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    HALL MAGNETIC BIPOLAR Search Results

    HALL MAGNETIC BIPOLAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    HALL MAGNETIC BIPOLAR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A 27631

    Abstract: 27631 hall magnetic bipolar LT HALL SENSOR UGN HALL UGN3132LL MH-014C
    Text: BIPOLAR HALL-EFFECT SWITCHES ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    HALL-EFFECT SWITCHES

    Abstract: UGN3132LL 0022b 0082C GH-022 GH-023
    Text: 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    UGN 3075

    Abstract: UGs 3075 UGx3132 UGN 3030 20EL
    Text: Data Sheet 27631.2B* 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 27631.2B* 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    UGN 3075

    Abstract: lt 719 UGs 3075 27631 hall 3133 hall current sensor 3A UGs 3030 UGN3132LT UGN3177
    Text: Data Sheet 27631.2B‡ 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		A3195x A3197x UGN 3075 lt 719 UGs 3075 27631 hall 3133 hall current sensor 3A UGs 3030 UGN3132LT UGN3177 PDF

    27631

    Abstract: UGN HALL "battery protection" hall magnetic bipolar HALL UGN LT HALL SENSOR signal hall sensor TO-243AA UGN3132LL hall 3133
    Text: 3132 AND 3133 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    27631

    Abstract: UGN 3235 3280E UGN 3122 UGN3132LT
    Text: Data Sheet 27631.2B 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    27631

    Abstract: A 27631 lt 719 UGN3132LT
    Text: Data Sheet 27631.2C 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		MH-026 27631 A 27631 lt 719 UGN3132LT PDF

    UGN3132LT

    Abstract: No abstract text available
    Text: Data Sheet 27631.2B 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    UGN 3235

    Abstract: 3280E UGN3132LT 27631
    Text: Data Sheet 27631.2B 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


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    UGN 3030

    Abstract: UGs 3030 UGN 3075 UGs 3075 lt 719 A 27631 UGN3132LT UGN3132
    Text: Data Sheet 27631.2B† 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		A3195x A3197x UGN 3030 UGs 3030 UGN 3075 UGs 3075 lt 719 A 27631 UGN3132LT UGN3132 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 27631.2B 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		PDF

    UGN 3075

    Abstract: UGs 3075 UGN 3030 UGx3132 UGs 3030 UGN3132LT UGx3133 UGN3132 allegro 3075
    Text: Data Sheet 27631.2B† 3132 AND 3133 ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES X These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: w en zr ISJ ÇD ro a ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over varying temperature and supply voltage. The high sensitivity permits


    OCR Scan     		PDF

    H0022B

    Abstract: No abstract text available
    Text: ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over varying tem perature and supply voltage. The high sensitivity permits


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HALL EFFECT SWITCHES These Hall effect switches are highly temperature-stable and stressresistant sensors best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		O-260AA) UGS3140HH UGS3130HH 05D433Ã GH-018 GH-013 GH-014 PDF

    3113U

    Abstract: No abstract text available
    Text: HALL EFFECT SWITCHES These Hall effect switches are highly temperature stable and stressresistant sensors best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		GH-018 GH-013 GH-014 00DS433 MH-008 MH-002-1 MH-011-1 3113U PDF

    27621A

    Abstract: UGN3113 UGN-3113 PH-003A TO243AA 211
    Text: HALL-EFFECT SWITCHES These Hall-effect switches are highly temperature stable and stressresistant devices best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		UGN3113UA MH-008A MH-002-1A MH-011-1A 27621A UGN3113 UGN-3113 PH-003A TO243AA 211 PDF

    SM 3119 N

    Abstract: No abstract text available
    Text: HALL EFFECT SWITCHES These Hall effect switches are highly temperature stable and stressresistant sensors best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		GH-018 GH-013 GH-014 MH-008 SM 3119 N PDF

    a1265

    Abstract: UGN3113 Allegro 3120 zt sot-89 UGN3113UA A ugs 3120
    Text: HALL-EFFECT SWITCHES These Hall-effect switches are highly temperature stable and stressresistant devices best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		PH-003A a1265 UGN3113 Allegro 3120 zt sot-89 UGN3113UA A ugs 3120 PDF

    UGS3140HH

    Abstract: hall effect sensor 559 UGS3119HHMIL UGS3130HH mh013 FH005 260-AA UGS-3140HH GH-013
    Text: HALL EFFECT SWITCHES These Hall effect switches are highly temperature-stable and stressresistant sensors best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		PH-003 MIL-STD-883C UGS3119HH UGS3120HH UGS3130HH UGS3140HH hall effect sensor 559 UGS3119HHMIL mh013 FH005 260-AA UGS-3140HH GH-013 PDF

    ME105

    Abstract: No abstract text available
    Text: HALL EFFECT IC SWITCH CRO ME105 HALL-EFFECT SWITCH This Hall-effect switch is stress-resistants sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. The device includes a voltage regulator, Hall voltage generator, signal amplifier, Schmitt trigger and open-collector


    OCR Scan     		ME105 Oct-98 ME105 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3130 HALL-EFFECT SWITCH This Hall-effect switch is a highly temperature stable and stressresistant sensor best utilized in applications that provide steep magnetic slopes and low residual levels of magnetic flux density. Each device includes a voltage regulator, quadratic Hall voltage


    OCR Scan     		UGS3030T/U UGN3130UA PDF