Untitled
Abstract: No abstract text available
Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA [email protected] Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.
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DE-FG02-07ER84712)
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SIEMENS capacitor axial
Abstract: capacitor Matsushita RS gto datasheet B25556-J3905-K003 Siemens matsushita capacitor dc 5100
Text: MPK DC Capacitors GTO Clamping B 25 556 Extremely low self-inductance High volumetric efficiency Construction Self-healing Plastic and paper dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable contacting ● Fully insulated case
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B25556-J3905-K003
SIEMENS capacitor axial
capacitor Matsushita RS
gto datasheet
B25556-J3905-K003
Siemens matsushita capacitor
dc 5100
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PTC 8750
Abstract: B25856-K1405-K003 B25856-K7255-K003 gto 2400 capacitor B25856K0155K003 B25856-K4105-K003 B25856-K3104-K003 B25856K2405K003 VDE0560 B25856K0205K003
Text: MKV AC Capacitors GTO Snubbering and Clamping B 25 856 High dielectric strength High peak-current capability Extremely low inductance Construction Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable
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CCSTA14N40
Abstract: FP4651 Solidtron gto thyristor SCR 957
Text: CCSTA14N40 N-Type, ThinPakTM Preliminary Data Sheet Description Package This current controlled Solidtron CCS discharge switch is an ntype Thyristor in a high performance ThinPakTM package. The device gate is similar to that found on a traditional GTO Thyristor.
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CCSTA14N40
302oC
63pb/37sn
63pb/37sn
260oC
CCSTA14N40
FP4651
Solidtron
gto thyristor
SCR 957
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A796
Abstract: No abstract text available
Text: A796 53mm Fast Recovery DIODE 1500 - 2500V The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with
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00A/us
A796
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SCR GTO
Abstract: RC firing circuit FOR SCR SCR Gate Drive scr RC snubber design dc circuit breaker using SCR gto firing circuit SCR 6 pulse Gate Drive selen scr latching RC snubber scr design inductive load
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 2.0 POW-R-BLOK Module Mounting Figure 2.1 SCR/GTO/Diode POW-R-BLOK™ Modules Application Information Mounting Screw Fastening Pattern ➃ When mounting POW-R-BLOK™ modules to a heatsink, care
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A796
Abstract: No abstract text available
Text: A796 53mm Fast Recovery DIODE 1500 - 2500V SPCO The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with
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forwar10
00A/us
A796
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gto 2400 capacitor
Abstract: Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004
Text: MKV AC Capacitors GTO Snubbering and Clamping B 25 855 High rate of voltage rise High peak-current capability Extremely low inductance Construction ● ● ● ● ● ● ● ● Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable
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B25855-C2255-K004
gto 2400 capacitor
Siemens matsushita capacitor
B25855C1305K004
ISO 4035
B25855-C7106-K004
B25855C3105
B25855C3155K004
siemens CAPACITOR 40/085/56
B25855C8106K004
B25855C8205K004
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1000A 100V power diode
Abstract: DIODE 1000a 1000A diode 4500v SDD63HK
Text: SDD63HK 4500V Snubber Diode SPCO The SDD63HK fast recovery diode is designed for use in complex snubber circuits commonly used for gate turn-off thryistors, GTO’s, for which the low forward recovery voltage developed by the diode at extremely high di/dt is important in order to achieve full turn-off capability. It is manufactured by the
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SDD63HK
SDD63HK
1000A 100V power diode
DIODE 1000a
1000A diode
4500v
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SDD63HK
Abstract: 1000A 100V power diode DIODE 1000a 5 ohm resistor 4500v 1000A diode
Text: SDD63HK 4500V Snubber Diode The SDD63HK fast recovery diode is designed for use in complex snubber circuits commonly used for gate turn-off thryistors, GTO’s, for which the low forward recovery voltage developed by the diode at extremely high di/dt is important in order to achieve full turn-off capability. It is manufactured by the
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SDD63HK
SDD63HK
1000A 100V power diode
DIODE 1000a
5 ohm resistor
4500v
1000A diode
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ABB inverter motor fault code
Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
Text: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a
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1352C-PIUS
1352C-6
P/N146071
ABB inverter motor fault code
Bus Bar torque value table for metric bolts
wg9017d2g
CSG2001-14A04
2.5 kva inverter diagrams
thyristor CSG2001-14A04
TOSHIBA S6475R
WG9013A3A
Bus Bar torque for metric bolts
3.5 kva inverter circuits
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THYRISTOR GTO
Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
Text: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.
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SDG250
500V/2500A
SDG250
6RT411
SDG250HK
SDG250HH
4400rn-off
00A/us,
THYRISTOR GTO
rkm THYRISTOR GTO
rkm v
SDG250HB
SDG250HD
SDG250HF
600a thyristor gate turn off
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GTO thyristor
Abstract: SKGH thyristor tt 31 1600 thyristor TT 110A GTO MODULE
Text: ISE 0 I 813U.71 0001SQ5 3 | S^MIKRON.INC V drm V V rrm V 800 1000 1200 1400 1600 15 15 15 15 15 T k .Z3 seMIKRDn SEMIPACK 3 GTO Thyristor/ Diode Modules SKGH 500/08 SKGH 500/10 SKGH 500/12 SKGH 500/14 SKGH 500/16 SKGH500 GTO thyristor data Symbol SKGH 500
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0001SQ5
SKGH500
000A/1800A
650A/1500A
GTO thyristor
SKGH
thyristor tt 31 1600
thyristor TT 110A
GTO MODULE
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Untitled
Abstract: No abstract text available
Text: A N A LO G D E V IC E S ±1 g to ±5 g Single Chip Accelerometer with Signal Conditioning ADXL05* FEATURES 5 milli-0 Resolution Noise Level 12x Less than the ADXL50 User Selectable Full Scale from ±1 gto ±5 g Output Scale Selectable from 200 m V /gto 1 V/p
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ADXL05*
ADXL50
ADXL05
ADXL05
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4n29 Motorola
Abstract: 4T-05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA <Ê> «1 C ; ® ® ® ® VDE UL CSA SEMKO DEMKO NEMKO se n BAST GlobalOptolsolator 6 -Pin D IP O p to lso la to rs D arlin gto n O utput The 4N29/A, 4N30,4N31,4N320 and 4N33 1) devices consist of a gallium arsenide Infrared emitting diode optically coupled to a monolithic silicon
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4N29/A,
4N320)
4N29A
4n29 Motorola
4T-05
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sbl 20100
Abstract: T425-X25S MEMAD11 inmos transputer T425
Text: ^•7 # DMD g(fii ilL[l(gTO©[i!!in(gI / = T S G S -T H O M S O N IM S T 4 2 5 32-bit transputer FEATURES ■ 32 bit architecture ■ 40 ns internal cycle time ■ 25 MIPS peak instruction rate ■ Pin compatible with IMS T805, IMS T800, IMS T400 and IMS T414
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32-bit
sbl 20100
T425-X25S
MEMAD11
inmos transputer T425
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4n32
Abstract: 4N33 Motorola
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
4n32
4N33 Motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Photo Detector MRD360 D arlin gto n O u tp u t M o to ro la Preferred Device The M R D 3 6 0 ¡s designed for applications requiring very high radiation sensitivity at low light levels. PHO TO DETECTOR D A R L IN G T O N O U T P U T
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MRD360
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h22b1
Abstract: H21B1 typical circuit
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H21B1 H 21B2 H 21B 3 Slotted Optical Switches Darlington Output T h e se devices each co n sist of a galliu m arse nid e infrared em itting d iod e facing a sili con N P N p ho to d arlin gto n in a m old e d plastic h o u sin g. A slot in the h o u sin g betw een the
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H21B1
H22B1
H21B1 typical circuit
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MOC119
Abstract: VDE0160 VDE0832 VDE0833 IEC-204
Text: MOTOROLA H S E M IC O N D U C TO R TECHNICAL DATA M O C 119 6 -P in D IP O p to is o la to r Darlington Output T h is device c o n s is ts of a galliu m arse n id e infrared em itting d iod e optica lly c o u p le d to a m on o lith ic silic on p h o to d a rlin gto n detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
30A-02
MOC119
VDE0160
VDE0832
VDE0833
IEC-204
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Untitled
Abstract: No abstract text available
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 6 -Pin D IP O p to is o la to r D a rlin gto n O u tpu t T h is d e v ic e c o n s is t s o f a g a lliu m a r s e n id e in fra re d e m itt in g d io d e o p t ic a lly c o u p le d to a m o n o lit h ic s ilic o n p h o t o d a r lin g t o n detector.
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30A-02
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2n6800
Abstract: saft rectifier
Text: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô
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2N6800
2N6799
2N6800
saft rectifier
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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GD1D572
2N6797
2N6798
1347Tk
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F312
Abstract: F312U
Text: UNITROD E CORH 9347963 ~ ^ DE | =1 3 4 7 ^ 3 QGlOflS? b U N I T R O D E CORP 92D 10857 D f ^ ’O l POWER IVIOSFET TRANSISTORS ^ nfI u 400 Volt, 3.6 Ohm UFNF312 UFNF313 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling » No Second Breakdown
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UFNF312
UFNF313
T347c
UFNF310
UFNF311
F312
F312U
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