H128 TRANSISTOR Search Results

H128 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

H128 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
integrated circuit BOSCH Abstract: bosch pm6 Text: Stellaris LM4F232 Evaluation Board User ’s Manual EK-LM4F2 32-UM-02 Copyrig ht 201 2 Te xas In strumen ts Copyright Copyright © 2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments. ARM and	Original	PDF	LM4F232 32-UM-02 integrated circuit BOSCH bosch pm6
Untitled Abstract: No abstract text available Text: Tiva TM4C123G Development Board User's Guide Literature Number: SPMU357B August 2013 – Revised March 2014 Contents 1 DK-TM4C123G Overview 1.1 1.2 1.3 1.4 2 Hardware Description 2.1 2.2 2.3 2.4 2.5 3 . 4	Original	PDF	TM4C123G SPMU357B DK-TM4C123G DK-TM4C123G
transistors H128 Abstract: H136 rg29B H-136 Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER JO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs	OCR Scan	PDF	IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 1x105 H-137 IRHF7130, IRHF8130, transistors H128 H136 rg29B H-136
transistors H128 Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18 Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 JANSR2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs	OCR Scan	PDF	IRHF7130 IRHF8130 2N7261 JANSR2N7261 JANSHSN7S61 irhf8130 IRHF7130, IRHF8130, transistors H128 HG-18
transistors H128 Abstract: No abstract text available Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs	OCR Scan	PDF	IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 1x105 1x10s H-137 IRHF7130, IRHF8130, transistors H128
h128 transistor Abstract: transistors H128 NH FUSE LINDER BSC 25-05 quivalent book Text: RadHard Field Programmable Gate Arrays F e a ftw s re s Guaranteed Total Dose Radiation Capability Low Single Event Upset Susceptibility High D oseR ateS urvivability Latch-Up Im m unity Guaranteed QML Qualified Devices Commercial Devices A vailablefor Prototyping and	OCR Scan	PDF	20-Pin h128 transistor transistors H128 NH FUSE LINDER BSC 25-05 quivalent book