HCF4066BE
Abstract: DD 127 D transistor transistor abe 310
Text: f Z T ^7# S G S -T H O M S O N IMD gl lllI(gTO@M(5S HCC/HCF4066B QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS . 15V DIGITAL OR ± 7.5V PEAK-TO-PEAK SWITCHING . 80Q TYPICAL ON RESISTANCE FOR 15V OPERATION . SWITCH ON RESISTANCE MATCHED TO
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HCC/HCF4066B
10kHz,
10pATYP.
PLCC20
HCF4066BE
DD 127 D transistor
transistor abe 310
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circuit diagram of home automation using dtmf
Abstract: LTS542R lts542 HL74HCTLS02 lts542R pin diagram KT3170 home automation using dtmf ks58006 LTS542R DATASHEET GTO analog device
Text: LOW POWER DTMF RECEIVER S5T3170 INTRODUCTION 18−DIP−300A The S5T3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the SwitchedCapacitor Filter technology. This LSI consists of band split filters, which separates counting section which verifies the frequency and
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S5T3170
18-DIP-300A
S5T3170
20-SOP-375
579545MHz
circuit diagram of home automation using dtmf
LTS542R
lts542
HL74HCTLS02
lts542R pin diagram
KT3170
home automation using dtmf
ks58006
LTS542R DATASHEET
GTO analog device
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lts542R
Abstract: circuit diagram of home automation using dtmf lts542 HL74HCTLS02 ks58006 home automation using dtmf lts542R pin diagram KT3170 count GTO LTS542R DATASHEET
Text: LOW POWER DTMF RECEIVER S5T3170 INTRODUCTION 18−DIP−300A The S5T3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the SwitchedCapacitor Filter technology. This LSI consists of band split filters, which separates counting
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S5T3170
18-DIP-300A
S5T3170
20-SOP-375
579545MHz
lts542R
circuit diagram of home automation using dtmf
lts542
HL74HCTLS02
ks58006
home automation using dtmf
lts542R pin diagram
KT3170
count GTO
LTS542R DATASHEET
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lts542
Abstract: kt3170 lts542R circuit diagram of home automation using dtmf HL74HCTLS02 KS58006 lts542R pin diagram home automation using dtmf DTMF Receiver tone control circuit
Text: KT3170 LOW POWER DTMF RECEIVER INTRODUCTION 18-DIP-300A The KT3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band split filters, which seperates
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KT3170
18-DIP-300A
KT3170
579545MH
lts542
lts542R
circuit diagram of home automation using dtmf
HL74HCTLS02
KS58006
lts542R pin diagram
home automation using dtmf
DTMF Receiver
tone control circuit
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3528 20pin
Abstract: AD9688 AD9688BQ AD9688TE AM6688 20pin 4bit adc 175-200MHZ ladder logic analog devices
Text: High Speed 4-Bit Monolithic ADC ANALOG DEVICES □ AD9688 FEA TURES 200MSPS Encode Rate 7-Bit Differential Linearity Bipolar Input Range Wide Input Range —2.7V to +3.0V AD9688 F U N C T IO N A L B LO CK D IAGRAM APPLICATIONS Digital Radio Electronic Warfare ECM, ECCM, ESM
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AD9688
200MSPS
AM6688.
0625LSB
AD9688s
3528 20pin
AD9688BQ
AD9688TE
AM6688
20pin 4bit adc
175-200MHZ
ladder logic analog devices
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Untitled
Abstract: No abstract text available
Text: ANALOG Fast, Complete Sampling 12-Bit A/D Converter DEVICES_ with Microprocessor Interface □ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ AD678 1.1 Scope. This specification covers the detail requirements for a 12-bit resolution A/D converter with complete
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12-Bit
AD678
AD678S
/883B
AD678T
ADI-M-1000:
28-Pin
44-Pin
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Untitled
Abstract: No abstract text available
Text: MT9044 @ M ITEL T1/E1/0C3 System Synchronizer S E M IC O N D U C T O R Prelim inary Inform ation Features DS5058_ISSUE 1_ December 1998 S electable 1,544M Hz, 2.048M H z or 8kHz input reference signals • Provides C 1 .5, C2, C3, C4, C6, C8, C16, and
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MT9044
DS5058_
-1244-C
300ta
MT9044.
300ns.
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KT3170
Abstract: Samsung tv remote control circuit diagram circuit diagram of home automation using dtmf home automation using dtmf
Text: KT3170 CMOS INTEGRATED CIRCUIT LOW POWER DTMF RECEIVER The KT3170 is a complete Dual Tone Multiple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band sp lit filters, which separates
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KT3170
KT3170
V00/V
579545MHz
Samsung tv remote control circuit diagram
circuit diagram of home automation using dtmf
home automation using dtmf
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CBIC-U
Abstract: SCR GTO 100 amp 1000 volt GTO IGBT DRIVER Analog Devices IGBT PNP
Text: A T & T MELEC I C 25E D • 005002b 0002575 2 ■ AT&T’S CUSTOM DESIGN CAPABILITIES: BCDMOS AND CBIC Q Using our latest technologies, custom designed integrated circuits can be created to meet the criteria of your most complex applications. As opposed to off-the-shelf devices, AT&T custom circuits offer several inherent advantages,
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005002b
struct80
CBIC-U
SCR GTO
100 amp 1000 volt GTO
IGBT DRIVER Analog Devices
IGBT PNP
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home automation using mobile dtmf
Abstract: KT3170 home automation using dtmf circuit diagram of home automation using dtmf
Text: KT3170 LOW POWER DTMF RECEIVER INTRODUCTION 18-CXP-300A The KT3170 is a complete Dual Tone MutUple Frequency DTMF receiver that is fabricated by low power CMOS and the Switched-Capacitor Filter technology. This LSI consists of band split Alters, which separates
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KT3170
18-CXP-300A
KT3170
home automation using mobile dtmf
home automation using dtmf
circuit diagram of home automation using dtmf
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DS5058
Abstract: No abstract text available
Text: @ MT9044 M ITEL T1/E1/0C3 System Synchronizer Prelim inary Inform ation S E M IC O N D U C T O R Features DS5058_ ISSUE 1_ D ecem ber 1998 S electable 1,544M Hz, 2.048M H z or 8kHz input reference signals • Ordering Information
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MT9044
DS5058_
-1244-C
TR62411
DS5058
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p1087
Abstract: No abstract text available
Text: P1087 P1087 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. TO-92 D S G Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDG
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P1087
P1087
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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hall 04E
Abstract: dar PLUS transformer shaded pole motor TROUBLESHOOTING GUIDE PD GTO gate drive unit mitsubishi 630F660 lug ucm m4 semiconductors cross index DMS 800 cabinet mitsubishi dc motor crane GTO gate drive unit westcode
Text: aUEH-BRADLEÏ B„He«n1352C-5.3SV*«em M anual Installation a n d M a in t e n a a c e »»B » iatkilri8Bi fes'#* M M m ^^ !!!!#^ Important User Information Because of the variety of uses for this equipment and because of the
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1352C-5
hall 04E
dar PLUS transformer
shaded pole motor TROUBLESHOOTING GUIDE PD
GTO gate drive unit mitsubishi
630F660
lug ucm m4
semiconductors cross index
DMS 800 cabinet
mitsubishi dc motor crane
GTO gate drive unit westcode
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mpf102 equivalent
Abstract: MPF102 MPF102 Transistor MPF102 circuit application
Text: MPF102 TO-92 G SD N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value
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MPF102
mpf102 equivalent
MPF102
MPF102 Transistor
MPF102 circuit application
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Untitled
Abstract: No abstract text available
Text: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source
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BF246B
BF246B
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Untitled
Abstract: No abstract text available
Text: 74VHC4066 Quad Analog Switch tm Features General Description • Typical switch enable time: 15ns These devices are digitally controlled analog switches utilizing advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low “OFF” leakages. They are bidirectional switches, thus any analog
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74VHC4066
74VHC)
74HC4066
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MMBFJ270
Abstract: I8 SOT23 process 88
Text: MMBFJ270 MMBFJ270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. G S SOT-23 D Mark: 61S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBFJ270
OT-23
MMBFJ270
I8 SOT23
process 88
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BF246B
Abstract: J111
Text: BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process 51. • See J111 for characteristics. TO-92 DGS 1. Drain 2. Gate 3. Source
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BF246B
BF246B
J111
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Untitled
Abstract: No abstract text available
Text: MMBFJ270 MMBFJ270 P-Channel Switch G • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. S SOT-23 D Mark: 61S 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBFJ270
OT-23
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BF247A
Abstract: No abstract text available
Text: BF247A N-Channel Amplifier • • This device is designed primarily forelectronic switching applications such as low on resistance analog switching. Sourced from process 51. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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BF247A
BF247A
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J270
Abstract: process 88
Text: J270 J270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. TO-92 1 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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Untitled
Abstract: No abstract text available
Text: 74VHC4316 Quad Analog Switch with Level Translator tm Features General Description • Typical switch enable time: 20ns These devices are digitally controlled analog switches implemented in advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low
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74VHC4316
74VHC4316
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74HC4066
Abstract: 74VHC 74VHC4066 74VHC4066M 74VHC4066MTC J-STD-020B M14A MTC14 CMOS 4066 application note
Text: 74VHC4066 Quad Analog Switch Features General Description • Typical switch enable time: 15ns These devices are digitally controlled analog switches utilizing advanced silicon-gate CMOS technology. These switches have low “ON” resistance and low “OFF” leakages. They are bidirectional switches, thus any analog
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74VHC4066
74VHC4066
74HC4066
74VHC
74VHC4066M
74VHC4066MTC
J-STD-020B
M14A
MTC14
CMOS 4066 application note
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