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    H 649 A TRANSISTOR Search Results

    H 649 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H 649 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor bd650

    Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
    Text: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		PDF BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD644 BD646 BD648 transistor bd650 BD648 BD646 BD652 BD644 IC 651

    BD645

    Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
    Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		PDF BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646

    capacitor 106 35K

    Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21120/D MRF21120 MRF21120S MRF21120 capacitor 106 35K capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet

    capacitor 226 35K

    Abstract: 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21120/D MRF21120 MRF21120S capacitor 226 35K 226 35K capacitor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21120/D MRF21120 MRF21120S MRF21120

    226 35K capacitor

    Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21120/D MRF21120 MRF21120S MRF21120 226 35K capacitor 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor

    226 35k 051

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21120/D MRF21120 MRF21120S MRF21120/D 226 35k 051

    226 35K capacitor

    Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21120/D MRF21120 226 35K capacitor MRF21120 z40 mosfet 226 35K capacitor 226 35K

    z40 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21120/D MRF21120R6 MRF21120/D z40 mosfet

    capacitor 226 35K

    Abstract: R 226 35k 226 35K capacitor
    Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21120/D MRF21120 MRF21120/D capacitor 226 35K R 226 35k 226 35K capacitor

    h 669A

    Abstract: 669A 649a transistor 669A transistor 649A A649A CSD669A CSB649 CSB649A CSD669
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier


    Original     		PDF ISO/TS16949 CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669A 649a transistor 669A transistor 649A A649A CSD669A CSB649 CSB649A CSD669

    h 669A

    Abstract: 669A transistor 649A 649a transistor 669A CSB649 CSB649A CSD669 CSD669A h 649A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier


    Original     		PDF CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669A transistor 649A 649a transistor 669A CSB649 CSB649A CSD669 CSD669A h 649A

    h 669A

    Abstract: 669a
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier


    Original     		PDF CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669a

    h 669A

    Abstract: 669a transistor 649A transistor 669A 649a CSD669A CSB649 CSB649A CSD669 D 669A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSB649, CSB649A CSD669, CSD669A TO-126 SOT-32 Plastic Package CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier


    Original     		PDF ISO/TS16949 CSB649, CSB649A CSD669, CSD669A O-126 OT-32) C-120 h 669A 669a transistor 649A transistor 669A 649a CSD669A CSB649 CSB649A CSD669 D 669A

    A4514

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 MRF21120R6 A4514

    226 35K capacitor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 MRF21120R6 226 35K capacitor

    226 35K

    Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21120 MRF21120R6 226 35K 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF 0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    IC 651

    Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
    Text: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION


    OCR Scan     		PDF DD4314b BDS643/645/647/649/651 r-33-z OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 IC 651 BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651

    BD 649

    Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
    Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general


    OCR Scan     		PDF BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll

    669a

    Abstract: 649a transistor 669A transistor 649A CSD669A transistors D 669 CSB649 CSB649A CSD669 PC 649
    Text: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM "V rx i_ Iff E I— MAX. 7.4 7.8 B 10.5 10.8 C 2.4 2.7


    OCR Scan     		PDF CSB649, CSB649A CSD669, CSD669A 669a 649a transistor 669A transistor 649A CSD669A transistors D 669 CSB649 CSD669 PC 649

    h 669A

    Abstract: 669A 649a C649A h 649A
    Text: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7 .4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E


    OCR Scan     		PDF CSB649, CSB649A CSD669, CSD669A h 669A 669A 649a C649A h 649A