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    IS9-2100ARH-8 Renesas Electronics Corporation Radiation Hardened High Frequency Half Bridge Drivers Visit Renesas Electronics Corporation
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    JST Manufacturing B20B-XH-A(LF)(SN)

    CONN HEADER VERT 20POS 2.5MM
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    TDK-Lambda Corporation HAL-F12T

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    Amphenol Communications Solutions 78938-104HALF

    BERGSTIK II SR R/A-78938-104HALF
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    HALF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HALF12T TDK-Lambda Accessories, Power Supplies - Board Mount, HEATSINK PFE500F WIDTH 1.38" FIN Original PDF

    HALF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z


    Original
    PDF TPD7211F TPD7211F SON8-P-0303-0 7211F

    transistor equivalent book FOR D 1047

    Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor


    Original
    PDF M3D088 PBR951 PBR951 SCA60 125104/1200/05/pp16 771-PBR951-T/R transistor equivalent book FOR D 1047 MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16

    bc879

    Abstract: transistor BC879 BC879 darlington transistor bc875 NPN POWER DARLINGTON TRANSISTORS bc879 transistor 24825
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1999 May 28 2004 Nov 05 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES


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    PDF M3D186 BC875; BC879 BC878. BC879 MAM307 BC875 SCA76 transistor BC879 BC879 darlington transistor bc875 NPN POWER DARLINGTON TRANSISTORS bc879 transistor 24825

    Untitled

    Abstract: No abstract text available
    Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC


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    PDF Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: application INFO available UC1879 UC2879 UC3879 Phase Shift Resonant Controller FEATURES DESCRIPTION • Programmable Output Turn On Delay; Zero Delay Available The UC3879 controls a bridge power stage by phase shifting the switching of one half-bridge with respect to the other. This allows constant frequency


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    PDF UC1879 UC2879 UC3879 300kHz 100mA 10MHz UC3879

    Ignition Driver IC

    Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
    Text: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting


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    PDF PT5615 Ignition Driver IC programmable ignition control ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition

    3 phase ac sinewave phase inverter single ic

    Abstract: U5J diode
    Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One


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    PDF MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode

    MG50H2YS1

    Abstract: No abstract text available
    Text: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one


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    PDF MG50H2YS1 MG50H2YS1

    74LS299 APPLICATIONS

    Abstract: 74ls74 timing setup hold pin diagram and block diagram of 74ls74 ANSI32
    Text: TMS320SA32 32 KBIT/S ADPCM TRANSCODER NOVEMBER 1986 N PACKAGE ANSI 32 kbit/s ADPCM Compatible TOP VIEW CCITT G.721 32 kbit/s ADPCM Compatible Half-Duplex Transcoder Operation Transmit/Receive Selection Option /t-Law/A-Law PCM Selection Option NC£ 1^ 4 0 □


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    PDF TMS320SA32 165-mW 74LS299 APPLICATIONS 74ls74 timing setup hold pin diagram and block diagram of 74ls74 ANSI32

    mg75n2ys

    Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
    Text: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.


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    PDF MG75N2YS1 mg75n2ys LTA 703 S MG75N2YS1 MG75N2 MG75N2Y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One


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    PDF MG90V2YS40 2-94C1A

    Untitled

    Abstract: No abstract text available
    Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


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    PDF MG300J1US51 2-70v MG300J1US51

    ksy 11

    Abstract: No abstract text available
    Text: y UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION • Zero to 100% Duty Cycle Control • Programmable Output Turn-On Delay The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the switching of one half-bridge with respect


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    PDF UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 10MHz 150nA UC1875 UC1875. ksy 11

    microstep drive STEPPER MOTOR

    Abstract: 1045V "Stepper Drive" UC3770
    Text: Motor Controls Stopper Motors UC3717A Stepper Motor Drive Circuit • Improved version of industry standard • Full step, half-step and micro-step capability • Output currents up to 1.2A • Supply voltage 10-45V • Built-in fast recovery Schottky commutating diodes


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    PDF UC3717A 0-45V 16-pin UC3770 UC3717, 500mA microstep drive STEPPER MOTOR 1045V "Stepper Drive"

    Untitled

    Abstract: No abstract text available
    Text: SN74ACT7881 1024 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS227C - FEBRUARY 1993 - REVISED FEBRUARY 1996 • Member of the Texas Instruments Wldebus Family • Independent Asynchronous Inputs and Outputs • Input-Ready, Output-Ready, and Half-Full Flags


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    PDF SN74ACT7881 SCAS227C SN74ACT7882, SN74ACT7884, SN74ACT7811 50-pF 68-Pin 80-Pln DO-D17

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG90V2YS40 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG90V2YS40 HIGH P O W ER SW ITCHING APPLICATIONS U n it in mm M O TO R CONTROL APPLICATIONS 4-FAST-ON-TAB #110 The Electrodes; are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG90V2YS40 2-94C1A

    ic 393

    Abstract: No abstract text available
    Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG150J1JS50 50J1JS50 30//s 15/iS ic 393

    TPD7200F

    Abstract: No abstract text available
    Text: TO SHIBA TPD7200F TENTATIVE TOSHIBA INTELLIGENT POWER DEVICE TPD7200F SILICON MONOLITHIC POWER INTEGRATED CIRCUIT MOS GATE DRIVER FOR HALF BRIDGE CIRCUITS TPD7200F is a MOS gate driver for half bridge circuit, used the level shift system, manufactured by the high


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    PDF TPD7200F TPD7200F 20-pin SSOP20-P-225-1

    50J2Y

    Abstract: 50J2YS50
    Text: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG150J2YS50 50J2YS50 2-95A1A 50J2Y 50J2YS50

    SLRS007B

    Abstract: SGSL293
    Text: SN754410 QUADRUPLE HALF-H DRIVER I SLRS007B - NOVEMBER 1986 - REVISED NOVEMBER 1995 1-A Output-Current Capability Per Driver Applications Include Half-H and Full-H Solenoid Drivers and Motor Drivers Designed for Positive-Supply Applications Wide Supply-Vottage Range of 4.5 V to 36 V


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    PDF SN754410 SGSL293 SLRS007B

    MG150H2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0us Max. trr=0.5us (Max.) Low Saturation Voltage : VcE(Sat)=5.0V(Max,ï Enhancement-Mode Includes a Complete Half Bridge in One


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    PDF MG150H2YS1 MG150H2YS1

    LC-2-G

    Abstract: No abstract text available
    Text: TECHNICAL DATA MG120V2YS40 High Power Switching Applications. Motor Control Applications. # # # # # The Electrodes are Isolated from Case. High Input Im pedance Includes a Com plete Half Bridge in O ne Package. Enhancem ent-M ode High Speed: t, = 1.5 is (M ax. (I, = 120 A)


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    PDF MG120V2YS40 120Time LC-2-G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information 'Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor


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    PDF MCR12/D MCR12 T0-220AB

    MPS-082508-85

    Abstract: 082508-85
    Text: [MkzÏÏ MPS-082508-85/-86 800 to 2500 M H z High Linearity Amplifier F eature • +38 dBm Typical IP3 • +27 dBm Typical P1dB • 1 3 dB Typical Gain • 12 Volt Bias • Available in Surface M ount or Half Flange Package Description The MPS-082508-85 is broadband, self-biased GaAs FET amplifier. It is ideal for digital communications applica­


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    PDF MPS-082508-85/-86 MPS-082508-85 MPS-082508-86 MPS-082508-86EV 082508-85