Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD443H HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage
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CYD443H
CYD443H
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3144 Hall Effect Switch ICs CYD3144E/L Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,
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CYD3144
CYD3144E/L
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD443H Unipolar HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage
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CYD443H
CYD443H
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3144E Hall Effect Switch ICs CYD3144E Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator,
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CYD3144E
CYD3144E
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,
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CYD3141E
CYD3141E
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,
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CYD3141E
CYD3141E
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E Hall-effect switch integrated circuits is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an
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CYD3141E
CYD3141E
D-85464
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CYD3144E
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3144E Hall Effect Switch ICs CYD3144E Hall-effect switch integrated circuit is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an open-collector output
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CYD3144E
CYD3144E
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3144E Hall Effect Switch IC CYD3144E Hall-effect switch integrated circuit is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an open-collector output
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CYD3144E
CYD3144E
D-85464
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43a Hall Effect Magnetic Sensors
Abstract: X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard
Text: HALL EFFECT SENSING AND APPLICATION MICRO SWITCH Sensing and Control 7DEOH RI &RQWHQWV Chapter 1 • Hall Effect Sensing Introduction . 1
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005715-2-EN
43a Hall Effect Magnetic Sensors
X98824-ss
IR sensor for line follower robot
crankshaft position sensor
Piezoelectric vortex flow meter
X98834-SS
SS19 hall
"Proximity Sensor" suitable for line follower
block diagram of dialysis machine
micro switch keyboard
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ED 89A diode
Abstract: No abstract text available
Text: HAL525 Hall Effect Sensor 1C in CMOS technology Specifications - switching type: latch Introduction The HAL525 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate with active offset compensation, a Schmitt trig
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HAL525
HAL525
ED 89A diode
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Untitled
Abstract: No abstract text available
Text: HAL300 Differential Hall Effect Sensor 1C in CMOS technology Introduction The HAL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active off set compensation, a differential amplifier with a Schmitt
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HAL300
HAL300
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Hall sensors code K2
Abstract: force sensor piezo Micronas HA 24 hall effect sensor
Text: HAL300 Differential Hall Effect Sensor 1C in CMOS technology Introduction The H AL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active off set compensation, a differential amplifier with a Schmitt
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HAL300
HAL300
Hall sensors code K2
force sensor piezo
Micronas HA 24
hall effect sensor
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HAL320
Abstract: 300C 300E HAL300 HAL300SO HAL300UA HAL300UA-E IEC68-2-20 hall switch ignition T04 transistor SOT
Text: MICRONAS Edition July 15, 1998 6251-345-1DS HAL300 Differential Hall Effect Sensor IC MICRONAS HAL300 Differential Hall Effect Sensor IC in CMOS technology Introduction The HAL 300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active offset compensation, a differential amplifier with a Schmitt
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6251-345-1DS
HAL300
HAL320
300C
300E
HAL300
HAL300SO
HAL300UA
HAL300UA-E
IEC68-2-20
hall switch ignition
T04 transistor SOT
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hall effect sensor 4 pin 452
Abstract: Hall Effect 3 pin ugn ABS Wheel Speed Sensor 3058 A3046EU A3056EU A3058EU A3058LU hall effect sensor ignition
Text: 3046, 3056, AND 3058 Data Sheet 27612A* 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED HALL EFFECT GEAR-TOOTH SENSORS–ZERO SPEED X 1 2 3 GROUND OUTPUT CC SUPPLY V X The A3046EU/LU, A3056EU/LU, and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in
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7612A*
A3046EU/LU,
A3056EU/LU,
A3058EU/LU
hall effect sensor 4 pin 452
Hall Effect 3 pin ugn
ABS Wheel Speed Sensor
3058
A3046EU
A3056EU
A3058EU
A3058LU
hall effect sensor ignition
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103SR5A-2
Abstract: TDK ultrasonic transducer 103SR5A-1 47XL31XC-03 413SR15 ultrasonic receiver 400SR 400Sr ultrasonic transducer 47XL31XC-02 micro switch V3 TESLA NU 73
Text: MICRO SWITCH Specifier's Guide for Solid State Sensors Hall Effect Position Sensors Magnetoresistive Position Sensors Current Sensors Catalog 20 Issue 11 • December 1991 MICRO SWITCH a Honeywell Division For unsurpassed reliability MICRO SWITCH Solid State Sensors
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103SR
103SR5A-1.
103SR11A-1
103SR12A-1
103SR13A-1
103SR15A-10.
103SR17A-1
103SR18-1.
103SR5A-2
TDK ultrasonic transducer
103SR5A-1
47XL31XC-03
413SR15
ultrasonic receiver 400SR
400Sr ultrasonic transducer
47XL31XC-02
micro switch V3
TESLA NU 73
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103SR5A-1
Abstract: 103SR5A-2 calculation of line diSTANCE relay REL 670 triac zo 109 ma 47XL31XC-03 ultrasonic receiver 400SR 417SR10 MICRO SWITCH FREEPORT ILLINOIS csla2ge micro switch V3 MICRO SWITCH FREEPORT HEAVY DUTY LIMIT SWITCH
Text: MICRO SWITCH Specifier's Guide for Solid State Sensors Hall Effect Position Sensors Magnetoresistive Position Sensors Current Sensors - Catalog 20 Issue 11 • December 1991 MICRO SWITCH a Honeywell Division >r unsurpassed reliability MICRO SWITCH Solid State Sensors
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103SR3F-5.
103SR5A-1.
103SR11A-1
103SR12A-1
103SR13A-1
103SR15A-10.
103SR17A-1
103SR18-1.
103SR5A-1
103SR5A-2
calculation of line diSTANCE relay REL 670
triac zo 109 ma
47XL31XC-03
ultrasonic receiver 400SR
417SR10
MICRO SWITCH FREEPORT ILLINOIS csla2ge
micro switch V3
MICRO SWITCH FREEPORT HEAVY DUTY LIMIT SWITCH
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Untitled
Abstract: No abstract text available
Text: 3056 3058 y\d HALL-EFFECT GEAR-TOOTH SENSORS-ZERO SPEED The A3056EU/LU and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets. These devices are ideal for
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A3056EU/LU
A3058EU/LU
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Untitled
Abstract: No abstract text available
Text: HAL320 Differential Hall Effect Sensor 1C in CMOS technology Introduction - reverse-voltage protection of VpD^pin -short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz The HAL320 is a differential Hall switch produced in
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HAL320
HAL320
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ED 89A diode
Abstract: Micronas HA 24 hall effect sensor SOT-89x ED 89A marking code
Text: HAL320 Differential Hall Effect Sensor 1C in CMOS technology Introduction - reverse-voltage protection of V DD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz The H AL320 is a differential Hall switch produced in
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HAL320
HAL320
OT-89x:
O-92UA:
ED 89A diode
Micronas HA 24
hall effect sensor
SOT-89x
ED 89A marking code
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ABS Wheel Speed Sensor
Abstract: allegro dual hall sensor ic 30 rpm geared DC motor datasheet A3046EU Gear Wheel Speed Sensor hall effect sensor 4 pin 72* hall IC 3 pole PH-012 10 rpm geared DC motor Hall Effect 3 pin ugn
Text: Data Sheet 27612A‡ 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED X The A3046EU/LU, A3056EU/LU, and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets.
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7612A
A3046EU/LU,
A3056EU/LU,
A3058EU/LU
ABS Wheel Speed Sensor
allegro dual hall sensor ic
30 rpm geared DC motor datasheet
A3046EU
Gear Wheel Speed Sensor
hall effect sensor 4 pin
72* hall IC 3 pole
PH-012
10 rpm geared DC motor
Hall Effect 3 pin ugn
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UGS3056U
Abstract: 3056U hall effect sensor 3pin ugs3056
Text: U G N 3056U U G S 3056U HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITH ZERO-RPM CAPABILITY Data Sheet 27612 Integrateci Circuits The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and
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UGN3056U
UGS3056U
3056U
hall effect sensor 3pin
ugs3056
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FH-010
Abstract: Hall sensor see a3046lu
Text: Data Sheet 27612A‡ 3046, 3056, AND 3058 HALL EFFECT GEAR-TOOTH SENSORS –ZERO SPEED X V The A3046EU/LU, A3056EU/LU, and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets.
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A3056EU/LU,
A3058EU/LU
FH-010
Hall sensor see
a3046lu
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HALL SENSOR COMPONENTS 5pin
Abstract: No abstract text available
Text: 3059 HALL EFFECT GEAR-TOOTH SENSORS —AC COUPLED The UGN3059KA and UGS3059KA ac-coupled Hall effect geartooth sensors are monolithic integrated circuits that switch in response to changing differential magnetic fields created by moving ferrous targets. These devices are ideal for use in non-zero-speed,
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UGN3059KA
UGS3059KA
HALL SENSOR COMPONENTS 5pin
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