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    H9 TRANSISTOR MARKING Search Results

    H9 TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    H9 TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    transistor h9

    Abstract: H9 sot 23 H9 transistor marking LDTC124GLT1G H922
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an


    Original     		LDTC124GLT1G OT-23 transistor h9 H9 sot 23 H9 transistor marking LDTC124GLT1G H922 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    H9 transistor marking

    Abstract: LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		LDTC124GWT1G H9 transistor marking LDTC124GWT1G transistor h9 MARKING H9 h922 h9 MARKING PDF

    SC8810

    Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		SC-88, SC-74 lea50 SC-88 SC8810 transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk PDF

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor PDF

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    SOT363 marking code H9

    Abstract: H9 transistor marking transistor h9 H9 SOT363 PIMH9 PUMD9
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ‚ R2 = 47 kΩ Product specification Supersedes data of 2001 Nov 07 2003 Sep 15 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;


    Original     		SCA75 613514/03/pp9 SOT363 marking code H9 H9 transistor marking transistor h9 H9 SOT363 PIMH9 PUMD9 PDF

    CHEMH9GP

    Abstract: H9 transistor marking
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMH9GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.


    Original     		OT-563) OT-563 CHDTC114Y 100OC -40OC 50m100m CHEMH9GP H9 transistor marking PDF

    H9 transistor marking

    Abstract: transistor h9
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMH9PT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.


    Original     		OT-563) OT-563 CHDTC114Y 100OC -40OC 50m100m H9 transistor marking transistor h9 PDF

    SOT363 marking code H9

    Abstract: PIMH9 PUMD9
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Sep 15 2004 Apr 14 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors;


    Original     		SCA76 R75/04/pp9 SOT363 marking code H9 PIMH9 PUMD9 PDF

    PIMH9

    Abstract: PUMD9
    Text: DISCRETE SEMICONDUCTORS DAT PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 15 2004 Apr 14 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ


    Original     		R75/04/pp9 PIMH9 PUMD9 PDF

    SOT363 marking code H9

    Abstract: PIMH9 PUMD9
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 15 2004 Apr 14 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors;


    Original     		R75/04/pp9 SOT363 marking code H9 PIMH9 PUMD9 PDF

    MARKING H9

    Abstract: transistor h9 H9 transistor marking
    Text: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH9 (SC-107C) SMT6


    Original     		100mA SC-107C) OT-353 SC-88) DTC114Y R1120A MARKING H9 transistor h9 H9 transistor marking PDF

    Untitled

    Abstract: No abstract text available
    Text: EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures 1) Built-In Biasing Resistors.


    Original     		100mA 100mA DTC114Y R1120A PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    transistor h9

    Abstract: PIMH9
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ


    Original     		M3D302 SCA73 613514/01/pp8 transistor h9 PIMH9 PDF

    2d6 transistor

    Abstract: TRANSISTOR MARKING 1d8
    Text: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias


    Original     		SN74CBTU4411 11BIT SCDS192 000-V A114-B, 2d6 transistor TRANSISTOR MARKING 1d8 PDF

    RN2911FS

    Abstract: RN1910FS RN1911FS RN2910FS H9 transistor marking
    Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications C B 2 5 3 4 +0.02 0.48 -0.04 Equivalent Circuit and Bias Resistor Values


    Original     		RN2910FS RN2911FS RN2910FS, RN1910FS RN1911FS RN2911FS RN1911FS H9 transistor marking PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FS,RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 package. C B fS6 E Maximum Ratings (Ta = 25°C) (Q1, Q2 common)


    Original     		RN2910FS RN2911FS RN1910FS, RN1911FS PDF

    transistor equivalent table

    Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor


    Original     		CHEMG11PT CHDTC124E CHDTC144E CHDTC114Y CHDTC143Z CHDTC114E transistor equivalent table NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2 PDF

    TRANSISTOR MARKING 707

    Abstract: H9 transistor marking transistor h9
    Text: UMH9N IMH9A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH9N and IMH9A; H9 • • • UMH9N (UMT6) 2.0+0.2 1,3±0.1 ,i. 3 i j 2 :p i 1 I


    OCR Scan     		SC-74) DTC114YKA) SC-70) SC-59) TRANSISTOR MARKING 707 H9 transistor marking transistor h9 PDF

    H9 transistor marking

    Abstract: transistor h9
    Text: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V


    OCR Scan     		2SA1807F5 SC-63) A/-60 2SA1807F5 H9 transistor marking transistor h9 PDF