H7P0601DS Search Results

H7P0601DS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H7P0601DSTL-E		Renesas Electronics Corporation	Pch Single Power Mosfet -60V -20A 50Mohm DPAK(S)/To-252

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Renesas Electronics Corporation H7P0601DSTL-E Power MOSFET, P Channel, 60 V, 20 A, 50 Milliohms, TO-252 (DPAK), 4 Pins, Surface Mount (Alt: H7P0601DSTL-E)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	H7P0601DSTL-E			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

H7P0601DS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H7P0601DS		Renesas Technology	Transistors> Switching/MOSFETs		Original	PDF

H7P0601DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
H7P0601DS Abstract: H7P0601DL Text: H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS on = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2	Original	H7P0601DL, H7P0601DS REJ03G0044-0100Z H7P0601DL H7P0601DS H7P0601DL	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
H7P0601DL Abstract: H7P0601DS h7p0601 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
H7P0601DL Abstract: H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601 Text: H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B	Original	H7P1002DL, H7P1002DS REJ03G1601-0100 PRSS0004ZD-B PRSS0004ZD-C H7P0601DS H7P0601DL H7P0601DL H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C h7p0601	PDF
H7N1009MD Abstract: fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC Text: April 2010 Renesas Electronics Power Devices for Automotives Features Surface mounting and multi-tip built-in package Merits High efficiency and low loss, Best support for high-power control Miniaturization, Integration High avalanche destruction tolerance,	Original	injectio009MD H7N1006MD H7N0607DS H7P0601DS 2SK3155 2SK3162 H7N1004DS O220FM HSOP20 H7N1009MD fuel injector mosfet RJM0305JSP HSOP20 solenoid injector injector D-PAK RJM0301JSP injector MOSFET RJM0603JSC	PDF
H7P0601DL Abstract: H7P0601DS H7P1002DL H7P1002DS PRSS0004ZD-B PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF