G8931-20
Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E03
low dark current APD
G893
hamamatsu low dark current APD
KAPDB0120EA
hamamatsu ingaas APD
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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InGaAs apd photodiode
Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).
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G8931-04
G8931-04
SE-171
KAPD1018E03
InGaAs apd photodiode
Ge APD
KAPDC0005EC
1NA100
low dark current APD
hamamatsu ingaas APD
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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G8931-20
Abstract: LH0032 SE-171 low dark current APD APD OTDR
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E02
LH0032
low dark current APD
APD OTDR
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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Original
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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PDF
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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G8931-04
Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E02
LH0032
OPTICAL NETWORK TERMINAL
InGaAs apd photodiode
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Untitled
Abstract: No abstract text available
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
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Untitled
Abstract: No abstract text available
Text: APD Si APD S8664-55 Large area, low noise APD with enhanced short-wavelength sensitivity S8664-55 is an APD avalanche photodiode designed for short wavelength detection, featuring a large active area yet low noise and low terminal capacitance. S8664-55 also offers a high quantum efficiency at λ=400 nm and uniform gain over the entire active area, making it suitable for
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S8664-55
S8664-55
SE-171
KAPD1008E01
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1NA101
Abstract: S8890 APD S11519
Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.
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S11519
S8890
SE-171
KAPD1028E01
1NA101
APD S11519
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G8931-03
Abstract: SE-171
Text: PHOTODIODE InGaAs APD G8931-03 High-speed response: 2.5 Gbps, active area: φ0.03 mm Features Applications l 2.5 Gbps operation l Low capacitance l Optical fiber communications • General rating Parameter Active area Symbol - Value φ0.03 Unit mm Symbol IF
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G8931-03
SE-171
KAPD1011E01
G8931-03
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E02
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G10519-14
Abstract: SE-171 STM-16 photodiode 1 Gbps 1.55
Text: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB
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G10519-14
STM-16
SE-171
KAPD1021E02
G10519-14
photodiode 1 Gbps 1.55
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S6045
Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Text: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission
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S6045
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
SE-171
KAPD1005E03
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
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Avalanche photodiode APD
Abstract: G8931-03 SE-171 hamamatsu low dark current APD avalanche photodiode ingaas ghz hamamatsu avalanche photodiode ingaas ghz
Text: PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm l Optical fiber communications l SDH/SONET l Metro area network • General rating Parameter Active area
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G8931-03
SE-171
KAPD1011E03
Avalanche photodiode APD
G8931-03
hamamatsu low dark current APD
avalanche photodiode ingaas ghz
hamamatsu avalanche photodiode ingaas ghz
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E03
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are
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G9910-14
SE-171
KAPD1016E01
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photodiode 1.0 Gbps 1.55
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/1.55 µm, 10.7 Gbps Features Applications l Compatible with XMD 10 Gbps Miniature Device -MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=3.3 V, VBR=30 V l Differential output
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G10204-54
SE-171
KAPD1017E01
photodiode 1.0 Gbps 1.55
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission
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S6045
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
SE-171
KAPD1005E04
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PDF
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S6045
Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Text: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission
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S6045
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
SE-171
KAPD1005E04
S6045-01
S6045-02
S6045-03
S6045-04
S6045-05
S6045-06
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings
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S8664
S8664-02K
S8664-05K
S8664-10K
S8664-20K
S8664-30K
S8664-50K
S8664-55
SE-171
KAPD1012E02
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R6094 pmt divider circuit
Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
Text: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput
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31-Nov
R6094 pmt divider circuit
Hamamatsu r6094
C9321CA-02
R4110U-74
AUTOMATIC STREET LIGHT CONTROLLER using IR sensor
InGaas PIN photodiode chip back illuminated
apd raman
wafer 60g
H9656
sensor x-ray
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1NA103
Abstract: No abstract text available
Text: PHOTODIODE Si APD S5343, S5344, S5345 Short wavelength type APD Features Applications l High sensitivity and low noise in UV to visible range l Low-light-level measurement l Analytical equipment • General ratings / Absolute maximum ratings Type No. S5343
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S5343,
S5344,
S5345
S5343
S5344
S5345
SE-171
KAPD1001E03
1NA103
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