract: No abstract text available Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT50J325 GT50J325	PDF
GT50J121 Abstract: GT50J325 Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT50J121 GT50J121 GT50J325	PDF
GT50J322 Abstract: No abstract text available Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)	Original	GT50J322 GT50J322	PDF
GT50J325 Abstract: No abstract text available Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT50J325 GT50J325	PDF
Untitled Abstract: No abstract text available Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	GT50NR21	PDF
gt50j322 Abstract: No abstract text available Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)	Original	GT50J322 gt50j322	PDF
50J328 Abstract: GT50J328 TF01S Text: GT50J328 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J328 単位 : mm ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 z 取り扱いが簡単なエンハンスメントタイプです。	Original	GT50J328 2-16C1C 50J328 2002/95/EC) 00A/s 50J328 GT50J328 TF01S	PDF

GT50J325 Abstract: No abstract text available Text: GT50J325 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	GT50J325 2-21F2C 20070701-JA GT50J325	PDF
IC-50A Abstract: GT50J322 2-21F2C Text: GT50J322 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J322 ○ 第 4 世代単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)	Original	GT50J322 2-21F2C 20070701-JA IC-50A GT50J322 2-21F2C	PDF
GT50J121 Abstract: GT50J325 Text: GT50J121 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	GT50J121 2-21F2C 20070701-JA GT50J121 GT50J325	PDF
Untitled Abstract: No abstract text available Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)	Original	GT50J341	PDF
gt50j325 Abstract: GT50J325 Toshiba Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	GT50J325 gt50j325 GT50J325 Toshiba	PDF
GT5010 Abstract: 457789 GTran SONET/OC-192 B102 STM-64 Text: Description The GT5010 is a high performance SiGe 12.5GB/s transimpedance amplifier IC designed for use in receiver modules for fiber optic transmission systems such as SDH STM-64 and SONET OC-192. It is also suitable for 12.5 Gb/s dual forward error correction	Original	GT5010 STM-64 OC-192. 457789 GTran SONET/OC-192 B102 STM-64	PDF
GT50JR21 Abstract: No abstract text available Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	GT50JR21 GT50JR21	PDF
GT50J102 Abstract: No abstract text available Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.	OCR Scan	GT50J102 961001EAA GT50J102	PDF
gt50j Abstract: No abstract text available Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2	OCR Scan	GT50J102 2-21F2C gt50j	PDF
GT50G102 Abstract: P channel 50A IGBT Text: GT50G102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TYPE STROBE FLASH APPLICATIONS Unit in mm 15.9 MAX, . High Input Impedance . High Speed 03.2±O.2 : tf=l.3 Js(Typ. . Low Saturation Voltage: VcE(sat)=4.0V(Max.)(Ic=50A) . Enhancement-Mode . Recommended Cm =650 h F	OCR Scan	GT50G102 GT50G102 P channel 50A IGBT	PDF

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GT50 Price and Stock

HTC Korea LM2596HVGT-5.0

HTC Korea LM1501BGT-5.0

Kyocera AVX Components 100B300GT500XT1K

Kyocera AVX Components 100B101GT500XT1K

Kyocera AVX Components 100B200GT500XT1K

GT50 Datasheets (120)

GT50 Datasheets Context Search

gt50j341

Untitled

GT50MR21

gt50nr21

Untitled

Untitled

GT50J301

GT50J325

GT50J121

GT50J322

GT50J325

Untitled

gt50j322

50J328

GT50J325

IC-50A

GT50J121

Untitled

gt50j325

GT5010

GT50JR21

GT50J102

gt50j

GT50G102