5SDF08F4505
Abstract: PULSE16
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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08F4505
08F4505
08F4005
1768/138a,
DM/201/06
Jul-10
5SDF08F4505
PULSE16
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Untitled
Abstract: No abstract text available
Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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04T4504
827C-360-45
04T4504
04T4004
1768/138a,
DM/277/08
Jul-10
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Untitled
Abstract: No abstract text available
Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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04D4504
04D4504
04D4004
1768/138a,
DM/219/06
Jul-10
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Untitled
Abstract: No abstract text available
Text: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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06T3004
827C-620-30
06T3004
06T2504
1768/138a,
DM/276/08
Jul-10
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5SDF 08F4505
Abstract: abb S 08f45
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807
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Original
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08F4505
1768/138a,
DM/201/06a
Aug-11
08F450A
Aug-11
5SDF 08F4505
abb S
08f45
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Untitled
Abstract: No abstract text available
Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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Original
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PDF
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08T4505
818C-800-45
08T4505
08T4005
1768/138a,
DM/218/06
Jul-10
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Untitled
Abstract: No abstract text available
Text: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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12T3005
818C-1200-30
12T3005
12T2505
1768/138a,
DM/266/08of
DM/266/08
Jul-10
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5SDF12F3005
Abstract: dm265
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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PDF
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08
Jul-10
5SDF12F3005
dm265
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Untitled
Abstract: No abstract text available
Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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06D3004
06D3004
06D2504
1768/138a,
DM/267/08
Jul-10
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Untitled
Abstract: No abstract text available
Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858
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Original
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04T4504
827C-360-45
1768/138a,
DM/277/08a
Aug-11
04T450A
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5SDF 12T2505
Abstract: 5sDF12t2505
Text: 5SDF 12T2505 5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters
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12T2505
818C-1200-25
1768/138a,
DM/266/08b
Nov-12
Nov-12
5SDF 12T2505
5sDF12t2505
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5SDF 12F2505
Abstract: 12F2505 dm265
Text: 5SDF 12F2505 5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters
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12F2505
1768/138a,
DM/265/08b
Nov-12
Nov-12
12F2505
5SDF 12F2505
dm265
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5SDF06D2504
Abstract: abb 800
Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196
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06D2504
1768/138a,
DM/267/08a
Aug-11
06D250A
Aug-11
5SDF06D2504
abb 800
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5SDF12F3005
Abstract: dm265 12F3
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195
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Original
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PDF
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08a
Aug-11
Aug-11
5SDF12F3005
dm265
12F3
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Untitled
Abstract: No abstract text available
Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT
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Original
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PDF
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04D4504
1768/138a,
DM/219/06a
Aug-11
04D4504A
Aug-11
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06T2504
Abstract: 5SDF06T2504
Text: 5SDF 06T2504 5SDF 06T2504 Old part no. DM 827C-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196
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Original
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PDF
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06T2504
827C-620-25
1768/138a,
DM/276/08a
Aug-11
06T25A
06T2504
5SDF06T2504
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5SDF 08T4505
Abstract: No abstract text available
Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807
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Original
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PDF
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08T4505
818C-800-45
1768/138a,
DM/218/06a
Aug-11
08T45A
5SDF 08T4505
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ABB inverter motor fault code
Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
Text: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a
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1352C-PIUS
1352C-6
P/N146071
ABB inverter motor fault code
Bus Bar torque value table for metric bolts
wg9017d2g
CSG2001-14A04
2.5 kva inverter diagrams
thyristor CSG2001-14A04
TOSHIBA S6475R
WG9013A3A
Bus Bar torque for metric bolts
3.5 kva inverter circuits
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GTO thyristor
Abstract: GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO
Text: , A B B S E M I C O N D U C TORS Asymmetric GTO Thyristors AG 001bß3ö 0000036 1 B A B B _ _ 3 6 E J>. Asymmetrische GTO Thyristoren Free-floating silicon High-dynamic voltage capability at turn-off Low on-state and switching losses Coaxial gate leads soldered
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Q000Q36
Vorm815
GTO thyristor
GTO ABB
ABB GTO CSG
THYRISTOR GTO
GTO thyristor ABB
abb ys thyristor
CSG-601
THYRISTOR DE PUISSANCE
601-25-A
ABB GTO
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ABB thyristors
Abstract: IGCT U15-16 thyristoren
Text: S H O R T F O R M C A T A L O G U E High Power Sem iconductors 2 Q Q 0 Hochleistungshalbierter Contents Inhalt IGBTs IGBTs IG B T 6- 7 IGCTs IGCTs IG C T 8- 9 GTO Thyristors GTO Thyristoren G TO Phase Control Thyristors Netzthyristoren * BCTs BCTs BCT Fast Sw itching Thyristors
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5SDD71B0200
Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
Text: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.
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VRRM/100V
01R2501
01R2502
001bfi3fl
Fig-10
3x100
45x100
5SDD71B0200
stud type diodes
ABB GTO
R2501
08F4500
71B0200
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05D2500
Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.
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15F2502
5D25DQ
01R2501
01R2501
20H2501
05D2500
11F2500
01R25D1
25H25C1
GTO ABB
GTO gate drive unit
ABB GTO gate unit
ABB GTO
30L2501
25H2501
05D250
5SDF
GTO 6.5 KV
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R2501
Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
Text: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches
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VRRM/100V
01R2501
5SDF01R2502
14urer
3x100
45x100
R2501
01R25
71B0200
ABB GTO
ci d 4800
r2503
08F4500
b0200
5SDF
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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15F2502
15F2502
05D2501
01R2501
20H2501
05D2501
11F2501
25H2501
ABB 5SGA
2sh25
GTO ABB
GTO gate drive unit
2SH2501
TJM 10
5sga 20h2501
ABB GTO
R2501
5SGA 15F2502
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