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    GTO 100A 500V Search Results

    GTO 100A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    100A474S10Y Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A474S4Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A484S4-5Y Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100A474S4-5Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation

    GTO 100A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO thyristor 4500V 4000A

    Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
    Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA


    Original     		PDF 500V/1500A FD1500BV-90DA 500V/500A FD500JV-90DA GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit

    DGT304SE13

    Abstract: GTO 100A 750V DGT304SE DS460 GTO 750V 100A AN4506
    Text: DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002 APPLICATIONS KEY PARAMETERS 700A ITCM VDRM 1300V IT AV 250A dVD/dt 500V/µs diT/dt 500A/µs • Variable speed A.C. motor drive inverters (VSD-AC)


    Original     		PDF DGT304SE13 DGT304SE DS4609-4 DGT304SE13 GTO 100A 750V DGT304SE DS460 GTO 750V 100A AN4506

    Untitled

    Abstract: No abstract text available
    Text: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT AV 240A • High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt 500A/µs


    Original     		PDF DGT305RE DS5519-2

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDL100N50F 238nC)

    FDL100N50F

    Abstract: FDL100N50 fdl100n
    Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDL100N50F 238nC) FDL100N50F FDL100N50 fdl100n

    FDH15N50

    Abstract: GTO 100A 500V
    Text: FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt


    Original     		PDF FDH15N50 FDP15N50 O-247 O-220 GTO 100A 500V

    marking 27A DIODE

    Abstract: FDH27N50 GTO 100A 500V
    Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Qg results in Simple Drive Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness


    Original     		PDF FDH27N50 O-247 marking 27A DIODE FDH27N50 GTO 100A 500V

    IRFP450A

    Abstract: diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet
    Text: IRFP450A 14A, 500V, 0.40 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		PDF IRFP450A O-247 IRFP450A diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet

    FDH27N50

    Abstract: No abstract text available
    Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness


    Original     		PDF FDH27N50 O-247 FDH27N50

    FDH44N50

    Abstract: No abstract text available
    Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness


    Original     		PDF FDH44N50 O-247 FDH44N50

    diode 8a 400v

    Abstract: IRF840A 125 diode diode MARKING A1 Marking 8A n-channel 250V power mosfet n-Channel mosfet 400v Package Marking 8A SWITCH-MODE
    Text: IRF840A 8A, 500V, 0.850 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		PDF IRF840A O-220AB diode 8a 400v IRF840A 125 diode diode MARKING A1 Marking 8A n-channel 250V power mosfet n-Channel mosfet 400v Package Marking 8A SWITCH-MODE

    FDH44N50

    Abstract: No abstract text available
    Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness


    Original     		PDF FDH44N50 O-247 FDH44N50

    irfp460a

    Abstract: irfp460a equivalent MOSFET IRFP460A
    Text: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		PDF IRFP460A O-247 100oC, irfp460a irfp460a equivalent MOSFET IRFP460A

    GTO 100A 500V

    Abstract: FDH15N50 TO-220 JEDEC FDP15N50
    Text: FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt


    Original     		PDF FDH15N50 FDP15N50 O-220 O-247 GTO 100A 500V TO-220 JEDEC FDP15N50

    Untitled

    Abstract: No abstract text available
    Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Requirement Qg results in Simple Drive • Uninterruptable Power Supply • Improved Avalanche and Dynamic dv/dt Ruggedness • High Speed Power Switching • Improved rDS ON


    Original     		PDF FDH44N50 O-247 FDH44N50 100oC,

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFW/I820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRFW/I820A

    IRF820A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRF820A O-220 IRF820A

    FDB15N50

    Abstract: fdb fairchild FDH15N50 FDP15N50
    Text: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt


    Original     		PDF FDH15N50 FDP15N50 FDB15N50 O-263AB FDB15N50 fdb fairchild

    IRF820S

    Abstract: diode Rl 257
    Text: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRF820S IRF820S diode Rl 257

    TRANSISTOR mosfet IRF840

    Abstract: IRF840 application note Switching Application of irf840
    Text: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TRANSISTOR mosfet IRF840 IRF840 application note Switching Application of irf840

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U420A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original     		PDF IRFR/U420A

    FDB15N50

    Abstract: FDH15N50 FDP15N50
    Text: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt


    Original     		PDF FDH15N50 FDP15N50 FDB15N50 O-263AB FDB15N50

    UFN450

    Abstract: UFN451 UFN453 GTO 100A 500V
    Text: UNITRODE CORP TS 9347963 UN I T R O D E DE^I T 3 4 7 citi3 □ □ l ü b cm 7 CORP 92D |~ D 10690 POWER MOSFET TRANSISTORS UFN450 UFN451 UFN452 UFN453 500 Volt, 0.4 Ohm N-Channel T ' 3^/3 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling


    OCR Scan     		PDF UFN450 UFN451 UFN452 UFN453 UFN451 UFN450 UFN453 GTO 100A 500V