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    H22E Search Results

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    H22E Price and Stock

    Cree, Inc. JE2835AWT-R-H22EA0000-N0000001

    LED J WARM WHT 2200K 1411
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    DigiKey JE2835AWT-R-H22EA0000-N0000001 Digi-Reel 79,390 1
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    JE2835AWT-R-H22EA0000-N0000001 Cut Tape 79,390 1
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    JE2835AWT-R-H22EA0000-N0000001 Reel 76,000 4,000
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    Avnet Americas JE2835AWT-R-H22EA0000-N0000001 Reel 4 Weeks 100,000
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    Mouser Electronics JE2835AWT-R-H22EA0000-N0000001
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    Cree, Inc. JB2835AWT-W-H22EA0000-N0000001

    LED J WARM WHT 2200K 1411
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    DigiKey JB2835AWT-W-H22EA0000-N0000001 Cut Tape 53,144 1
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    JB2835AWT-W-H22EA0000-N0000001 Digi-Reel 53,144 1
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    JB2835AWT-W-H22EA0000-N0000001 Reel 52,000 4,000
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    Avnet Americas JB2835AWT-W-H22EA0000-N0000001 Reel 4 Weeks 100,000
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    Mouser Electronics JB2835AWT-W-H22EA0000-N0000001 22,555
    • 1 $0.11
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    Energizer Battery Company ENPMHH22E

    ENERGIZER METAL INSPECTION LIGHT
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    DigiKey ENPMHH22E 19 1
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    Zilog Inc IXD1415HH22ER-G

    200MA DUAL HIGH SPEED LDO
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    DigiKey IXD1415HH22ER-G Reel 21,000
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    Carling Technologies BA1-B0-24-630-H22-E

    CIRCUIT BREAKER
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    DigiKey BA1-B0-24-630-H22-E Bulk 3
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    Mouser Electronics BA1-B0-24-630-H22-E
    • 1 $51.24
    • 10 $45.15
    • 100 $36.6
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    Master Electronics BA1-B0-24-630-H22-E
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    Find more H22E price and stock on Findchips.com

    H22E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H22E4020IR

    Abstract: infrared led receiver infrared receiver led FDE4020IR infrared circuit infrared transistor 850 nm LED high power infrared led TR11
    Text: The Optoelectronic Manufacturing Corporation UK Ltd Candela House, Cardrew Industrial Estate, Redruth, Cornwall, TR11 5ER Tel: 01209 215424 Fax: 01209 215197 H22E4020IR Infrared 850nm Emitter Electrically isolated plastic cap package. High Radiant Output for Fibre Optic Applications.


    Original     		PDF H22E4020IR 850nm FDE4020IR 100mA 100mA, H22E4020IR infrared led receiver infrared receiver led infrared circuit infrared transistor 850 nm LED high power infrared led TR11

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    1LS transistor

    Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


    Original     		PDF Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 1LS transistor 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2

    BCW60

    Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
    Text: BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration


    Original     		PDF BCW60, BCX70 BCW61, BCX71 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW60 BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71

    BC846

    Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


    Original     		PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC846 BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860

    C1567

    Abstract: Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517
    Text: NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 PNP Type Marking Ordering Code


    Original     		PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 C1567 Q62702-C1567 Q62702-C1529 C1517 marking AGs sot-23 Q62702-C1476 Q62702-C1477 Q62702-C1481 Q62702-C1497 Q62702-C1517

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


    Original     		PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    3904

    Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
    Text: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8396 OT-89 3904 Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn

    2222a

    Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
    Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration


    Original     		PDF Q68000-A6481 Q68000-A6473 OT-23 2222a npn 2222 2222 NPN br 2222 npn 2222 A 2222

    Untitled

    Abstract: No abstract text available
    Text: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1


    Original     		PDF VPW09197 EHA07177 SC-74 EHP00365 EHP00364 EHP00368 EHP00369 Apr-22-1999

    CH3906TGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906TGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT-416


    Original     		PDF CH3906TGP SC-75/SOT-416 SC-75/SOT-416) 200mA) SC-75/SOT-412 1N916 CH3906TGP

    CH3906VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906VGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


    Original     		PDF CH3906VGP OT-563 OT-563) 200mA) OT-562 1N916 CH3906VGP

    CH3904VGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904VGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. SOT-563


    Original     		PDF CH3904VGP OT-563 OT-563) 200mA) 1N916 CH3904VGP

    H12E

    Abstract: BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e
    Text: BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 3 2 4 1 • Low collector-emitter saturation voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BCV61 EHA00012 OT143 BCV61B BCV61C H12E BCV61 transistor marking T2 BCV61A BCV61B BCV61C BFP181 h11e

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


    Original     		PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    bc 104 npn transistor

    Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    Original     		PDF 847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    BC847

    Abstract: BC857AT BC857BT BC857T SC75 VPS05996
    Text: BC857T PNP Silicon AF Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B


    Original     		PDF BC857T BC847. BC857AT BC857BT VPS05996 EHP00381 EHP00380 Nov-29-2001 EHP00382 BC847 BC857AT BC857BT BC857T SC75 VPS05996

    Katalog tesla tranzistor

    Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
    Text: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA


    OCR Scan     		PDF KFY18, KFY34, KFY46 KSY63 KSY82 Katalog tesla tranzistor KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


    OCR Scan     		PDF

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


    OCR Scan     		PDF BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59

    BCX70

    Abstract: hFE Group BCX70G BCX70H BCX70J BCX70K BCX71 ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70
    Text: k FERRANTI semiconductors BCX70 i N P N Silicon Planar Sm all Signal Transistor DESCRIPTION These devices are intended fo r use in low level am plifica­ tion, lo w level switching and lo w noise applications. Com plementary to th e BCX71 series. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF BCX70 BCX71 OT-23 BCX70 BCX70, BCX70G BCX70H BCX70J hFE Group BCX70K ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70

    BC107B

    Abstract: BC107 characteristic BC107B, MOTOROLA
    Text: MOTOROLA Order this document by BC107B/D SEMICONDUCTOR TECHNICAL DATA Transistors BC107B NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 45 Vdc Collecto r-B ase Voltage v CBO 50 Vdc Em itter-Base Voltage Rating


    OCR Scan     		PDF BC107B/D BC107B BC107B BC107 characteristic BC107B, MOTOROLA