GTO THYRISTOR ABB Search Results

GTO THYRISTOR ABB Result Highlights (4)

Part	Manufacturer	Description
CA3079	Rochester Electronics LLC	CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059-G	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
P104	Coilcraft Inc	Silicon Controlled Rectifier,

GTO THYRISTOR ABB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static	Original	40L4502 40L4502 CH-5600	PDF
30J4502 Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static	Original	30J4502 30J4502 CH-5600 capacitor abb 5sgf30j4502 GTO thyristor ABB	PDF
GTO Snubber Capacitor Abstract: 30J60 Text: Key Parameters VDRM = 6000 ITGQM = 3000 ITSM = 24 VT0 = 1.70 rT = 0.60 VDClink = 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 April 98 Features The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter non-shorted anode GTO	Original	30J6004 30J6004 CH-5600 GTO Snubber Capacitor 30J60	PDF
40L4502 Abstract: 123500 Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO	Original	40L4502 40L4502 CH-5600 123500	PDF
ABB EA 200 Abstract: reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR Text: Key Parameters Vdrm = 4500 V Itgqm = 3000 A Itsm = II o1 > ^DClink 5SGR 30L4502 24 kA 1.9 V = 0.7 m i 2800 V rT Reverse Conducting Gate turn-off Thyristor Doc. No. 5SYA 1216-02 Feb.97 Features The 5SGR 30L4502 is a 91 mm buffered layer, reverse-conducting GTO offering low lGT as	OCR Scan	30L4502 30L4502 CH-5600 ABB EA 200 reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR	PDF
GTO thyristor Curve properties Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1 Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by	Original	30J4502 35L4502 GTO thyristor Curve properties ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1	PDF
GTO hvdc thyristor Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives	Original	5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB	PDF
thyristor Q 720 Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200 Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor	Original	1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200	PDF
reverse-conducting thyristor Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate	Original	MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor	PDF
GTO thyristor Abstract: GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO Text: , A B B S E M I C O N D U C TORS Asymmetric GTO Thyristors AG 001bß3ö 0000036 1 B A B B _ _ 3 6 E J>. Asymmetrische GTO Thyristoren Free-floating silicon High-dynamic voltage capability at turn-off Low on-state and switching losses Coaxial gate leads soldered	OCR Scan	Q000Q36 Vorm815 GTO thyristor GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO	PDF
Untitled Abstract: No abstract text available Text: A S E A BROUN/ABB D • ñ3 SEMICON 004Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor	OCR Scan	0QQD503 5x10DIN7985	PDF
IGCT Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT Text: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the	Original	ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT	PDF
Abb breakover diode Abstract: IGCT thyristor ABB IGCT ABB thyristor modules symmetric IGCT GTO thyristor ABB ABB 5STP 5SDD 5SBB20T 5sbb20 5sbb Text: P A R T N U M B E R I N G S T R U C T U R E & _ O R D E R I N G _C O D E LoPak 5SN S 0200 V 12 0 000 P ro d u ct G roup -5SN = IGBT Module C o n fig u ra tio n -S = Six-pack Module	OCR Scan		PDF
Halbleiterbauelemente DDR Abstract: information applikation mikroelektronik Heft 12 information applikation mikroelektronik applikation heft VEB mikroelektronik mikroelektronik DDR Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft Text: r ï n i k a r ^ e l e l - c Information Applikation t e n a n î l - c m [ n r L ü ^ i s i î s t e k t e n a r i i k Information Applikation HEFT 3 4 : H A LBLEITER V EN TILE und LEISTU N GSELEKTRO N IK v»bmikrooloVtronîk.kartItebknefchtiBtfthnnddtf imvobNombinfttmitiroeloktronik	OCR Scan		PDF

PS51259-AP Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h Text: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,	Original	24P2Q 16pin 225mil 16P4X 300mil PS51259-AP induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h	PDF
gto Gate Drive Abstract: gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 30 1.17 0.31 2800 V A kA V Gate turn-off Thyristor 5SGT 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1215-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	30J4502 30J4502 CH-5600 gto Gate Drive gto Gate Drive circuit GTO thyristor ABB GTO ABB thyristor 5 GTO ABB	PDF
CSG3001-18A04 Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power	Original	400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04	PDF
abb 2040 Abstract: No abstract text available Text: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	30J2501 5SYA1213-02 CH-5600 abb 2040	PDF
ABB thyristor 5 Abstract: cosmic GTO thyristor ABB 30J250 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	30J2501 CH-5600 ABB thyristor 5 cosmic GTO thyristor ABB 30J250	PDF
GTO thyristor ABB Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses	Original	30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5	PDF
GTO thyristor Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	40L4502 40L4502 CH-5600 GTO thyristor ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB	PDF
ABB thyristor 5 Abstract: GTO ABB GTO thyristor ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 6000 3000 24 1.70 0.60 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	30J6004 30J6004 CH-5600 ABB thyristor 5 GTO ABB GTO thyristor ABB	PDF
RCD snubber Abstract: ABB GTO gate unit Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 600 3x103 1.9 3.5 2800 V A A V mW V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Doc. No. 5SYA1236-00 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses	Original	06D4502 5SYA1236-00 CH-5600 RCD snubber ABB GTO gate unit	PDF
vt 1202 Abstract: ABB thyristor 5 IP350K gto 5sga Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	30J4502 CH-5600 vt 1202 ABB thyristor 5 IP350K gto 5sga	PDF

GTO THYRISTOR ABB Search Results

GTO THYRISTOR ABB Result Highlights (4)

GTO THYRISTOR ABB Datasheets Context Search

Untitled

30J4502

GTO Snubber Capacitor

40L4502

ABB EA 200

GTO thyristor Curve properties

GTO hvdc thyristor

thyristor Q 720

reverse-conducting thyristor

GTO thyristor

Untitled

IGCT

Abb breakover diode

Halbleiterbauelemente DDR

PS51259-AP

gto Gate Drive

CSG3001-18A04

abb 2040

ABB thyristor 5

GTO thyristor ABB

GTO thyristor

ABB thyristor 5

RCD snubber

vt 1202