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    H7P0601 Search Results

    H7P0601 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    H7P0601DSTL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 50Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H7P0601DL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 50Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
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    H7P0601 Price and Stock

    Renesas Electronics Corporation H7P0601DSTL-E

    Power MOSFET, P Channel, 60 V, 20 A, 50 Milliohms, TO-252 (DPAK), 4 Pins, Surface Mount (Alt: H7P0601DSTL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia H7P0601DSTL-E 18 Weeks 3,000
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    H7P0601 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H7P0601DL Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    H7P0601DS Renesas Technology Transistors> Switching/MOSFETs Original PDF

    H7P0601 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H7P0601DS

    Abstract: H7P0601DL
    Text: H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS on = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2


    Original     		H7P0601DL, H7P0601DS REJ03G0044-0100Z H7P0601DL H7P0601DS H7P0601DL PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    H7P0601DL

    Abstract: H7P0601DS h7p0601
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    H7P0601DL

    Abstract: H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601
    Text: H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B


    Original     		H7P1002DL, H7P1002DS REJ03G1601-0100 PRSS0004ZD-B PRSS0004ZD-C H7P0601DS H7P0601DL H7P0601DL H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601 PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    H7N1009MD

    Abstract: fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC
    Text: April 2010 Renesas Electronics Power Devices for Automotives Features Surface mounting and multi-tip built-in package Merits High efficiency and low loss, Best support for high-power control Miniaturization, Integration High avalanche destruction tolerance,


    Original     		injectio009MD H7N1006MD H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS O220FM HSOP20 H7N1009MD fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC PDF

    H7P0601DL

    Abstract: H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as PDF