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    IXYS Corporation IXGY2N120

    IGBT Transistors 2 Amps 1200V 3 Rds
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    GY 747 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RESISTANCE RS71Y

    Abstract: rb 57 sfernice
    Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book THICK FILM, METAL FILM AND WIREWOUND TECHNOLOGIES VISHAY SFERNICE VSE-DB0098-1002 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    VSE-DB0098-1002 RESISTANCE RS71Y rb 57 sfernice PDF

    E9AF-14A624-AA

    Abstract: 71001fb 74003pc bosch Mass Air Flow Sensor bosch maf sensor intel p8061bh Bosch MAF 74001mc p8061bh ford eec V
    Text: EECtechnical.doc . 11.20.97 Technical Notes on The EEC-IV MCU Compiled by Tom Cloud <[email protected]> (all fonts are Courier New) (The information supplied here was gotten through researching e-mail correspondence, technical publications and from information given to the author. If it helps you, great!


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    circuit diagram of smps dell

    Abstract: FQPF 8 N 60 FI selic 74XX AN38 IBM8514 LTC1059 LTC1164 PS12
    Text: L irm TECHNO LO GY A p p licatio n Note 38 February 1990 FilterCAD User's M anual, Version 100 Software Written By: Richard Zarr Colin Hsi Applications and Algorithms: Nello Sevastopoulos Philip Karantzalis Richard Markell M anual Written By: David Doty Edited By: Richard Markell


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    AN38-1 AN38-2 circuit diagram of smps dell FQPF 8 N 60 FI selic 74XX AN38 IBM8514 LTC1059 LTC1164 PS12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWINC IS UNPUBLISHED. COPYRIGHT 13 RELEASED FOR PUBLICATION flV AMP INCORPORATED. , 19 LOC AF ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR L DESCRIPTION DATE REDRAWN PER O L10 -0 0 5 3 -9 6 DWN APVD 11/NOV/96 PF GY D D 1 CONTINUOUS 2\ 0.002032 STRIP


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    11/NOV/96 QQ-N-290. 27JUN96 t21J2/dwg21 PDF

    9Q20

    Abstract: No abstract text available
    Text: 3.3V CMOS 20-BIT FLIP-FLOP WITH 3-STATE OUTPUTS AND BUS-HOLD life IDT74ALVCH16721 Integrated D e v ic e T ech n o lo gy , l i e . DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015;


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    20-BIT IDT74ALVCH16721 250ps MIL-STD-883, 200pF, 635mm IDT74ALVCH16721 9Q20 PDF

    ks0066f00

    Abstract: KS0066F59 KS0066F06 KS0066F0 KS0066F
    Text: KS0066 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER 80 QFP The K S 0 0 6 6 is a d ot matrix LCD driver & contro lle r LSI w hich is fabricated by low pow e r C M O S tech n olo gy. FUNCTION • C haracter type dot m atrix LCD driver & controller


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    KS0066 32kinds S0066F00, ks0066f00 KS0066F59 KS0066F06 KS0066F0 KS0066F PDF

    CHN 219

    Abstract: CHN 747 CTSD09SA-07214-ODW CTSD09SA-06815-ODW CHN 227
    Text: Dual Polarized 9 0 0 MHz Panel A ntennas im portance. C TSD 900 Panel A ntennas from A ndrew are designed fo r m odern cellu la r base stations. New M icrostrip te chn olo gy brings high perform ance and a trim profile enhances antenna aesthetics. Dual Polarization allows for receive diversity w itho ut the


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    PDF

    GD4022B

    Abstract: johnson counter
    Text: GOLDSTAR TECHNOLO GY INC-, D4E D | 4D2S7S7 □□□It.SD 7 4028 757 G O L D S T A R TECHNO L O G Y INC. 04E 01650 D T-Vf-13-11 GD4022B 4-STAGE DIVIDE-BY-8 JOHNSON COUNTER DESCRIPTION — The 4022B is a 4-Stage Divide-by - 8 Johnson Counter w ith eight glitch free active


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    T-Vf-13-11 GD4022B 4022B GD4022B johnson counter PDF

    KS0066i

    Abstract: ks0066f00 KS0066FOO 0066F00 marking code AAAE zbv m1 0065B KS0066F03 MARKING CODE JN KS0066F
    Text: KS0066 CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER 80 QFP The K S 0 0 6 6 is a d ot m atrix LCD d river & co n tro lle r LSI w hich is fab rica ted by low p o w e r C M O S tech n olo gy. FUNCTION • C haracter type dot m atrix LCD driver & controller


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    KS0066 32kinds 0066F00, KS0066i ks0066f00 KS0066FOO 0066F00 marking code AAAE zbv m1 0065B KS0066F03 MARKING CODE JN KS0066F PDF

    DM-60

    Abstract: No abstract text available
    Text: 2, 4, 8 M E G X 72 N O N B U F F E R E D D R A M DIMMs MICRON I TECHNO LO GY, INC. MT9LD272A X MT18LD472A(X) MT36LD872A(X) DRAM MODULE FEATURES * * * * * * * * * * * JED EC eight CAS#, EC C pinout in a 168-pin, dual-inline memory module (D IM M ) 16M B (2 Meg x 72), 32MB (4 Meg x 72),


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    MT9LD272A MT18LD472A MT36LD872A 168-pin, 048-cycle 168-PIN DM-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 8,16, 32 MEG X 64 NONBUFFERED DRAM DIMMs MICRON I TECHNOLOGY, INC. MT8LD864A X MT16LD1664A X MT32LD3264A X DRAM MODULE FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • Eight CAS#, ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 64MB (8 Meg x 64), 128MB (16 Meg x 64),


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    MT8LD864A MT16LD1664A MT32LD3264A 168-Pin 168-pin, 128MB 256MB 096-cycle DE-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: M I I C R O N 1’ 2 ’ 4 M E G x 64 NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. DRAM MODULE MT4LD T 164A(X) MT8LD264A(X) MT16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JED EC pin-out in a 168-pin, dual in-line m em ory m odule (DIMM) • 8M B (1 M eg x 64), 16M B (2 M eg x 64),


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    MT8LD264A MT16LD464A 168-Pin 168-pin, 024-cycle PDF

    Untitled

    Abstract: No abstract text available
    Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18D9, MT58LC64K32D9, MT58LC64K36D9; MT58LC128K18G1, MT58LC64K32G1, MT58LC64K36G1 3.3V Vdd, 3.3V o r 2.5V I/O, P ipelined, S ingle-C ycle 2Mb SYNCBURST SRAM D eselect


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    MT58LC128K18D9, MT58LC64K32D9, MT58LC64K36D9; MT58LC128K18G1, MT58LC64K32G1, MT58LC64K36G1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON I 8 , 16 MEG X 64 SDRAM DIMMs TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT8LSDT864A MT16LSDT1664A FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PCIOO-compliant, includes concurrent Auto Precharge • JEDEC-standard 168-pin, dual in-line memory module


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    MT8LSDT864A MT16LSDT1664A 168-Pin 168-pin, MT8LSDT864A] 128MB MT16LSDT1664A] 128MB PDF

    MT9LD872G

    Abstract: No abstract text available
    Text: 8,16,32 MEG X 72 BUFFERED DRAM DIMMs MICRON I TECHNOLOGY, INC- MT9LD872 X, MT18LD T 1672 X, MT36LD(T)3272 X DRAM MODULE For the latest data sheet revisions, piease referto the Micron Web site: www.micron.com/mti/msp/htmt/ctatasheeLhtml FEATURES PIN ASSIGNMENT (Front View)


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    MT9LD872 MT18LD MT36LD 168-pin, 128MB 256MB 096-cycle 168-Pin MT9LD872G PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 8M E Gx72 MICRON • REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT9LSDT872 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module


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    MT9LSDT872 168-Pin 168-pin, MT9LSDT872) PDF

    3DQ24-VVDQ25

    Abstract: No abstract text available
    Text: 8’ 16 M E Gx72 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT9LSDT872A, MT18LSDT1672A SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


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    PC100-compliant 168-pin, 128MB 096-cycle 168-PIN 128MB) 3DQ24-VVDQ25 PDF

    transistor MWTA 06

    Abstract: 60/transistor MWTA 06
    Text: M M ic r o w a v e techno lo g y 2 WATT POWER OUTPUT AT 6 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 5 mm GATE WIDTH DIAMOND-UKE CARBON DLC PASSIVATION T - 1 4 12 GHz High Power GaAs FET M • • • • • w M M M « r iÉ n B H iin iÉ É n iD n n n în


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    MwT-14 bl541Q0 D000b35 transistor MWTA 06 60/transistor MWTA 06 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 32 MEG x 72 REGISTERED SDRAM DIMM MICRON I TECHNOLOGY, INC. MT18LSDT3272 SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View


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    168-pin, 256MB 096-cycle PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON' I T O tW O L ttffi INC. MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • •


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    MT58L512L18D, MT58L256L32D, MT58L256L36D PDF

    la7840

    Abstract: A1042-3 LA7840 IC IC LA7840 data TV horizontal Deflection Systems LG A10400 LA76070 staircase waveform A10409 LA7845N
    Text: Ordering number : ENN5844 Monolithic Linear IC LA76070 la A /lY o j ' NTSC Color Television IC Overview Package Dimensions The LA76070 is an NTSC color television IC. In addition to providing IIC bus control based rationalization of IC control and the adjustment manufacturing process


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    ENN5844 LA76070 LA7840/41 LA7845N/46N 3128-DIP52S LA76070] 56MHz la7840 A1042-3 LA7840 IC IC LA7840 data TV horizontal Deflection Systems LG A10400 staircase waveform A10409 LA7845N PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 DRAWING HADE IN THIRD ANGLE PR O JEC TIO N T H I S DRAWI NG IS U N PUBLISHED COPYRIGHT 19 LOC RELEA S ED FOR P U B L I C A T I O N SV AMP INCORPORATED. ALL D IS T R E V IS IO N S AF 50 INTERNATIO NAL RIG H TS RESERVED. ZONE 16.97 D LTR c D E S C R IP T IO N


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    000080J IL-T-10727 ampI7735 /vs/dept2122/dn 2I23/u H275J S/2A/91 15/JUL/96 15-JUL-gfi PDF

    C243

    Abstract: C203 ET-212 Z221
    Text: 2 DRAWING MADE IN THIRD ANGLE PR O JE C T IO N T H IS DRAWING d 15 UNPUBLISHED, R ELE A S ED FOR P U B L I C A T I O N BY A M P INCORPORATED. A L L INTERNATIO NAL COPYRIGHT 7 9 , AF 50 LOC 19 RIG H TS RESERVED. D IS T REVISIONS ZONE D E S C R I P T IO N


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    S/31/89 S/27/89 24-20H 30-JUL-93 rnL48 ojpJ7795_ et2122/duq2122/u. C243 C203 ET-212 Z221 PDF

    DS1260

    Abstract: No abstract text available
    Text: DS1260 DALLAS s e m ic o n d u c t o r S1260 SmartD Battery PIN ASSIGNM ENT FEATURES • Encapsulated lithium energy cell with shelf life be­ yond 10 years • Available with energy capacities of 25 0, 50 0, and □ □ □ □ □ □ □ 1,0 00 m AH @ 3 volts


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    DS1260 16-pin DS1260 PDF